Bright and fast-response perovskite light-emitting diodes with an ICBA:modified-C60 nanocomposite electrical confinement layer

Nanoscale ◽  
2020 ◽  
Vol 12 (6) ◽  
pp. 4061-4068 ◽  
Author(s):  
Chia-Lung Tsai ◽  
Yi-Chen Lu ◽  
Shou-En Chiang ◽  
Chih-Min Yu ◽  
Hsin-Ming Cheng ◽  
...  
Keyword(s):  
Electron Transport ◽  
Light Emitting Diodes ◽  
Fast Response ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Blocking Layer ◽  
Light Emitting ◽  
Hole Blocking Layer

Bright and fast-response CH3NH3PbBr3 perovskite light-emitting diodes (PeLEDs) are realized by using ICBA:modified C60 (MC60) nanocomposites as the hole blocking layer (HBL) and electron transport layer (ETL).

scholarly journals Efficient perovskite light-emitting diodes based on a solution-processed tin dioxide electron transport layer

2018 ◽  
Vol 6 (26) ◽  
pp. 6996-7002 ◽  
Author(s):  
Heyong Wang ◽  
Hongling Yu ◽  
Weidong Xu ◽  
Zhongcheng Yuan ◽  
Zhibo Yan ◽  
...  
Keyword(s):  
Electron Transport ◽  
Tin Dioxide ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Solution Processed ◽  
Light Emitting

Solution-processed tin dioxide is employed as an electron transport layer in n–i–p-structured perovskite light-emitting diodes realizing an EQE of 7.9%.

Improving Charge-Imbalanced Problem of Quantum Dot Light-Emitting Diodes with TPBi/ZnO Electron Transport Layer

2019 ◽  
Vol 19 (10) ◽  
pp. 6152-6157
Author(s):  
Sanghyun Lee ◽  
Junekyun Park ◽  
Jaewon Jeong ◽  
Jaehyun Kim ◽  
Juhyung Kim ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting

Boosting the performance of quantum dot light-emitting diodes with Mg and PVP Co-doped ZnO as electron transport layer

2019 ◽  
Vol 75 ◽  
pp. 105411 ◽  
Author(s):  
Rashed Alsharafi ◽  
Yangbin Zhu ◽  
Fushan Li ◽  
Zhongwei Xu ◽  
Hailong Hu ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Doped Zno ◽  
Co Doped

High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing

RSC Advances ◽  
2016 ◽  
Vol 6 (76) ◽  
pp. 72462-72470 ◽  
Author(s):  
Jingling Li ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehui Xie ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Zno Nanoparticles ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
High Luminance ◽  
Light Emitting

In this work, all-solution processed, multi-layer yellow QLEDs, consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of ligand exchanged CuInS2/ZnS QDs, and electron transport layer of ZnO nanoparticles, are fabricated.

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