Structural and electrical characterization of monolithic core–double shell n-GaN/Al/p-AlGaN nanowire heterostructures grown by molecular beam epitaxy

Nanoscale ◽  
2019 ◽  
Vol 11 (9) ◽  
pp. 3888-3895 ◽  
Author(s):  
S. M. Sadaf ◽  
Y.-H. Ra ◽  
S. Zhao ◽  
T. Szkopek ◽  
Z. Mi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Nanowire Heterostructures

We have studied the epitaxy and structural characterization of monolithic n-GaN/Al/p-AlGaN nanowire heterostructures.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

2000 ◽  
Vol 360 (1-2) ◽  
pp. 195-204 ◽  
Author(s):  
G. Kiriakidis ◽  
K. Moschovis ◽  
P. Uusimaa ◽  
A. Salokatve ◽  
M. Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Green Laser ◽  
Gaas Substrates

Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique

2013 ◽  
Vol 103 (9) ◽  
pp. 092103 ◽  
Author(s):  
Vl. Kolkovsky ◽  
Z. R. Zytkiewicz ◽  
M. Sobanska ◽  
K. Klosek
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Gan Nanowires

Structural characterization of thin GaN epilayers directly grown on on-axis 6H–SiC(0001) by plasma-assisted molecular beam epitaxy

1998 ◽  
Vol 73 (26) ◽  
pp. 3869-3871 ◽  
Author(s):  
B. Yang ◽  
A. Trampert ◽  
B. Jenichen ◽  
O. Brandt ◽  
K. H. Ploog
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam

Electrical characterization of gallium planar‐doped ZnSe grown by molecular‐beam epitaxy

1989 ◽  
Vol 66 (9) ◽  
pp. 4295-4300 ◽  
Author(s):  
S. M. Shibli ◽  
M. C. Tamargo ◽  
J. L. De Miguel ◽  
B. J. Skromme ◽  
R. E. Nahory ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization
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