Superior phototransistors based on a single ZnO nanoparticle with high mobility and ultrafast response time

2020 ◽  
Vol 5 (1) ◽  
pp. 82-88 ◽  
Author(s):  
Linh-Nam Nguyen ◽  
Wen-Hao Chang ◽  
Chii-Dong Chen ◽  
Yann-Wen Lan
Keyword(s):  
Response Time ◽  
Single Crystal ◽  
Single Particle ◽  
Rise Time ◽  
High Performance ◽  
High Mobility ◽  
Zno Nanoparticle ◽  
Excellent Candidate

We show that devices containing a ZnO single particle exhibit mobility values one order higher than single-crystal nanowires and a record-high photoresponse rise time. This device could be an excellent candidate for high performance phototransistors.

scholarly journals High-performance, semiconducting membrane composed of ultrathin, single-crystal organic semiconductors

2019 ◽  
Vol 117 (1) ◽  
pp. 80-85 ◽  
Author(s):  
Tatsuyuki Makita ◽  
Shohei Kumagai ◽  
Akihito Kumamoto ◽  
Masato Mitani ◽  
Junto Tsurumi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Organic Semiconductors ◽  
High Performance ◽  
Printed Electronics ◽  
Electronic Device ◽  
Molecular Layer ◽  
High Mobility ◽  
Building Blocks ◽  
Solution Processed ◽  
Transfer Method

Thin film transistors (TFTs) are indispensable building blocks in any electronic device and play vital roles in switching, processing, and transmitting electronic information. TFT fabrication processes inherently require the sequential deposition of metal, semiconductor, and dielectric layers and so on, which makes it difficult to achieve reliable production of highly integrated devices. The integration issues are more apparent in organic TFTs (OTFTs), particularly for solution-processed organic semiconductors due to limits on which underlayers are compatible with the printing technologies. We demonstrate a ground-breaking methodology to integrate an active, semiconducting layer of OTFTs. In this method, a solution-processed, semiconducting membrane composed of few-molecular-layer–thick single-crystal organic semiconductors is exfoliated by water as a self-standing ultrathin membrane on the water surface and then transferred directly to any given underlayer. The ultrathin, semiconducting membrane preserves its original single crystallinity, resulting in excellent electronic properties with a high mobility up to 12cm2⋅V−1⋅s−1. The ability to achieve transfer of wafer-scale single crystals with almost no deterioration of electrical properties means the present method is scalable. The demonstrations in this study show that the present transfer method can revolutionize printed electronics and constitute a key step forward in TFT fabrication processes.

CHASSIS DESIGN & PERFORMANCE ANALYSIS FOR THE EUROPEAN EXOMARS ROVER

2005 ◽  
Vol 29 (4) ◽  
pp. 507-517
Author(s):  
Alex Ellery ◽  
Lutz Richter ◽  
Reinhold Bertrand
Keyword(s):  
Performance Analysis ◽  
Weight Distribution ◽  
High Performance ◽  
High Mobility ◽  
Scientific Instrument ◽  
Equal Weight ◽  
Scientific Instruments ◽  
Design Issues ◽  
Martian Surface ◽  
Considerable Size

The European Space Agency’s (ESA) ExoMars rover has recently been subject to a Phase A study led by EADS Astrium, UK. This rover mission represents a highly ambitious venture in that the rover is of considerable size ~200+kg with high mobility carrying a highly complex scientific instrument suite (Pasteur) of up to 40 kg in mass devoted to exobiological investigation of the Martian surface and sub-surface. The chassis design has been a particular challenge given the inhospitable terrain on Mars and the need to traverse such terrain robustly in order to deliver the scientific instruments to science targets of exobiological interest, We present some of the results and design issues encountered during the Phase A study related to the chassis. In particular, we have focussed on the overall tractive performance of a number of candidate chassis designs and selected the RCL (Science & Technology Rover Company Ltd in Russian) concept C design as the baseline option in terms of high performance with minimal mechanical complexity overhead. This design is a six-wheeled double-rocker bogie design to provide springless suspension and maintain approximately equal weight distribution across each wheel.

scholarly journals Dual-Cation Electrolytes Crosslinked with MXene for High-Performance Electrochromic Devices

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 874
Author(s):  
Soyoung Bae ◽  
Youngno Kim ◽  
Jeong Min Kim ◽  
Jung Hyun Kim
Keyword(s):  
Ionic Conductivity ◽  
Response Time ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Fast Response ◽  
High Ionic Conductivity ◽  
Electrochromic Device ◽  
Fast Response Time ◽  
Coloration Efficiency ◽  
Conduction Pathway

MXene, a 2D material, is used as a filler to manufacture polymer electrolytes with high ionic conductivity because of its unique sheet shape, large specific surface area and high aspect ratio. Because MXene has numerous -OH groups on its surface, it can cause dehydration and condensation reactions with poly(4-styrenesulfonic acid) (PSSA) and consequently create pathways for the conduction of cations. The movement of Grotthuss-type hydrogen ions along the cation-conduction pathway is promoted and a high ionic conductivity can be obtained. In addition, when electrolytes composed of a conventional acid or metal salt alone is applied to an electrochromic device (ECD), it does not bring out fast response time, high coloration efficiency and transmittance contrast simultaneously. Therefore, dual-cation electrolytes are designed for high-performance ECDs. Bis(trifluoromethylsulfonyl)amine lithium salt (LiTFSI) was used as a source of lithium ions and PSSA crosslinked with MXene was used as a source of protons. Dual-Cation electrolytes crosslinked with MXene was applied to an indium tin oxide-free, all-solution-processable ECD. The effect of applying the electrolyte to the device was verified in terms of response time, coloration efficiency and transmittance contrast. The ECD with a size of 5 × 5 cm2 showed a high transmittance contrast of 66.7%, fast response time (8 s/15 s) and high coloration efficiency of 340.6 cm2/C.

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

High-performance near-infrared photodetectors based on C3N quantum dots integrated with single-crystal graphene

2021 ◽  
Author(s):  
Yun Zhao ◽  
Xiaoqiang Feng ◽  
Menghan Zhao ◽  
Xiaohu Zheng ◽  
Zhiduo Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Single Crystal ◽  
High Performance ◽  
Near Infrared ◽  
Fast Response ◽  
Local Electric Field ◽  
Infrared Photodetectors ◽  
Photocurrent Response

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.

Triple‐Cation and Mixed‐Halide Perovskite Single Crystal for High‐Performance X‐ray Imaging

2021 ◽  
Vol 33 (8) ◽  
pp. 2006010
Author(s):  
Yucheng Liu ◽  
Yunxia Zhang ◽  
Xuejie Zhu ◽  
Jiangshan Feng ◽  
Ioannis Spanopoulos ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
X Ray ◽  
X Ray Imaging ◽  
Halide Perovskite
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