Halide perovskites for resistive random-access memories

2019 ◽  
Vol 7 (18) ◽  
pp. 5226-5234 ◽  
Author(s):  
Hyojung Kim ◽  
Ji Su Han ◽  
Sun Gil Kim ◽  
Soo Young Kim ◽  
Ho Won Jang
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Storage Devices ◽  
New Class ◽  
Switching Material ◽  
Halide Perovskites ◽  
Halide Perovskite

Halide-perovskites-based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because the switching material—halide perovskite—has received considerable attention in recent years owing to its unique and exotic electrical, optical, and structural properties.

High performance perovskite memristor by integrating tip shape contact

2021 ◽  
Author(s):  
Su-Ting Han ◽  
Jiangming Chen ◽  
Zihao Feng ◽  
Mingtao Luo ◽  
Junjie Wang ◽  
...  
Keyword(s):  
Activation Energy ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Ion Migration ◽  
Halide Perovskite

Resistive random access memory (RRAM) based on hybrid organic-inorganic halide perovskite (HOIP) has recently gained significant interests due to its low activation energy of ion migration. HOIP RRAM has been...

scholarly journals Recent advances in resistive random access memory based on lead halide perovskite

InfoMat ◽  
2020 ◽  
Author(s):  
Jiayu Di ◽  
Jianhui Du ◽  
Zhenhua Lin ◽  
Shengzhong (Frank) Liu ◽  
Jianyong Ouyang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Recent Advances ◽  
Halide Perovskite ◽  
Lead Halide

scholarly journals Flexible Electronics: Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage (Small 3/2016)

Small ◽  
2016 ◽  
Vol 12 (3) ◽  
pp. 265-265 ◽  
Author(s):  
Su-Ting Han ◽  
Ye Zhou ◽  
Bo Chen ◽  
Chundong Wang ◽  
Li Zhou ◽  
...  
Keyword(s):  
Data Storage ◽  
Flexible Electronics ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Organic small molecule-based RRAM for data storage and neuromorphic computing

2020 ◽  
Vol 8 (37) ◽  
pp. 12714-12738 ◽  
Author(s):  
Boyuan Mu ◽  
Hsiao-Hsuan Hsu ◽  
Chi-Ching Kuo ◽  
Su-Ting Han ◽  
Ye Zhou
Keyword(s):  
Small Molecules ◽  
Data Storage ◽  
Small Molecule ◽  
State Of The Art ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Neuromorphic Computing

Recent state-of-the-art developments related to organic small molecules for resistive random-access memory devices has been emphasized.

Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage

Small ◽  
2015 ◽  
Vol 12 (3) ◽  
pp. 390-396 ◽  
Author(s):  
Su-Ting Han ◽  
Ye Zhou ◽  
Bo Chen ◽  
Chundong Wang ◽  
Li Zhou ◽  
...  
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Broadband photoelectric tunable quantum dot based resistive random access memory

2020 ◽  
Vol 8 (6) ◽  
pp. 2178-2185 ◽  
Author(s):  
Zhiliang Chen ◽  
Yu Yu ◽  
Lufan Jin ◽  
Yifan Li ◽  
Qingyan Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Multilevel Data ◽  
Access Memory ◽  
Storage Ability

Ultra-stable broadband photoelectric tunable PbS QD based RRAM device with flexibility and multilevel data storage ability was demonstrated.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature
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