Hydrogen interaction with a sulfur-vacancy-induced occupied defect state in the electronic band structure of MoS2

2019 ◽  
Vol 21 (28) ◽  
pp. 15302-15309 ◽  
Author(s):  
Sang Wook Han ◽  
Gi-Beom Cha ◽  
Kyoo Kim ◽  
Soon Cheol Hong
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Photoemission Spectroscopy ◽  
Defect State ◽  
Defect States ◽  
High Concentration ◽  
Sulfur Vacancy ◽  
Electronic Band ◽  
Hydrogen Interaction ◽  
Combination Study

A combination study of photoemission spectroscopy and first-principles calculations reveals that a sufficiently high concentration (2.8–11.1%) of the VS defect on the MoS2 surface induces an occupied defect state in the electronic band structure, in addition to the in-gap defect states.

Unoccupied electronic band structure of pentagonal Si nanoribbons on Ag(110)

2019 ◽  
Vol 21 (32) ◽  
pp. 17811-17820 ◽  
Author(s):  
Nils Fabian Kleimeier ◽  
Gabi Wenzel ◽  
Adrian Joe Urban ◽  
Mohamed Rachid Tchalala ◽  
Hamid Oughaddou ◽  
...  
Keyword(s):  
Band Structure ◽  
Dft Calculations ◽  
Electronic Band Structure ◽  
Photoemission Spectroscopy ◽  
Electronic Band ◽  
Inverse Photoemission ◽  
Inverse Photoemission Spectroscopy

The unoccupied band structure of silicon nanoribbons on Ag(110) was investigated using k-resolved inverse photoemission spectroscopy and DFT calculations.

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