scholarly journals All-conjugated donor–acceptor block copolymers featuring a pentafulvenyl-polyisocyanide-acceptor

2020 ◽  
Vol 11 (11) ◽  
pp. 1852-1859
Author(s):  
Sandra Schraff ◽  
Sudeshna Maity ◽  
Laura Schleeper ◽  
Yifan Dong ◽  
Sebastian Lucas ◽  
...  
Keyword(s):  
Block Copolymers ◽  
Electron Mobility ◽  
Self Assembly ◽  
High Electron ◽  
High Electron Mobility ◽  
Device Applications ◽  
Donor Acceptor

A fulvenyl-functionalized polyisocyanide (PIC2) with a high electron mobility of μe = 10−2 cm2 V−1 s−1 has been incorporated into donor–acceptor block copolymers. Their self-assembly and bulk-morphology have been studied, and potential device applications have been explored.

scholarly journals Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 25 ◽  
Author(s):  
Chia-Hao Liu ◽  
Hsien-Chin Chiu ◽  
Chong-Rong Huang ◽  
Kuo-Jen Chang ◽  
Chih-Tien Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Schottky Contact ◽  
High Mobility ◽  
High Electron Mobility Transistor ◽  
Nitrogen Vacancy ◽  
High Electron ◽  
High Electron Mobility ◽  
Switching Power ◽  
Device Applications ◽  
The Impact

The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated. In this study, a Zr metal as a gate contact to p-GaN/AlGaN/GaN high mobility transistor (HEMT) was first applied to improve the hole accumulation at the high gate voltage region. In addition, the ZrN interface is also beneficial for improving the Schottky barrier with low nitrogen vacancy induced traps. The features of Zr are low work function (4.05 eV) and high melting point, which are two key parameters with p-GaN Schottky contact at reversed voltage. Therefore, Zr/p-GaN interface exhibits highly potential for GaN-based switching power device applications.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Polymer Crystals: Approaching Crystal Structure and High Electron Mobility in Conjugated Polymer Crystals (Adv. Mater. 10/2021)

2021 ◽  
Vol 33 (10) ◽  
pp. 2170075
Author(s):  
Ze‐Fan Yao ◽  
Yu‐Qing Zheng ◽  
Jin‐Hu Dou ◽  
Yang Lu ◽  
Yi‐Fan Ding ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electron Mobility ◽  
Conjugated Polymer ◽  
High Electron ◽  
High Electron Mobility ◽  
Polymer Crystals

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

Sign in / Sign up

Export Citation Format

Share Document