scholarly journals Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors

RSC Advances ◽  
2019 ◽  
Vol 9 (44) ◽  
pp. 25439-25461 ◽  
Author(s):  
Bhaskar Kaviraj ◽  
Dhirendra Sahoo
Keyword(s):  
Transition Metal ◽  
Band Gaps ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Group Vi ◽  
Strong Light ◽  
Matter Coupling ◽  
Infrared Spectral ◽  
Direct Band

Two-dimensional (2D) group-VI transition metal dichalcogenide (TMD) semiconductors, such as MoS2, MoSe2, WS2 and others manifest strong light matter coupling and exhibit direct band gaps which lie in the visible and infrared spectral regimes.

Structural, Electronic and Optical Properties of Transition Metal Dichalcogenides Layer PtS2 (Se2) for Nano Devices Applications

2021 ◽  
Vol 886 ◽  
pp. 48-56
Author(s):  
Rusul A. Ghazi ◽  
Dhay Ali Sabur ◽  
Ruaa S. Al-Hasnawy ◽  
Haider O. Muhsen ◽  
Bahjat B. Kadhim ◽  
...  
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Band Gaps ◽  
Two Dimensional ◽  
Electronic And Optical Properties ◽  
New Class ◽  
Metal Dichalcogenides ◽  
Direct Band ◽  
Indirect Band Gap

Monolayer materials are promising material in applications, such as possess some layers with sturdy in-plane bonds. These materials represents two-dimensional (2D) materials which are possess a vertical weak Van der Waals (VdW) interactions sandwiched among the neighboring sheets. These structures of layers offer the chance to be split to free atomic layers. So new class material with two dimensional transition metal dichalcogenides which includes PtS2 (Se2) have unique geometric structural, electronic and optical properties are studied. It has attracted the attention of many researchers for its extensive applications in (catalysis, sensing, electronics, and optoelectronics devices). It has been disclosed from the outcomes that these monolayers are dynamically stable according to the phonon calculations. Also, the direct band gaps located at K point for MoS2 and MoSe2 are 1.67 eV and 1.484 eV and for PtS2 and PtSe2 located between Γ-M points are 1.887 and 1.66, respectively. Also, the PtS2 have indirect band gap of about 1.775 eV situated at KΓ- ΓM and for PtSe2 is 1.401 eV at Γ- ΓM path. The results show that the maximum absorption coefficients are between 14×104 and 16.4×104 cm-1 for PtS2 and MoSe2, respectively. Besides, the maximum conductivities are between 2.09×101 and 3.65×1015 1/s for PtSe2 and MoS2, and the major values Likewise, the optical properties determined over rang energy 0.30 eV. The work function is equal 6.197eV for PtS2 and 5.628eV for PtSe2. It has been shown by studying photon dispersion of both monolayers that it is stable because it does not contain imaginary frequencies.

scholarly journals Visualization of Multifractal Superconductivity in a Two-Dimensional Transition Metal Dichalcogenide in the Weak-Disorder Regime

Nano Letters ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 5111-5118 ◽  
Author(s):  
Carmen Rubio-Verdú ◽  
Antonio M. Garcı́a-Garcı́a ◽  
Hyejin Ryu ◽  
Deung-Jang Choi ◽  
Javier Zaldı́var ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Weak Disorder

scholarly journals Retraction: Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors

RSC Advances ◽  
2021 ◽  
Vol 11 (21) ◽  
pp. 12866-12866
Author(s):  
Bhaskar Kaviraj ◽  
Dhirendra Sahoo
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional

Retraction of ‘Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors’ by Bhaskar Kaviraj and Dhirendra Sahoo, RSC Adv., 2019, 9, 25439–25461, DOI: 10.1039/c9ra03769a.

scholarly journals Fast response photogating in monolayer MoS2 phototransistors

Nanoscale ◽  
2021 ◽  
Author(s):  
Daniel Vaquero ◽  
Vito Clericò ◽  
Juan Salvador-Sanchez ◽  
Elena Díaz ◽  
Francisco Dominguez-Adame ◽  
...  
Keyword(s):  
Transition Metal ◽  
Fast Response ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Intensive Research

Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by...

A comprehensive study on carrier mobility and artificial photosynthetic properties in group VI B transition metal dichalcogenide monolayers

2018 ◽  
Vol 6 (18) ◽  
pp. 8693-8704 ◽  
Author(s):  
Ashima Rawat ◽  
Nityasagar Jena ◽  
Dimple Dimple ◽  
Abir De Sarkar
Keyword(s):  
Transition Metal ◽  
Carrier Mobility ◽  
Artificial Photosynthesis ◽  
Transition Metal Dichalcogenide ◽  
Group Vi ◽  
Artificial Photosynthetic ◽  
Photosynthetic Properties ◽  
Comprehensive Study

Artificial photosynthesis in group VI B transition metal dichalcogenide monolayers.

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