Introducing novel electronic and magnetic properties in C3N nanosheets by defect engineering and atom substitution
2019 ◽
Vol 21
(37)
◽
pp. 21070-21083
◽
Keyword(s):
Using first-principles calculations the effects of topological defects, vacancies, Stone–Wales and anti-site and substitution of atoms, on the structure and electronic properties of monolayer C3N are investigated.
2018 ◽
Vol 32
(31)
◽
pp. 1850348
2020 ◽
Vol 22
(4)
◽
pp. 2498-2508
◽
2019 ◽
Vol 21
(36)
◽
pp. 20132-20136
◽
2013 ◽
Vol 68
◽
pp. 127-131
◽
2017 ◽
Vol 19
(23)
◽
pp. 15021-15029
◽