Direct transmission electron microscopy observation of the oriented edge-attachment processes between single-layer graphene flakes

CrystEngComm ◽  
2019 ◽  
Vol 21 (27) ◽  
pp. 4042-4047
Author(s):  
Neng Wan ◽  
Zhiyong Shao ◽  
Xiaokang Zhao ◽  
Kang Xu
Keyword(s):  
Single Layer ◽  
Oriented Attachment ◽  
Single Layer Graphene ◽  
Direct Transmission ◽  
Microscopy Observation ◽  
Oriented Edge ◽  
Layer Graphene ◽  
Material Deposition ◽  
Transmission Electron ◽  
Graphene Flakes

Oriented attachment works on super-lubric surfaces, which could be helpful for 2-dimensional material deposition.

Simulation Study of Aberration-Corrected High-Resolution Transmission Electron Microscopy Imaging of Few-Layer-Graphene Stacking

2010 ◽  
Vol 16 (2) ◽  
pp. 194-199 ◽  
Author(s):  
Florence Nelson ◽  
Alain C. Diebold ◽  
Robert Hull
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Random Noise ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Microscopy Imaging ◽  
Layer Graphene ◽  
Transmission Electron ◽  
Aberration Corrected

AbstractGraphene is a single layer of carbon atoms arranged in a hexagonal lattice. The high carrier mobility and mechanical robustness of single layer graphene make it an attractive material for “beyond CMOS” devices. The current work investigates through high-resolution transmission electron microscopy (HRTEM) image simulation the sensitivity of aberration-corrected HRTEM to the different graphene stacking configurations AAA/ABA/ABC as well as bilayers with rotational misorientations between the individual layers. High-angle annular dark field–scanning transmission electron microscopy simulation is also explored. Images calculated using the multislice approximation show discernable differences between the stacking sequences when simulated with realistic operating parameters in the presence of low random noise.

scholarly journals Characterizing the maximum number of layers in chemically exfoliated graphene

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Péter Szirmai ◽  
Bence G. Márkus ◽  
Julio C. Chacón-Torres ◽  
Philipp Eckerlein ◽  
Konstantin Edelthalhammer ◽  
...  
Keyword(s):  
Single Layer ◽  
Vapour Phase ◽  
Single Layer Graphene ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Exfoliated Graphene ◽  
Upper Limit ◽  
Number Of Layers ◽  
Graphene Flakes ◽  
Few Layer Graphene

AbstractAn efficient route to synthesize macroscopic amounts of graphene is highly desired and bulk characterization of such samples, in terms of the number of layers, is equally important. We present a Raman spectroscopy-based method to determine the typical upper limit of the number of graphene layers in chemically exfoliated graphene. We utilize a controlled vapour-phase potassium intercalation technique and identify a lightly doped stage, where the Raman modes of undoped and doped few-layer graphene flakes coexist. The spectra can be unambiguously distinguished from alkali doped graphite, and modeling with the typical upper limit of the layers yields an upper limit of flake thickness of five layers with a significant single-layer graphene content. Complementary statistical AFM measurements on individual few-layer graphene flakes find a consistent distribution of the layer numbers.

scholarly journals Mapping of Graphene Oxide and Single Layer Graphene Flakes—Defects Annealing and Healing

2018 ◽  
Vol 5 ◽  
Author(s):  
Kyriaki Tsirka ◽  
Antigoni Katsiki ◽  
Nikolaos Chalmpes ◽  
Dimitrios Gournis ◽  
Alkiviadis S. Paipetis
Keyword(s):  
Graphene Oxide ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Graphene Flakes

Comparative study of electron transfer on various graphene-metallic contacts

2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Single Layer ◽  
Annealing Treatment ◽  
Single Layer Graphene ◽  
Strain Effect ◽  
Graphene Surface ◽  
Layer Graphene ◽  
Metallic Contacts ◽  
Nonuniform Strain ◽  
Main Factor

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.

scholarly journals Millisecond lattice gasification for high-density CO2- and O2-sieving nanopores in single-layer graphene

2021 ◽  
Vol 7 (9) ◽  
pp. eabf0116
Author(s):  
Shiqi Huang ◽  
Shaoxian Li ◽  
Luis Francisco Villalobos ◽  
Mostapha Dakhchoune ◽  
Marina Micari ◽  
...  
Keyword(s):  
Single Layer ◽  
High Density ◽  
Single Layer Graphene ◽  
Pore Density ◽  
Vacancy Defects ◽  
Carbon Gasification ◽  
Layer Graphene ◽  
Gas Molecules ◽  
Good Agreement

Etching single-layer graphene to incorporate a high pore density with sub-angstrom precision in molecular differentiation is critical to realize the promising high-flux separation of similar-sized gas molecules, e.g., CO2 from N2. However, rapid etching kinetics needed to achieve the high pore density is challenging to control for such precision. Here, we report a millisecond carbon gasification chemistry incorporating high density (>1012 cm−2) of functional oxygen clusters that then evolve in CO2-sieving vacancy defects under controlled and predictable gasification conditions. A statistical distribution of nanopore lattice isomers is observed, in good agreement with the theoretical solution to the isomer cataloging problem. The gasification technique is scalable, and a centimeter-scale membrane is demonstrated. Last, molecular cutoff could be adjusted by 0.1 Å by in situ expansion of the vacancy defects in an O2 atmosphere. Large CO2 and O2 permeances (>10,000 and 1000 GPU, respectively) are demonstrated accompanying attractive CO2/N2 and O2/N2 selectivities.

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