scholarly journals Direct chemical vapor deposition synthesis of large area single-layer brominated graphene

RSC Advances ◽  
2019 ◽  
Vol 9 (24) ◽  
pp. 13527-13532
Author(s):  
Maria Hasan ◽  
Wang Meiou ◽  
Liu Yulian ◽  
Sami Ullah ◽  
Huy Q. Ta ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Direct Synthesis ◽  
Single Layer ◽  
Chemical Vapor ◽  
Large Area

In this study we present the first direct synthesis of large area, single layer, crystalline graphene with covalently doped bromine.

scholarly journals Correction: Direct chemical vapor deposition synthesis of large area single-layer brominated graphene

RSC Advances ◽  
2019 ◽  
Vol 9 (28) ◽  
pp. 16057-16057
Author(s):  
Maria Hasan ◽  
Wang Meiou ◽  
Liu Yulian ◽  
Sami Ullah ◽  
Huy Q. Ta ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Layer ◽  
Chemical Vapor ◽  
Large Area

Correction for ‘Direct chemical vapor deposition synthesis of large area single-layer brominated graphene’ by Maria Hasan et al., RSC Adv., 2019, 9, 13527–13532.

Photoelectron Spectroscopic Imaging and Device Applications of Large-Area Patternable Single-Layer MoS2Synthesized by Chemical Vapor Deposition

ACS Nano ◽  
2014 ◽  
Vol 8 (5) ◽  
pp. 4961-4968 ◽  
Author(s):  
Woanseo Park ◽  
Jaeyoon Baik ◽  
Tae-Young Kim ◽  
Kyungjune Cho ◽  
Woong-Ki Hong ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Layer ◽  
Chemical Vapor ◽  
Spectroscopic Imaging ◽  
Large Area ◽  
Device Applications

Direct synthesis of phosphorus and nitrogen co-doped monolayer graphene with air-stable n-type characteristics

2014 ◽  
Vol 16 (38) ◽  
pp. 20392-20397 ◽  
Author(s):  
Yunzhou Xue ◽  
Bin Wu ◽  
Hongtao Liu ◽  
Jiahui Tan ◽  
Wenping Hu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Direct Synthesis ◽  
Chemical Vapor ◽  
Nitrogen Sources ◽  
Monolayer Graphene ◽  
Large Area ◽  
Co Doped

Large-area substitutional phosphorus–nitrogen co-doped monolayer graphene is directly synthesized on a Cu surface by chemical vapor deposition using molecules of phosphonitrilic chloride trimer as the phosphorus and nitrogen sources.

Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition

2015 ◽  
Vol 106 (9) ◽  
pp. 093112 ◽  
Author(s):  
Katsuhisa Murakami ◽  
Shunsuke Tanaka ◽  
Ayaka Hirukawa ◽  
Takaki Hiyama ◽  
Tomoya Kuwajima ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Direct Synthesis ◽  
Chemical Vapor ◽  
Large Area

scholarly journals SYNTHETIC GRAPHENE GROWN BY CHEMICAL VAPOR DEPOSITION ON COPPER FOILS

2013 ◽  
Vol 27 (10) ◽  
pp. 1341002 ◽  
Author(s):  
TING FUNG CHUNG ◽  
TIAN SHEN ◽  
HELIN CAO ◽  
LUIS A. JAUREGUI ◽  
WEI WU ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Rapid Development ◽  
Graphene Film ◽  
Single Layer ◽  
Chemical Vapor ◽  
Mechanical And Thermal Properties ◽  
Large Area ◽  
Exfoliated Graphene

The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interest. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapor deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this paper, we review the synthesis and characterizations of graphene grown on copper foil substrates by atmospheric pressure chemical vapor deposition. We also discuss potential applications of such large-scale synthetic graphene.

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

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