scholarly journals A dual mode electronic synapse based on layered SnSe films fabricated by pulsed laser deposition

2020 ◽  
Vol 2 (3) ◽  
pp. 1152-1160
Author(s):  
Xinxin Chen ◽  
Chun-Hung Suen ◽  
Hei-Man Yau ◽  
Feichi Zhou ◽  
Yang Chai ◽  
...  

Integration of short-term plasticity (STP) and long-term plasticity (LTP) in a single layered SnSe-based device has been achieved.

2019 ◽  
Vol 55 (83) ◽  
pp. 12447-12450 ◽  
Author(s):  
Jongmin Lee ◽  
Hongji Yoon ◽  
Seungkyu Kim ◽  
Sehun Seo ◽  
Jaesun Song ◽  
...  

Reliable CuBi2O4/NiO heterostructure thin film photocathodes with high density and sharp interface are demonstrated via pulsed laser deposition.


2000 ◽  
Vol 617 ◽  
Author(s):  
C. J. K. Richardson ◽  
M. H. Wisnioski ◽  
J. B. Spicer ◽  
J. D. Demaree ◽  
M. W. Cole ◽  
...  

AbstractThis research investigates the potential of pulsed laser deposition to create reliable high current ohmic contacts of Ni2Si on single crystal 4H-SiC. Since this stoichiometry is the stable interphase in the nickel-silicon carbide diffusion couple, direct deposition eliminates the detrimental excess carbon normally formed by direct sintering Ni on SiC, the surface roughening that results from this sintering as well as the need for post-deposition high-temperature (900°C) anneals that are required in complex multi-component contacts. This study examines the processing parameters that must be used during deposition to obtain the desired microstructural characteristics for the contact. Pulsed laser deposition of nickel silicide produces smooth films with an amorphous or nanocrystalline structure interspersed with macroparticles. Macroparticle formation on the resulting films appear in the form of solidified droplets of the eutectic composition nickel silicide (3:1) that form during the long term target processing. The dependence of the number and size distributions of these droplets on laser fluence sample temperature is examined.


1996 ◽  
Vol 35 (1-3) ◽  
pp. 228-233 ◽  
Author(s):  
M.J Schöning ◽  
D Tsarouchas ◽  
L Beckers ◽  
J Schubert ◽  
W Zander ◽  
...  

Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.


1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-261-Pr9-264
Author(s):  
M. Tyunina ◽  
J. Levoska ◽  
A. Sternberg ◽  
V. Zauls ◽  
M. Kundzinsh ◽  
...  

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.


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