Laser molecular beam epitaxy of vertically self-assembled GaN nanorods on Ta metal foil: role of growth temperature and laser repetition rate

CrystEngComm ◽  
2019 ◽  
Vol 21 (36) ◽  
pp. 5448-5454 ◽  
Author(s):  
Prashant Tyagi ◽  
Ch. Ramesh ◽  
B. S. Yadav ◽  
S. S. Kushvaha ◽  
M. Senthil Kumar

Self-aligned GaN nanorod assembly directly grown on metal foil substrates is very attractive for developing flexible devices.

2012 ◽  
Vol 112 (2) ◽  
pp. 023504 ◽  
Author(s):  
V.-M. Korpijärvi ◽  
A. Aho ◽  
P. Laukkanen ◽  
A. Tukiainen ◽  
A. Laakso ◽  
...  

2009 ◽  
Vol 311 (7) ◽  
pp. 2002-2005 ◽  
Author(s):  
Y. Cordier ◽  
N. Baron ◽  
S. Chenot ◽  
P. Vennéguès ◽  
O. Tottereau ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 2113-2122 ◽  
Author(s):  
Ch. Ramesh ◽  
P. Tyagi ◽  
J. Kaswan ◽  
B. S. Yadav ◽  
A. K. Shukla ◽  
...  

The effect of flexible Ti metal foil surface modification and laser repetition rate in laser molecular beam epitaxy growth process on the evolution of GaN nanorods and their structural, electronic and optical properties has been investigated.


Vacuum ◽  
2020 ◽  
Vol 181 ◽  
pp. 109643
Author(s):  
Ch. Ramesh ◽  
P. Tyagi ◽  
S. Gautam ◽  
A.K. Mauraya ◽  
S. Ojha ◽  
...  

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1032 ◽  
Author(s):  
Chodipilli Ramesh ◽  
Prashant Tyagi ◽  
Govind Gupta ◽  
Muthusamy Senthil Kumar ◽  
Sunil Singh Kushvaha

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