scholarly journals Phase-field investigation of the stages in radial growth of core–shell Ge/Ge1−xSnx nanowires

Nanoscale ◽  
2019 ◽  
Vol 11 (45) ◽  
pp. 21974-21980 ◽  
Author(s):  
Yanming Wang ◽  
Andrew C. Meng ◽  
Paul C. McIntyre ◽  
Wei Cai
Keyword(s):  
Phase Field ◽  
Radial Growth ◽  
Shell Growth ◽  
Phase Field Model ◽  
Chemical Vapor ◽  
Field Investigation ◽  
Chemical Vapor Deposition Method ◽  
Growth Speed ◽  
Core Shell ◽  
Three Stages

Phase field model is developed to investigate the radial growth of core shell Ge/Ge1−xSnx nanowires via the chemical vapor deposition method. We show that the shell growth speed of these nanowires exhibits three stages.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

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