Dependence of the structure and orientation of VSS grown Si nanowires on an epitaxy process
We investigated the vapor–solid–solid growth of Si nanowires from Ni silicides on Si(111), Si(110), and GaN substrates.
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2018 ◽
Vol 448
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pp. 126-132
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2002 ◽
Vol 246
(1-2)
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pp. 64-68
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