Metal synergistic effect on cluster optical properties: based on Ag25 series nanoclusters

2019 ◽  
Vol 48 (35) ◽  
pp. 13190-13196 ◽  
Author(s):  
Qianqin Yuan ◽  
Xi Kang ◽  
Daqiao Hu ◽  
Chenwanli Qin ◽  
Shuxin Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Synergistic Effect ◽  
Free Valence ◽  
Valence Electrons ◽  
Pl Intensity

We found that the PL intensity of Ag series nanocluster could be controlled by the contraction/expansion of the free valence electrons.

Total structural determination of [Au1Ag24(Dppm)3(SR)17]2+ comprising an open icosahedral Au1Ag12 core with six free valence electrons

2019 ◽  
Vol 55 (45) ◽  
pp. 6457-6460 ◽  
Author(s):  
Yangfeng Li ◽  
Manman Zhou ◽  
Shan Jin ◽  
Lin Xiong ◽  
Qianqin Yuan ◽  
...  
Keyword(s):  
Free Valence ◽  
Structural Determination ◽  
Valence Electrons

Herein, we report the first silver-rich nanocluster containing an open icosahedral Au1Ag12 core.

Nanocomposite Coatings - Applications and Properties

2001 ◽  
Vol 703 ◽  
Author(s):  
Roger H. Cayton ◽  
R. W. Brotzman
Keyword(s):  
Optical Properties ◽  
Synergistic Effect ◽  
Nanocomposite Coatings ◽  
Polymer Systems ◽  
Aqueous Polymer ◽  
Coating Hardness

ABSTRACTNanocomposite coatings were made by incorporating nano-sized and micron-sized alumina into aqueous and non-aqueous polymer systems. At approximately 50wt% nano-sized alumina a synergistic effect was observed in coating hardness with no degradation in optical properties.

Synergistic effect of V/N codoping by ion implantation on the electronic and optical properties of TiO2

2014 ◽  
Vol 115 (14) ◽  
pp. 143106 ◽  
Author(s):  
Jinxia Xu ◽  
Chi Chen ◽  
Xiangheng Xiao ◽  
Lei Liao ◽  
Ling Miao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Synergistic Effect ◽  
Ion Implantation ◽  
Electronic And Optical Properties

Photoluminescence of Erbium Implanted in SiGe

1996 ◽  
Vol 422 ◽  
Author(s):  
S. J. Chang ◽  
D. K. Nayak ◽  
Y Shiraki
Keyword(s):  
Activation Energy ◽  
Optical Properties ◽  
High Temperatures ◽  
Room Temperature ◽  
Luminescence Centers ◽  
Pl Intensity ◽  
Er Doped

The optical properties of an Er-implanted SiGe sample have been studied Sharp and temperature-stable Er-related PL peaks were observed at around 1.5pm, which correspond to the Er 4I13/2 to 4I15/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Errelated PL signal can still be observed at room temperature. For a Si0.87Ge0.13:Er sample annealed at 850°C for 20 min, the activation energy is 130 meVwhich is slightly smaller than that of the Er-doped Si.

Structural and optical properties of AlInAs/InP and GaPSb/InP type II interfaces

1996 ◽  
Vol 74 (5-6) ◽  
pp. 202-208 ◽  
Author(s):  
M. Sacilotti ◽  
P. Abraham ◽  
M. Pitaval ◽  
M. Ambri ◽  
T. Benyattou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Optoelectronic Device ◽  
Conduction Band Edge ◽  
Type Ii ◽  
Semiconducting Materials ◽  
Band Bending ◽  
Device Applications ◽  
Pl Intensity ◽  
Material Forming

