scholarly journals Novel stretchable thermochromic transparent heaters designed for smart window defroster applications by spray coating silver nanowire

RSC Advances ◽  
2019 ◽  
Vol 9 (61) ◽  
pp. 35786-35796 ◽  
Author(s):  
Loganathan Veeramuthu ◽  
Bo-Yu Chen ◽  
Ching-Yi Tsai ◽  
Fang-Cheng Liang ◽  
Manikandan Venkatesan ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Tensile Strain ◽  
Spray Coating ◽  
Silver Nanowire ◽  
Good Stability ◽  
Smart Window ◽  
High Transparency ◽  
Lower Sheet ◽  
Lower Sheet Resistance

The as-designed heaters proved to be excellent candidates for employment in window defrosters, as they satisfy the essential prerequisites such as lower sheet resistance, high transparency, mechanical robustness and good stability to tensile strain.

scholarly journals Size Effects in Ruthenium-Based Thick-Film Resistors: Rutile vs. Pyrochlore-Based Resistors

1991 ◽  
Vol 14 (3) ◽  
pp. 163-173 ◽  
Author(s):  
M. Prudenziati ◽  
F. Sirotti ◽  
M. Sacchi ◽  
B. Morten ◽  
A. Tombesi ◽  
...  
Keyword(s):  
Size Effect ◽  
Thick Film ◽  
Sheet Resistance ◽  
Firing Temperature ◽  
Size Effects ◽  
Conductive Phase ◽  
Lower Sheet ◽  
Lower Sheet Resistance

The size effect, namely the change of sheet resistance, Rsas a function of resistor length, has been investigated in layers whose conductive phase evolves from Pb-rich (Ru-deficient pyrochlores) to Pb2Ru2O6.5and finally to RuO2by increasing the firing temperature. It is found that Bi diffusion from the terminations is responsible for lower sheet resistance values in shorter resistors whatever the conductive phase is. On the contrary, Ag diffusion is responsible for lower sheet resistance values in shorter resistors only in the case of ruthenate conductive grains while the reverse is observed in RuO2-based layers. Size effect can be suppressed with Pt/Au-based terminations provided that no Bi is contained and with Au-metallorganic-based contact provided that the peak firing temperature is not too high.

scholarly journals Directed self-assembly of rhombic carbon nanotube nanomesh films for transparent and stretchable electrodes

2015 ◽  
Vol 3 (10) ◽  
pp. 2319-2325 ◽  
Author(s):  
Sehee Ahn ◽  
Ayoung Choe ◽  
Jonghwa Park ◽  
Heesuk Kim ◽  
Jeong Gon Son ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Sheet Resistance ◽  
Self Assembly ◽  
Lower Sheet ◽  
Mechanical Durability ◽  
Lower Sheet Resistance ◽  
Nanotube Films

Directed self-assembly of carbon nanotubes into 2D rhombic nanomesh films results in greatly lower sheet resistance, higher stretchability, and better mechanical durability than those of random carbon nanotube films.

Comparative Studies of Transparent Conductive Electrodes Based on Silver Nanowires and Carbon Nanotubes

2015 ◽  
Vol 778 ◽  
pp. 75-78
Author(s):  
Hai Yan Hao ◽  
Lei Dai ◽  
Zhe Li ◽  
Kam Hung Low
Keyword(s):  
Carbon Nanotubes ◽  
Contact Resistance ◽  
Sheet Resistance ◽  
Comparative Studies ◽  
Mechanical Stability ◽  
Silver Nanowires ◽  
Lower Sheet ◽  
Transparent Conductive Electrodes ◽  
Lower Sheet Resistance

The effects of reducing the contact resistance of AgNW networks by using TiO2and PEDOT:PSS were compared. The AgNW+PEDOT:PSS TCE was able to give a lower sheet resistance of 30~60Ω/□, while the AgNW+TiO2gave a relatively higher, but still practical value of 85~125Ω/□. Then the AgNW+PEDOT:PSS TCE was further compared with the SWCNT+PEDOT:PSS TCE, and it was found the SWCNT+PEDOT:PSS TCE had a lower conductivity of 70~110Ω/□ but a superior long-term mechanical stability.

Fabrication of high-performance flexible transparent conductive silver nanowire films using spray coating

2021 ◽  
Vol 35 (06) ◽  
pp. 2150086
Author(s):  
Y. H. Wang ◽  
X. L. Wu ◽  
X. Yang ◽  
H. Xie
Keyword(s):  
Sheet Resistance ◽  
High Performance ◽  
Silver Nanowires ◽  
Spray Coating ◽  
Silver Nanowire ◽  
Pressure Treatment ◽  
Experimental Conditions ◽  
Process Effects ◽  
Coating Method ◽  
Mechanical Bending

