Enhanced thermoelectric properties of Sb2Te3/CH3NH3I hybrid thin films by post-annealing

2020 ◽  
Vol 7 (1) ◽  
pp. 198-203
Author(s):  
Shuo Chen ◽  
Fu Li ◽  
Yuexing Chen ◽  
Jingting Luo ◽  
Guangxing Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Evaporation Method ◽  
Post Annealing ◽  
Hybrid Thin Films

An effective post-annealing involved sequential sputtering/evaporation method is used to prepare inorganic–organic Sb2Te3/CH3NH3I hybrid thin films with improved thermoelectric properties.

Thermoelectric properties of PbTe thin films prepared by gas evaporation method

1999 ◽  
Vol 14 (1) ◽  
pp. 209-212 ◽  
Author(s):  
Masatoshi Ito ◽  
Won-Son Seo ◽  
Kunihito Koumoto
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Grain Size ◽  
Seebeck Coefficient ◽  
Grain Boundaries ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Carrier Mobility ◽  
Evaporation Method

PbTe thin films with fine grains were successfully fabricated by the gas evaporation method. Thermoelectric properties, i.e., Seebeck coefficient and electrical conductivity, both decreased with decreasing grain size. This was attributed to the decrease in carrier mobility exceeding the increase in carrier concentration with decreasing grain size. It was clarified that the effects of grain boundaries and of oxidation on carrier mobility are considerably large.

Effects of post-annealing on thermoelectric properties of bismuth–tellurium thin films deposited by co-sputtering

2011 ◽  
Vol 88 (5) ◽  
pp. 541-544 ◽  
Author(s):  
Seong-jae Jeon ◽  
Minsub Oh ◽  
Haseok Jeon ◽  
Seungmin Hyun ◽  
Hoo-jeong Lee
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Post Annealing

Post-annealing Effect on Microstructures and Thermoelectric Properties of Bi0.45Sb1.55Te3 Thin Films Deposited by Co-sputtering

2012 ◽  
Vol 41 (11) ◽  
pp. 3068-3072 ◽  
Author(s):  
Junqiang Song ◽  
Xihong Chen ◽  
Yunshan Tang ◽  
Qin Yao ◽  
Lidong Chen
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Annealing Effect ◽  
Post Annealing

Annealing Effects on Microstructure and Thermoelectric Properties of Bi2(Te0.95Se0.05)3 Thin Films Prepared by Flash Evaporation Method

2011 ◽  
Vol 287-290 ◽  
pp. 2434-2437
Author(s):  
Xing Kai Duan ◽  
Yue Zhen Jiang
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Flash Evaporation ◽  
Thermoelectric Power Factor ◽  
Evaporation Method ◽  
Glass Substrates ◽  
Annealing Effects ◽  
Thermoelectric Thin Films

N-type Bi2(Te0.95Se0.05)3thermoelectric thin films with thickness 800 nm have been deposited on glass substrates by flash evaporation method at 473 K. The structures, morphology of the thin films were characterized by X-ray diffraction and field emission scanning electron microscope, respectively. Thermoelectric properties of the thin films have been evaluated by measurements of Seebeck coefficient and electrical resistivity at 300 K. Annealing effect on Seebeck coefficient and electrical resistivity of the thin films was examined in the temperature range 373–573 K. When annealed at 473 K for 1 h, Seebeck coefficient and electrical resistivity are –180 μV/K and 2.7 mΩcm, respectively. Thermoelectric power factor is improved to 12 µW/cmK2.

Effect of annealing temperature on thermoelectric properties of zinc nitride thin films grown by thermal evaporation method

2020 ◽  
Vol 46 (16) ◽  
pp. 25992-25995
Author(s):  
Hassnain Zaman ◽  
Jolly Jacob ◽  
Khurram Mehboob ◽  
K. Mahmood ◽  
U. Rehman ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Evaporation Method ◽  
Zinc Nitride
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