The synergy of host–guest nonfullerene acceptors enables 16%-efficiency polymer solar cells with increased open-circuit voltage and fill-factor

2019 ◽  
Vol 6 (10) ◽  
pp. 2094-2102 ◽  
Author(s):  
Yuan Chang ◽  
Tsz-Ki Lau ◽  
Ming-Ao Pan ◽  
Xinhui Lu ◽  
He Yan ◽  
...  

A Voc-increased approach with ITCT as the higher-LUMO-level acceptor guest supplies 16.1%-efficiency fullerene-free ternary solar cells with both Voc and FF simultaneously increased.

2011 ◽  
Vol 23 (40) ◽  
pp. 4636-4643 ◽  
Author(s):  
Zhicai He ◽  
Chengmei Zhong ◽  
Xun Huang ◽  
Wai-Yeung Wong ◽  
Hongbin Wu ◽  
...  

Nano Energy ◽  
2017 ◽  
Vol 32 ◽  
pp. 216-224 ◽  
Author(s):  
Zicheng Ding ◽  
Xiaojing Long ◽  
Bin Meng ◽  
Keyan Bai ◽  
Chuandong Dou ◽  
...  

2018 ◽  
Vol 42 (7) ◽  
pp. 5314-5322
Author(s):  
Yuqian Sun ◽  
Biao Guo ◽  
Youchun Chen ◽  
Weifeng Zhang ◽  
Xiang Li ◽  
...  

Ternary polymer solar cells with simultaneously improved VOC, JSC and FF have been achieved by doping PV12 as a third component.


2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.


ChemPlusChem ◽  
2021 ◽  
Author(s):  
Maria J. Álvaro‐Martins ◽  
José G. Sánchez ◽  
Giulia Lavarda ◽  
Desiré Molina ◽  
Josep Pallarès ◽  
...  

ACS Omega ◽  
2017 ◽  
Vol 2 (4) ◽  
pp. 1617-1624 ◽  
Author(s):  
Takuji Kusumi ◽  
Takayuki Kuwabara ◽  
Kyosuke Fujimori ◽  
Takumi Minami ◽  
Takahiro Yamaguchi ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (79) ◽  
pp. 64724-64730 ◽  
Author(s):  
Derya Baran ◽  
Sule Erten-Ela ◽  
Andreas Kratzer ◽  
Tayebeh Ameri ◽  
Christoph J. Brabec ◽  
...  

In this work, a bis-adduct C60 derivative was facilely synthesized using an alkyl solubilizing group. This semiconductor offers a higher LUMO level compared to PCBM, which resulted in a significantly enhanced Voc of 0.73 V in organic solar cells.


2013 ◽  
Vol 4 (11) ◽  
pp. 3390 ◽  
Author(s):  
Guobing Zhang ◽  
Jianyu Yuan ◽  
Peng Li ◽  
Jingxuan Ma ◽  
Hongbo Lu ◽  
...  

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