Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires

Nanoscale ◽  
2019 ◽  
Vol 11 (18) ◽  
pp. 9207-9215 ◽  
Author(s):  
Xiaoming Yuan ◽  
Lin Li ◽  
Ziyuan Li ◽  
Fan Wang ◽  
Naiyin Wang ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Stacking Faults ◽  
Optical Emission ◽  
Carrier Dynamics ◽  
Core Shell ◽  
Gaas Nanowires ◽  
Shell Nanowires

Superior passivation of GaInP shell and the revealed carrier dynamics in WZ polytype GaAs nanowires.

scholarly journals Direct Measure of Strain and Electronic Structure in GaAs/GaP Core−Shell Nanowires

Nano Letters ◽  
2010 ◽  
Vol 10 (3) ◽  
pp. 880-886 ◽  
Author(s):  
Mohammad Montazeri ◽  
Melodie Fickenscher ◽  
Leigh M. Smith ◽  
Howard E. Jackson ◽  
Jan Yarrison-Rice ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Core Shell ◽  
Direct Measure ◽  
Shell Nanowires

scholarly journals Multiband model of the valence-band electronic structure in cylindrical GaAs nanowires

2010 ◽  
Vol 64 (3) ◽  
pp. 165-170
Author(s):  
Nemanja Cukaric ◽  
Milan Tadic
Keyword(s):  
Energy Levels ◽  
Outer Radius ◽  
Dispersion Relations ◽  
Core Shell ◽  
Type I ◽  
Free Standing ◽  
Gaas Nanowires ◽  
Multiband Model ◽  
Shell Nanowires

We compute the hole states in the GaAs free-standing nanowires, and in the GaAs/(Al,Ga)As core-shell nanowires of type I-s, which are grown along the [100] direction. The hole states are extracted from the 4-band Luttinger-Kohn Hamiltonian, which explicitly takes into account mixing between the light and heavy holes. The axial aproximation is adopted, which allowed classification of states according to the total angular monentum (fz when expressed in units of the Planck constant). The envelope functions are expanded in Bessel functions of the first kind. The dispersion relations of the subbands E(kz) obtained by the devised method do not resemble parabolas, which is otherwise a feature of the dispersion relations of the conduction subbands. Furthermore, the energy levels of holes whose total orbital momentum is fz=1/2 are shown to cross for a free-standing wire. The low energy fz=1/2 states are found to anticross, but these anticrossings turn into crossings when the ratio of the inner and outer radius of the core-shell wire takes a certain value. The influence of the geometric parameters on the dispersion relations is considered for both free standing and core-shell nanowires.

scholarly journals Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires

2020 ◽  
Vol 8 ◽  
Author(s):  
Nian Jiang ◽  
Hannah J. Joyce ◽  
Patrick Parkinson ◽  
Jennifer Wong-Leung ◽  
Hark Hoe Tan ◽  
...  
Keyword(s):  
Significant Variation ◽  
Volume Ratio ◽  
Gaas Layer ◽  
Core Shell ◽  
Strongly Correlated ◽  
Semiconductor Nanowire ◽  
Gaas Nanowires ◽  
Pl Emission ◽  
Nanowire Device ◽  
Shell Nanowires

The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoelectronics arising from its unique geometry. This structure gives rise to a large surface area-to-volume ratio and therefore understanding the effect of nanowire surfaces on nanowire optoelectronic properties is necessary for engineering related devices. We present a systematic study of the non-uniform optical properties of Au-catalyzed GaAs/AlGaAs core–shell nanowires introduced by changes in the sidewall faceting. Significant variation in intra-wire photoluminescence (PL) intensity and PL lifetime (τPL) was observed along the nanowire axis, which was strongly correlated with the variation of sidewall facets from {112} to {110} from base to tip. Faster recombination occurred in the vicinity of {112}-oriented GaAs/AlGaAs interfaces. An alternative nanowire heterostructure, the radial quantum well tube consisting of a GaAs layer sandwiched between two AlGaAs barrier layers, is proposed and demonstrates superior uniformity of PL emission along the entire length of nanowires. The results emphasize the significance of nanowire facets and provide important insights for nanowire device design.

scholarly journals Electronic structure of InAs/GaSb core-shell nanowires

2012 ◽  
Vol 86 (16) ◽  
Author(s):  
V. V. Ravi Kishore ◽  
B. Partoens ◽  
F. M. Peeters
Keyword(s):  
Electronic Structure ◽  
Core Shell ◽  
Shell Nanowires

Photocatalytic Mechanism Control and Study of Carrier Dynamics in CdS@C3N5 Core–Shell Nanowires

2021 ◽  
Vol 13 (40) ◽  
pp. 47418-47439
Author(s):  
Kazi M. Alam ◽  
Charles E. Jensen ◽  
Pawan Kumar ◽  
Riley W. Hooper ◽  
Guy M. Bernard ◽  
...  
Keyword(s):  
Carrier Dynamics ◽  
Core Shell ◽  
Photocatalytic Mechanism ◽  
Mechanism Control ◽  
Shell Nanowires

Contactless Optical Characterization of Carrier Dynamics in Free-Standing InAs-InAlAs Core–Shell Nanowires on Silicon

Nano Letters ◽  
2019 ◽  
Vol 19 (2) ◽  
pp. 990-996 ◽  
Author(s):  
Xinxin Li ◽  
Kailing Zhang ◽  
Julian Treu ◽  
Lukas Stampfer ◽  
Gregor Koblmueller ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Carrier Dynamics ◽  
Core Shell ◽  
Free Standing ◽  
Shell Nanowires

scholarly journals Direct Measure of Strain and Electronic Structure in GaAs∕GaP Core-Shell Nanowires

2011 ◽  
Author(s):  
H. E. Jackson ◽  
M. Montazeri ◽  
M. Fickenscher ◽  
L. M. Smith ◽  
J. M. Yarrison-Rice ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Core Shell ◽  
Direct Measure ◽  
Shell Nanowires
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