Structural design of cubic Sr,V:CeFeO3 thin films with a strong magneto-optical effect and high compatibility with a Si substrate

2020 ◽  
Vol 49 (23) ◽  
pp. 7713-7721
Author(s):  
Nanxi Lin ◽  
Shengnan Zhang ◽  
Haixin Chen ◽  
Yunjin Chen ◽  
Xin Chen ◽  
...  

Orthorhombic CeFeO3 is optimized to be cubic perovskite with high compatibility with Si substrate by introducing Sr, V ions into lattice. Cubic Sr,V:CeFeO3 film exhibit strong magneto-optical effect due to spin-coupling hybrid of Ce 4f with Fe/V 3d.

1988 ◽  
Vol 64 (10) ◽  
pp. 5846-5848 ◽  
Author(s):  
S. Taketomi ◽  
S. Ogawa ◽  
H. Miyajima ◽  
S. Chikazumi ◽  
K. Nakao ◽  
...  

2020 ◽  
Vol 127 (21) ◽  
pp. 213904 ◽  
Author(s):  
Kartik Samanta ◽  
Marjana Ležaić ◽  
Maximilian Merte ◽  
Frank Freimuth ◽  
Stefan Blügel ◽  
...  

1992 ◽  
Vol 104-107 ◽  
pp. 1031-1032 ◽  
Author(s):  
Fang Rui-yi ◽  
Dai Dao-sheng ◽  
Zhang Sheng ◽  
Long Pin ◽  
Ma Ting-jun ◽  
...  

Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.


Author(s):  
Jonathan Ogle ◽  
Daniel Powell ◽  
Eric Amerling ◽  
Detlef Matthias Smilgies ◽  
Luisa Whittaker-Brooks

<p>Thin film materials have become increasingly complex in morphological and structural design. When characterizing the structure of these films, a crucial field of study is the role that crystallite orientation plays in giving rise to unique electronic properties. It is therefore important to have a comparative tool for understanding differences in crystallite orientation within a thin film, and also the ability to compare the structural orientation between different thin films. Herein, we designed a new method dubbed the mosaicity factor (MF) to quantify crystallite orientation in thin films using grazing incidence wide-angle X-ray scattering (GIWAXS) patterns. This method for quantifying the orientation of thin films overcomes many limitations inherent in previous approaches such as noise sensitivity, the ability to compare orientation distributions along different axes, and the ability to quantify multiple crystallite orientations observed within the same Miller index. Following the presentation of MF, we proceed to discussing case studies to show the efficacy and range of application available for the use of MF. These studies show how using the MF approach yields quantitative orientation information for various materials assembled on a substrate.<b></b></p>


1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.


2021 ◽  
pp. 1-1
Author(s):  
Alexis Dufour ◽  
Laure Bsawmaii ◽  
Damien Jamon ◽  
Emmanuel Marin ◽  
Sophie Neveu ◽  
...  

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