Flexible silver nanowires (AgNWs) transparent conductive films (TCFs) were fabricated on poly(ethylene terephthalate) (PET) substrate by using spray coating process. Effects of concentration and amount of AgNWs suspension on the performances of optoelectronics and microstructures of AgNWs TCFs were investigated. The experimental results demonstrate that as the increase of both of concentration and amount of AgNWs suspension, the sheet resistance and nonuniformity factor of the sheet resistance (NUF) and transmittance of AgNWs TCFs decrease and the root mean square (RMS) roughness and figure of merit (FoM) and haze of the AgNWs TCFs increase, respectively, due to the increase of the deposition density of AgNWs on the substrate. The flexible AgNWs TCFs with excellent comprehensive performance, which is a NUF of 0.48, haze of 1.94%, FoM of 148.5, transmittance of 84.5%, and sheet resistance of [Formula: see text], can be obtained under the proper experimental conditions. The pressure treatment can improve the electrical conductivity of AgNWs TCFs due to the increase of contact area and the decrease of contact resistance. AgNWs TCF with pressure treatment also exhibits excellent reliability against mechanical bending over 1000 cycles. Our works demonstrate that flexible AgNWs TCFs with high performance can be obtained by using spray coating method, which is one of the common techniques for preparing coatings or films.

Application of RTA To Bipolar Ic'S

1987 ◽  
Vol 92 ◽  
Author(s):  
Robert H. Reuss ◽  
Thomas P. Bushey
Keyword(s):  
Sheet Resistance ◽  
Design Rule ◽  
Actual Process ◽  
Gate Delay ◽  
Poly Silicon ◽  
Lower Sheet ◽  
Lower Sheet Resistance

ABSTRACTRTA has been investigated for a variety of applications including implant anneal and modification of poly silicon. However, little has been reported on the integration of RTA into actual process flows. We describe here results for bipolar IC's with RTA for the fabrication of shallower junctions and lower sheet resistance (Rs) poly electrodes. For a successful bipolar IC, not only are good diode characteristics and related transistor parameters important, but also, resistor behavior, uniformity, and yield are critical. An AG Heatpulse system was used to successfully anneal the emitter implant of 2.0 um design rule bipolar IC's. The yield and variation in gate delay were comparable to furnace annealed counterparts. These results are especially encouraging since both transistor performance and resistor matching are critical for the circuits tested. However, significant improvement in gate delay was not observed.

Effect of Ge Pre-amorphization on Junction Characteristics for Low Energy B Implants

2000 ◽  
Vol 610 ◽  
Author(s):  
Jinning Liu ◽  
Sandeep Mehta
Keyword(s):  
Sheet Resistance ◽  
Low Energy ◽  
Junction Depth ◽  
Semiconductor Processing ◽  
Rapid Thermal Anneal ◽  
Lower Sheet ◽  
N Source ◽  
Energy Regime ◽  
Spike Anneal ◽  
Lower Sheet Resistance

AbstractThe drive towards developing deep sub-micron CMOS devices places more challenges on semiconductor processing. From the standpoint of doping technology, the challenge is to achieve ultra-shallow p+/n source/drain extension junctions for PMOS. Among the various approaches being pursued to meet this challenge, pre-amorphization was used to curtail channeling of the as-implanted Boron. The effect of pre-amorphization on junction depth and junction sheet resistance in the ultra-low implant energy regime is investigated in this study. Pre-amorphization was achieved with Ge implant. B was implanted at energies of 250eV to 5keV and at a dose of 1×1015cm−2 into crystalline and pre-amorphized wafers. Both spike anneal at 1050°C and furnace anneal at 500°C to 750°C were performed after B implants. In all spike anneal cases, the pre-amorphized wafers exhibit higher sheet resistance and shallower junction depth than crystalline wafers. In all furnace anneal cases, shallower junction depth as well as lower sheet resistance can be achieved with pre-amorphized wafers. Higher pre-amorphization energy induces lower sheet resistance after both furnace and rapid thermal anneal (RTA).

scholarly journals Quantitative Investigation of the Morphologically Corrugated CVD-grown Graphene Monolayer Surface with a Nanoparticle-on-Mirror system

2022 ◽  
Author(s):  
Won-Hwa Park
Keyword(s):  
Sheet Resistance ◽  
Carrier Mobility ◽  
Chemical Vapor ◽  
High Specific Surface Area ◽  
Au Nanoparticle ◽  
Graphene Monolayer ◽  
Lower Sheet ◽  
The Status ◽  
Grown Graphene ◽  
Lower Sheet Resistance

