scholarly journals Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate

2019 ◽  
Vol 1 (9) ◽  
pp. 3537-3546 ◽  
Author(s):  
Boqun Dong ◽  
Mona E. Zaghloul
Keyword(s):  
Acoustic Waves ◽  
Gaas Substrate ◽  
Surface Acoustic Waves ◽  
P Type

Enhancement of SAWs propagating along the surface of a highly doped p-type GaAs substrate is achieved using a ZnO/SiO2 island.

scholarly journals Enhancement of Photoemission on p-Type GaAs Using Surface Acoustic Waves

Sensors ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 2419
Author(s):  
Boqun Dong ◽  
Andrei Afanasev ◽  
Rolland Johnson ◽  
Mona Zaghloul
Keyword(s):  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Device Fabrication ◽  
Effective Lifetime ◽  
Additional Layer ◽  
Carrier Recombination ◽  
Multiphysics Simulations ◽  
Current Voltage ◽  
Piezoelectric Fields ◽  
P Type

We demonstrate that photoemission properties of p-type GaAs can be altered by surface acoustic waves (SAWs) generated on the GaAs surface due to dynamical piezoelectric fields of SAWs. Multiphysics simulations indicate that charge-carrier recombination is greatly reduced, and electron effective lifetime in p-doped GaAs may increase by a factor of 10× to 20×. It implies a significant increase, by a factor of 2× to 3×, of quantum efficiency (QE) for GaAs photoemission applications, like GaAs photocathodes. Conditions of different SAW wavelengths, swept SAW intensities, and varied incident photon energies were investigated. Essential steps in SAW device fabrication on a GaAs substrate are demonstrated, including deposition of an additional layer of ZnO for piezoelectric effect enhancement, measurements of current–voltage (I–V) characteristics of the SAW device, and ability to survive high-temperature annealing. Results obtained and reported in this study provide the potential and basis for future studies on building SAW-enhanced photocathodes, as well as other GaAs photoelectric applications.

Porosity Dependence of the Velocity of Surface and Bulk Acoustic Waves in Porous Silicon Carbide Films

2007 ◽  
Vol 556-557 ◽  
pp. 745-748 ◽  
Author(s):  
C.K. Young ◽  
G.T. Andrews ◽  
Maynard J. Clouter ◽  
Yue Ke ◽  
Wolfgang J. Choyke ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
Acoustic Waves ◽  
Crystalline Silicon ◽  
Surface Acoustic Waves ◽  
Effective Medium ◽  
Bulk Acoustic Wave ◽  
Porous Silicon Carbide ◽  
Effective Medium Model ◽  
P Type

Brillouin light scattering spectroscopy was used to probe porous silicon carbide films formed from p-type 6H crystalline silicon carbide. The porosities of the films ranged from 30% to 58%. Surface and bulk acoustic wave velocities were measured and compared with those calculated from the Mori-Tanaka acoustic effective medium model. Qualitative agreement is obtained between the experimentally determined velocities and those predicted by Mori-Tanaka acoustic effective medium models with spherical pores and, in the case of surface acoustic waves, also with prolate spheroidal pores with shape factor equal to 0.2. The model demonstrates the importance of morphology in determining the behavior of acoustic waves in a porous material.

scholarly journals Surface Acoustic Wave-Induced Electroluminescence Intensity Oscillation in Planar Light-Emitting Devices

2005 ◽  
Vol 869 ◽  
Author(s):  
Marco Cecchini ◽  
Vincenzo Piazza ◽  
Fabio Beltram ◽  
Martin Ward ◽  
Andrew Shields ◽  
...  
Keyword(s):  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Photon Counting ◽  
Type Region ◽  
Light Emitting ◽  
Intensity Oscillation ◽  
Light Emitting Devices ◽  
Electroluminescence Intensity ◽  
P Type ◽  
Wave Induced

AbstractElectroluminescence (EL) emission controlled by means of surface acoustic waves (SAWs) in planar light-emitting diodes (pLEDs) is demonstrated. Interdigital transducers (IDTs) for SAW generation were integrated onto pLEDs fabricated following a scheme compatible with SAW propagation [1]. EL in presence of SAW was studied by time-correlated photon-counting techniques. We found intensity oscillation at the SAW frequency (˜1 GHz) demonstrating electron injection into the p-type region synchronous with the SAW wavefronts.

Characterization of RF Sputtered ZnO Piezoelectric Films Using Transmission Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 86-87
Author(s):  
Kemining W. Yeh ◽  
Richard S. Muller ◽  
Wei-Kuo Wu ◽  
Jack Washburn
Keyword(s):  
Integrated Circuit ◽  
Acoustic Waves ◽  
New Technology ◽  
Surface Acoustic Waves ◽  
Electromechanical Properties ◽  
Leading Role ◽  
Saw Devices ◽  
Transmission Electron ◽  
High Degree

Considerable and continuing interest has been shown in the thin film transducer fabrication for surface acoustic waves (SAW) in the past few years. Due to the high degree of miniaturization, compatibility with silicon integrated circuit technology, simplicity and ease of design, this new technology has played an important role in the design of new devices for communications and signal processing. Among the commonly used piezoelectric thin films, ZnO generally yields superior electromechanical properties and is expected to play a leading role in the development of SAW devices.

Attenuation of surface acoustic waves by quantum dots

1998 ◽  
Vol 77 (5) ◽  
pp. 1195-1202
Author(s):  
Andreas Knabchen Yehoshua, B. Levinson, Ora
Keyword(s):  
Quantum Dots ◽  
Acoustic Waves ◽  
Surface Acoustic Waves

Brillouin light scattering from surface acoustic waves in photonic microwires

2014 ◽  
Author(s):  
Jean-Charles Beugnot ◽  
Sylvie Lebrun ◽  
Gilles Pauliat ◽  
Vincent Laude ◽  
Thibaut Sylvestre
Keyword(s):  
Light Scattering ◽  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Brillouin Light Scattering
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