Electronic transport properties and magnetoresistance in the Fe3O4/SiO2/p-Si heterostructure with an in-plane current geometry

2019 ◽  
Vol 21 (14) ◽  
pp. 7518-7523 ◽  
Author(s):  
Xiang Liu ◽  
Wenbo Mi
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Electronic Transport Properties ◽  
Spin Dependent Transport ◽  
Dependent Transport

Spin-dependent transport of electrons in p-Si amplifies the MR of the heterostructure due to spin extraction from Fe3O4 below 190 K.

Control of electronic transport in nanohole defective zigzag graphene nanoribbon by means of side alkene chain

RSC Advances ◽  
2015 ◽  
Vol 5 (25) ◽  
pp. 19152-19158 ◽  
Author(s):  
Yun Zou ◽  
Mengqiu Long ◽  
Mingjun Li ◽  
Xiaojiao Zhang ◽  
Qingtian Zhang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Graphene Nanoribbon ◽  
Spin Dependent Transport ◽  
Dependent Transport

Spin-dependent transport properties can be modulated by the parity of the side alkene chain in defective ZGNR junctions.

Spin-dependent transport properties of zigzag phosphorene nanoribbons with oxygen-saturated edges

2017 ◽  
Vol 19 (37) ◽  
pp. 25319-25323 ◽  
Author(s):  
Mavlanjan Rahman ◽  
Ke-chao Zhou ◽  
Qing-lin Xia ◽  
Yao-zhuang Nie ◽  
Guang-hua Guo
Keyword(s):  
Density Functional Theory ◽  
Transport Properties ◽  
Electronic Transport ◽  
Electronic Structures ◽  
Density Functional ◽  
Function Method ◽  
Functional Theory ◽  
Spin Dependent Transport ◽  
Spin Polarized ◽  
Dependent Transport

We investigate the electronic structures and electronic transport properties of zigzag phosphorene nanoribbons with oxygen-saturated edges (O-zPNRs) by using the spin-polarized density functional theory and the nonequilibrium Green's function method.

ELECTRONIC TRANSPORT PROPERTIES OF SILICON NANOWIRE CAGE

2018 ◽  
Author(s):  
Shenqiu Mo ◽  
Dengke Ma ◽  
Lina Yang ◽  
Meng An ◽  
Zhiyu Liu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Silicon Nanowire ◽  
Electronic Transport Properties

scholarly journals Strain Investigation on Spin-Dependent Transport Properties of γ-Graphyne Nanoribbon Between Gold Electrodes

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yun Li ◽  
Xiaobo Li ◽  
Shidong Zhang ◽  
Liemao Cao ◽  
Fangping Ouyang ◽  
...  
Keyword(s):  
Transport Properties ◽  
High Performance ◽  
Density Functional ◽  
Strain Engineering ◽  
Molecular Junctions ◽  
Spin Splitting ◽  
Functional Theory ◽  
Spin Dependent Transport ◽  
The Density Functional Theory ◽  
Dependent Transport

AbstractStrain engineering has become one of the effective methods to tune the electronic structures of materials, which can be introduced into the molecular junction to induce some unique physical effects. The various γ-graphyne nanoribbons (γ-GYNRs) embedded between gold (Au) electrodes with strain controlling have been designed, involving the calculation of the spin-dependent transport properties by employing the density functional theory. Our calculated results exhibit that the presence of strain has a great effect on transport properties of molecular junctions, which can obviously enhance the coupling between the γ-GYNR and Au electrodes. We find that the current flowing through the strained nanojunction is larger than that of the unstrained one. What is more, the length and strained shape of the γ-GYNR serves as the important factors which affect the transport properties of molecular junctions. Simultaneously, the phenomenon of spin-splitting occurs after introducing strain into nanojunction, implying that strain engineering may be a new means to regulate the electron spin. Our work can provide theoretical basis for designing of high performance graphyne-based devices in the future.

scholarly journals Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Yipeng An ◽  
Kun Wang ◽  
Shijing Gong ◽  
Yusheng Hou ◽  
Chunlan Ma ◽  
...  
Keyword(s):  
Transport Properties ◽  
Field Effect Transistors ◽  
First Principles Calculations ◽  
Next Generation ◽  
Strong Response ◽  
The Road ◽  
Spin Dependent Transport ◽  
2D Structure ◽  
Filtering Effect ◽  
Dependent Transport

AbstractTwo-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.

Improved thermoelectric transport properties of Ge4Se3Te through dimensionality reduction

2021 ◽  
Author(s):  
H. H. Huang ◽  
Xiaofeng Fan ◽  
Wei Tao Zheng ◽  
David J. Singh
Keyword(s):  
Dimensionality Reduction ◽  
Transport Properties ◽  
Electronic Transport ◽  
Thermoelectric Transport ◽  
Electronic Transport Properties ◽  
Thermoelectric Transport Properties

Layered semiconducting Ge4Se3Te shows unusual bonding that suggests the possibility of unusual transport that may be favorable for thermoelectrics. We investigated the electronic transport properties in relation to thermoelectricity of...

scholarly journals Effect of vacancy defects on the electronic transport properties of an Ag–ZnO–Pt sandwich structure

2021 ◽  
Vol 20 (2) ◽  
pp. 798-804
Author(s):  
G. R. Berdiyorov ◽  
F. Boltayev ◽  
G. Eshonqulov ◽  
H. Hamoudi
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Density Functional ◽  
Practical Importance ◽  
Functional Formalism ◽  
Vacancy Defects ◽  
Electronic Transport Properties ◽  
Charge Localization ◽  
Metal Insulator Metal ◽  
Current Rectification

AbstractThe effect of zinc and oxygen vacancy defects on the electronic transport properties of Ag(100)–ZnO(100)–Pt(100) sandwich structures is studied using density functional theory in combination with the nonequilibrium Green’s functional formalism. Defect-free systems show clear current rectification due to voltage dependent charge localization in the system as revealed in our transmission eigenstates analysis. Regardless of the location, oxygen vacancies result in enhanced current in the system, whereas Zn vacancy defects reduce the charge transport across the junction. The current rectification becomes less pronounced in the presence of both types of vacancy defects. Our findings can be of practical importance for developing metal-insulator-metal diodes.

Evolution of atomic structure and electronic transport properties in n-type Bi2Te3 films via Bi2 planar defects

2021 ◽  
Vol 118 (10) ◽  
pp. 103901
Author(s):  
Min Zhang ◽  
Wei Liu ◽  
Cheng Zhang ◽  
Sen Xie ◽  
Fuqiang Hua ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Atomic Structure ◽  
Planar Defects ◽  
Electronic Transport Properties
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