Silicon quantum dot-assisted synthesis of MoS2/rGO sandwich structures with excellent supercapacitive performance

2019 ◽  
Vol 43 (22) ◽  
pp. 8660-8668 ◽  
Author(s):  
Jinzhu Wu ◽  
Beibei Li ◽  
Yaxiu Feng ◽  
Yanbin Shao ◽  
Xiaohong Wu ◽  
...  

A MoS2/rGO nanocomposite with a unique sandwich structure is synthesized by using silicon quantum dots (SiQDs), exhibiting excellent electrochemical performance for supercapacitors.

2016 ◽  
Vol 18 (37) ◽  
pp. 25837-25851 ◽  
Author(s):  
Bibhuti Bhusan Sahu ◽  
Yongyi Yin ◽  
Sven Gauter ◽  
Jeon Geon Han ◽  
Holger Kersten

The authors growth and microstructure of a silicon quantum dot film by tailoring the plasma chemistry and deposition energy are studied.


2009 ◽  
Vol 93 (9) ◽  
pp. 1524-1530 ◽  
Author(s):  
X.J. Hao ◽  
E.-C. Cho ◽  
G. Scardera ◽  
Y.S. Shen ◽  
E. Bellet-Amalric ◽  
...  

2018 ◽  
Vol 10 (34) ◽  
pp. 4129-4135 ◽  
Author(s):  
Lei Zhang ◽  
ZhaoRong Tang ◽  
YongPing Dong

Water dispersible silicon quantum dots (SiQDs) were synthesized by in situ growth under microwave irradiation.


2020 ◽  
Vol 8 (44) ◽  
pp. 23395-23403
Author(s):  
Wen Liu ◽  
Jujun Yuan ◽  
Youchen Hao ◽  
Hirbod Maleki Kheimeh Sari ◽  
Jingjing Wang ◽  
...  

A quantum dot-assisted self-assembled MoSe2–MoO3 heterogeneous structure is investigated for sodium/potassium storage for the first time. The quantum dot-assisted self-assembled MoSe2–MoO3 anode possesses a better electrochemical performance.


Nanoscale ◽  
2018 ◽  
Vol 10 (22) ◽  
pp. 10554-10563 ◽  
Author(s):  
Diwen Shi ◽  
Liuyang Zhang ◽  
Nengduo Zhang ◽  
Yong-Wei Zhang ◽  
Zhi Gen Yu ◽  
...  

Greatly enhanced electrochemical performance is obtained through surface modification of ultrathin interlaced Ni(OH)2 nanosheets with Co(OH)2 quantum dots.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sinan Bugu ◽  
Shimpei Nishiyama ◽  
Kimihiko Kato ◽  
Yongxun Liu ◽  
Shigenori Murakami ◽  
...  

AbstractWe demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.


2019 ◽  
Vol 3 (9) ◽  
pp. 2499-2508 ◽  
Author(s):  
Maiwen Zhang ◽  
Wenwen Liu ◽  
Ruilin Liang ◽  
Ricky Tjandra ◽  
Aiping Yu

A method that adapts graphene quantum dots (GQDs) as structural inducing agents to tune the morphology of MnCo2O4.5/GQDs composites is developed, and utilized to enhance their electrochemical performance for supercapacitor applications.


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