We present a study of type II interfaces between semiconducting materials. In this type of interface the lineup of the two semiconductor band gaps has a staggered shape. The band bending at the interface depends on the doping type and concentration of the two semiconductors involved. In most cases two triangular quantum wells appear at the interface, one for the electrons in the semiconductor having the lowest conduction band edge and one in the other material for holes. In such a case, when charges are injected, the electrons and holes are separated at the interface, so that the electron/hole recombination occurs through the interface. The main characteristic of type II interfaces is that their photoluminescent (PL) intensity is very high compared with each material forming the heterojunction. This high PL intensity can be used advantageously in optoelectronic device applications. We present semiconductor pairs for which it is possible to have type II interfaces and their optical properties. We will emphasize particularly the cases of AlInAs/InP and GaPSb/InP whose low-temperature interface recombination energies are 1.2 and 0.90 eV, respectively.

scholarly journals Исследование влияния переходного слоя нанопористого кремния на атомное и электронное строение, а также оптические свойства гетероструктур A-=SUP=-III-=/SUP=-N/por-Si, выращенных методом плазменно-активированной молекулярно-пучковой эпитаксии

2019 ◽  
Vol 53 (7) ◽  
pp. 1010
Author(s):  
П.В. Середин ◽  
А.С. Леньшин ◽  
Д.С. Золотухин ◽  
Д.Л. Голощапов ◽  
А.М. Мизеров ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Structural Properties ◽  
Molecular Beam ◽  
Diameter Distribution ◽  
Structure Morphology ◽  
Nanoporous Si ◽  
Pl Intensity

This paper reports on influence of the nanoporous Si buffer layer on morphological, physical and structural properties of the InxGa1-xN layer with nanocolumnar morphology of the surface, grown by plasma assisted molecular beam epitaxy on the traditional Si(111) substrates. By means of various structural and spectroscopy methods electronic structure, morphology of the surface and optical properties of grown heterostructures was studied. We showed that usage of por-Si ad-layer helps to achieve more isotropic InGaN nanocolumns diameter distribution as well as to increase PL intensity up to 25%.

Optical Properties of Al0.70Ga0.30As:Er,Yb

2002 ◽  
Vol 744 ◽  
Author(s):  
Shin-ichiro Uekusa ◽  
Isao Tanaka ◽  
Tomoyuki. Arai
Keyword(s):  
Optical Properties ◽  
Excited State ◽  
Ground State ◽  
Thermal Quenching ◽  
Transfer Energy ◽  
Energy Transfers ◽  
First Excited State ◽  
Pl Intensity ◽  
Optical Sensitization ◽  
Dominant Peak

ABSTRACTErbium (Er) ions were co-implanted with ytterbium (Yb) into Al0.70Ga0.30As substrates and we realized an increase in the intensity of Er intra-4f-shell luminescence. The photoluminescence (PL) intensity of Er-related dominant peak (1538.2nm) was enhanced by co-implanted Yb. The thermal quenching was improved. PL intensity of Yb-related emission was decreased. We studied the transfer energy and the optical sensitization of Yb ions co-implanted with Er ions in Al0.70Ga0.30As. Energy transfers from 2F5/2 (the first excited state) → 2F7/2 (the ground state) of Yb3+ to 4I13/2 (the first excited state) → 4I15/2 (the ground state) of Er3+ were observed by PL excitation (PLE) and selectively excited PL (SPL).

Lone pair electron effect induced differences in linear and nonlinear optical properties of bismuth borates

2020 ◽  
Vol 44 (4) ◽  
pp. 1228-1235
Author(s):  
Wenbing Cai ◽  
Qun Jing ◽  
Jun Zhang
Keyword(s):  
Optical Properties ◽  
Synergistic Effect ◽  
Nonlinear Optical ◽  
Lone Pair ◽  
Nonlinear Optical Properties ◽  
Electron Effect ◽  
Lone Pair Electron ◽  
Linear And Nonlinear ◽  
Oxygen Groups ◽  
Bismuth Borates

We analyzed systematically each phase of BIBO, and we found that the synergistic effect between bismuth oxygen polyhedra and boron–oxygen groups codetermines the optical properties of BIBO.

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