scholarly journals Synthesis, transport properties and electronic structure of p-type Cu1+xMn2−xInTe4 (x = 0, 0.2, 0.3)

2020 ◽  
Vol 49 (7) ◽  
pp. 2273-2279 ◽  
Author(s):  
Dean Hobbis ◽  
Wencong Shi ◽  
Adrian Popescu ◽  
Kaya Wei ◽  
Ryan E. Baumbach ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Transport Properties ◽  
Temperature Dependent ◽  
Dependent Transport ◽  
P Type ◽  
First Time

The synthesis, electronic structure and temperature dependent transport properties of polycrystalline Cu1+xMn2−xInTe4 (x = 0, 0.2, 0.3) are reported for the first time.

ELECTRONIC AND TRANSPORT PROPERTIES OF THERMOELECTRIC Ru2Si3

2013 ◽  
Vol 06 (05) ◽  
pp. 1340013 ◽  
Author(s):  
DAVID J. SINGH ◽  
DAVID PARKER
Keyword(s):  
Electronic Structure ◽  
Transport Properties ◽  
First Principles ◽  
Doping Level ◽  
Transport Theory ◽  
Boltzmann Transport ◽  
Temperature Dependent ◽  
Boltzmann Transport Theory ◽  
P Type

We report calculations of the doping and temperature dependent thermopower of Ru 2 Si 3 based on Boltzmann transport theory and the first principles electronic structure. We find that the performance reported to date can be significantly improved by optimization of the doping level and that ultimately n-type should have higher ZT than p-type.

Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP

2000 ◽  
Vol 87 (3) ◽  
pp. 1350-1355 ◽  
Author(s):  
V. Gopal ◽  
Victor Souw ◽  
E.-H. Chen ◽  
E. P. Kvam ◽  
M. McElfresh ◽  
...  
Keyword(s):  
Transport Properties ◽  
Temperature Dependent ◽  
Dependent Transport

Ferromagnetic and Paramagnetic Semiconductors Based upon GaN, AlGaN, and GaP

2001 ◽  
Vol 690 ◽  
Author(s):  
Mark E. Overberg ◽  
Gerald T. Thaler ◽  
Rachel M. Frazier ◽  
Brent P. Gila ◽  
Cammy R. Abernathy ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hysteretic Behavior ◽  
Ferromagnetic Semiconductors ◽  
Temperature Dependent ◽  
Paramagnetic Behavior ◽  
Gas Source ◽  
P Type ◽  
First Time ◽  
Temperature Dependent Magnetization

ABSTRACTEpitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4% Mn are found to be p-type with hysteretic behavior to room temperature. GaMnN films grown at 700 °C with 2.8% Mn show hysteresis at 300 K, while temperature-dependent magnetization measurements indicate that the magnetism may persist to much higher temperatures (> 325 K). Samples of AlGaMnN have also been prepared for the first time that show improved surface morphology compared to GaMnN but which show only paramagnetic behavior.

Temperature-Dependent Transport Properties of a Redox-Active Ionic Liquid with a Viologen Group

2015 ◽  
Vol 119 (2) ◽  
pp. 1067-1077 ◽  
Author(s):  
Nataraju Bodappa ◽  
Peter Broekmann ◽  
Yong-Chun Fu ◽  
Julien Furrer ◽  
Yutaro Furue ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Transport Properties ◽  
Temperature Dependent ◽  
Redox Active ◽  
Dependent Transport

Temperature‐dependent transport properties ofn+GaAs/low‐temperature GaAs/n+GaAs structures grown by molecular beam epitaxy

1996 ◽  
Vol 79 (11) ◽  
pp. 8488-8492 ◽  
Author(s):  
Jenn‐Fang Chen ◽  
Nie‐Chuan Chen ◽  
Shih‐Yang Chiu ◽  
Pie‐yong Wang ◽  
Wei‐I Lee ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Transport Properties ◽  
Molecular Beam ◽  
Temperature Dependent ◽  
Dependent Transport ◽  
Low Temperature Gaas

scholarly journals Temperature-dependent transport properties of FeRh

2017 ◽  
Vol 95 (15) ◽  
Author(s):  
S. Mankovsky ◽  
S. Polesya ◽  
K. Chadova ◽  
H. Ebert ◽  
J. B. Staunton ◽  
...  
Keyword(s):  
Transport Properties ◽  
Temperature Dependent ◽  
Dependent Transport
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