scholarly journals New generations of spirobifluorene regioisomers for organic electronics: tuning electronic properties with the substitution pattern

2019 ◽  
Vol 55 (95) ◽  
pp. 14238-14254 ◽  
Author(s):  
Cyril Poriel ◽  
Lambert Sicard ◽  
Joëlle Rault-Berthelot
Keyword(s):  
Electronic Properties ◽  
Organic Electronics ◽  
Device Performance ◽  
Substitution Pattern ◽  
Feature Article ◽  
Present Feature ◽  
Positional Isomerism ◽  
The Impact

In the present feature article, we present the new generations of spirobifluorenes for organic electronics and we detail the impact of positional isomerism on the electronic properties and device performance.

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

scholarly journals Modulating the Physical and Electronic Properties over Positional Isomerism: The Dispirofluorene-Dihydroindacenodithiophene (DSF-IDT) Family

2017 ◽  
Vol 23 (68) ◽  
pp. 17290-17303 ◽  
Author(s):  
Jean-David Peltier ◽  
Benoît Heinrich ◽  
Bertrand Donnio ◽  
Olivier Jeannin ◽  
Joëlle Rault-Berthelot ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Positional Isomerism

scholarly journals High Frequency Transformer for Ship Electrical Power System

2018 ◽  
Vol 9 (2) ◽  
pp. 347
Author(s):  
AnuPriya K R ◽  
Sasilatha T
Keyword(s):  
High Frequency ◽  
Output Voltage ◽  
Electrical Power ◽  
Device Performance ◽  
Electrical Power System ◽  
Matrix Converters ◽  
Electrical Device ◽  
Line Frequency ◽  
High Frequency Transformer ◽  
The Impact

The system represented during this paper uses 3 matrix converters and a high frequency electrical device to attain isolation and voltage transformation from primary to secondary aspect. Two matrix converters manufacture high frequency voltage across a transformer, with open all over primary. a 3rd matrix device converts the high frequency cut voltage to line frequency. The non-idealities like outflow inductance of the electrical device have a big impact on the device performance. This paper studies the impact of outflow inductance on the regulation of the output voltage of the device. The simulation study has been carried out in SIMULINK and also the results are presented.

Atomic structures and electronic properties of Ta-doped 2H-NbSe2

RSC Advances ◽  
2014 ◽  
Vol 4 (101) ◽  
pp. 57541-57546 ◽  
Author(s):  
Hongping Li ◽  
Shuai Liu ◽  
Lin Chen ◽  
Jun Wu ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
First Principles Calculations ◽  
Atomic Structures ◽  
The Impact ◽  
Ta Doping

First-principles calculations are conducted to investigate the impact of Ta doping on the atomistic structures and electronic properties of the technologically relevant 2H-NbSe2.

Modeling the Impact of Packaging Stress on Device Performance

2005 ◽  
Vol 863 ◽  
Author(s):  
Xiaopeng Xu ◽  
Victor Moroz
Keyword(s):  
Normal Stress ◽  
Mobility Model ◽  
External Pressure ◽  
Stress Pattern ◽  
Fabrication Process ◽  
Device Performance ◽  
Stress Evolution ◽  
Transistor Fabrication ◽  
The Impact ◽  
Additional Device

AbstractIn this study the stress evolution for the entire transistor fabrication process is simulated and the packaging stress is modeled as the external pressure/normal stress acting on the boundaries of the transistor unit cell. The impact on device performance from both the fabrication stress and the packaging stress is investigated using a classical piezo-resistance mobility model. The effect of the packaging stress on device mobility can be either beneficial or detrimental depending on whether the stress is tensile or compressive, on stress pattern, its magnitude, and the transistor type. The results suggest that utilizing both the fabrication stress and the packaging stress for stress engineering can lead to additional device performance enhancements.

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