Bandgap trimming and optical properties of Si3N4:Al microbelt phosphors for warm white light-emitting diodes
Keyword(s):
The bandgap energy of Si3N4:Al is precisely and gradually tailored from 2.58 to 2.85 eV by increasing the Al concentration. Si3N4:Al:Eu phosphors exhibiting a yellow-orange emission are promising for solid-state warm white lighting under blue chip excitation.
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