Abstract Graphene can be used as a starting material for the synthesis of useful nano-complexes for flexible, transparent electrodes, therapeutic, bio-diagnostics and bio-sensing. In order to apply graphene in the medical field, chemical vapor deposition (CVD) method has been mainly utilized considering its large and near-homogenious carbon constituents. Especially, the less degree of perturbation of graphene monolayer (GM), which is followed by the underneath catalytic Cu surface morphology, is very crucial in terms of providing the suspended GM and relatively fluent lateral carrier mobility with lower sheet resistance value. In this work, we can suggest a surface-Enhanced Raman Spectroscopic (SERS) indicator in a quantitative way on the status of z-directional morphological corrugation of a CVD–grown GM (CVD-GM) by applying a Nanoparticle-on-Mirror (NPoM) system composed of Au nanoparticle (NP) / CVD-GM / Au thin film (TF) plasmonic junction structure. A new (or enhanced) Radial Breathing Like Mode (RBLM) SERS signal around ~150 cm-1 from CVD-GM spaced in NPoM is clearly observed by employing a local z-polarized incident field formed at the Au NP–Au TF plasmonic gap junctions. With this observation, the value of I[out-of-plane, RBLM] / I[in-plane, [2D] at certain domains, it can be suggested as a new optical nano-metrology value to relatively determine between lower z-directional morphological corrugation (or protrusion) status of a CVD-GM spaced in our NPoM system (lower I[RBLM] / I[2D] value) and higher degree of lateral carrier mobility of the CVD-GM associated with lower sheet resistance values as a result of higher blue-shifted Raman in-plane (G, 2D) peak maximum position. Furthermore, we will also expect the bio-sensing performances by utilizing the high specific surface area and ultrahigh flexibility of the CVD-GM in one of the future prospective works such as pressure-strain, strain-to-electricity and chemical-coupled sensor via I[RBLM] / I[2D] values.

scholarly journals Efficiency Improvement by Deeper Emitter with Lower Sheet Resistance for Uniform Emitters

2011 ◽  
Vol 8 ◽  
pp. 515-520 ◽  
Author(s):  
Y. Komatsu ◽  
M. Koorn ◽  
A.H.G. Vlooswijk ◽  
P.R. Venema ◽  
A.F. Stassen
Keyword(s):  
Sheet Resistance ◽  
Efficiency Improvement ◽  
Lower Sheet ◽  
Lower Sheet Resistance

scholarly journals Effects of Concentration and Spin Speed on the Optical and Electrical Properties of Silver Nanowire Transparent Electrodes

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2219
Author(s):  
Xiaopeng Li ◽  
Jiayue Zhou ◽  
Dejun Yan ◽  
Yong Peng ◽  
Yong Wang ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Spin Coating ◽  
Figure Of Merit ◽  
Silver Nanowires ◽  
Solution Concentration ◽  
Ethanol Solution ◽  
Silver Nanowire ◽  
Optical And Electrical Properties ◽  
Transparent Electrodes ◽  
Spin Speed

In this paper, silver nanowires (AgNWs) with a diameter of 40 nm and a length of 45 μm were dispersed into an ethanol solution to prepare AgNW solutions with concentrations of 1, 2, and 3 mg/mL, respectively. The AgNW solutions were then deposited on a glass substrate using spin-coating at 1000, 2000, and 3000 rpm for 45 s, respectively, to prepare transparent electrodes. The results showed that the distribution of AgNWs on the substrate increased in density with the increase in the AgNW solution concentration and the decrease in spin speed. The effect of concentration on the distribution of AgNWs was greater than that of the spin speed. The transmittance of each electrode was between 84.19% and 88.12% at 550 nm, the average sheet resistance was between 20.09 and 358.11 Ω/sq, the highest figure of merit (FoM) was 104.42, and the lowest haze value was 1.48%. The electrode prepared at 1000 rpm with a concentration of 2 mg/mL and that prepared at 3000 rpm with a concentration of 3 mg/mL were very similar in terms of the average sheet resistance, transmittance at 550 nm, FoM, and haze value; thus, these two electrodes could be considered equivalent. The haze value of the electrode was positively correlated with the spin speed at low concentration, but that relationship became inverse as the concentration rose. For the AgNWs used in this experiment with an aspect ratio of 1125, the concentration of the AgNW solution should reach at least 2 mg/mL to ensure that the FoM of the electrode is greater than 35.

scholarly journals Highly stabilized flexible transparent capacitive photodetector based on silver nanowire/graphene hybrid electrodes

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yooji Hwang ◽  
Young Hyun Hwang ◽  
Kwang Wook Choi ◽  
Seungwon Lee ◽  
Soojin Kim ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Dielectric Layer ◽  
Measurement Techniques ◽  
Current Measurement ◽  
Silver Nanowire ◽  
Semiconductor Materials ◽  
Graphene Electrode ◽  
Mechanical Durability ◽  
New Type ◽  
Ag Nanowire

AbstractThe need for photodetectors in various fields has gradually emerged, and several studies in this area are therefore being conducted. For photodetectors to be used in various environments, their transparency, flexibility, and durability must be ensured. However, the development of flexible photodetectors based on the current measurement techniques of conventional photodetectors has been difficult owing to the limitations of semiconductor materials. In this study, a new type of flexible and transparent capacitive photodetector was fabricated to address the shortcomings of conventional photodetectors. In addition, by introducing graphene electrodes to a new type of manufactured photodetector, devices with excellent overall chemical, thermal, and mechanical durability have been developed. Compared to photodetectors based on pristine Ag nanowire (AgNW) electrodes, AgNW/graphene hybrid electrode-based photodetectors exhibit a 20% higher photosensitivity. Also, the hybrid AgNW/graphene electrode on the dielectric layer exhibited low sheet resistance (~ 8 Ω/sq) and relatively high transmittance (~ 45%).

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