Pulsed-light surface annealing for low contact resistance interfaces between metal electrodes and bismuth telluride thermoelectric materials

2019 ◽  
Vol 7 (3) ◽  
pp. 479-483 ◽  
Author(s):  
Giri Joshi ◽  
Dan Mitchell ◽  
Josh Ruedin ◽  
Kyle Hoover ◽  
Rey Guzman ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Bismuth Telluride ◽  
Thermoelectric Materials ◽  
Annealing Process ◽  
Pulsed Light ◽  
Thermoelectric Devices ◽  
Metal Electrodes ◽  
Light Surface ◽  
Surface Annealing

The pulsed light annealing process improves the efficiency of bismuth telluride based thermoelectric devices by reducing the contact resistance significantly.

Progress on Mg2Si Thermoelectric Materials

2014 ◽  
Vol 886 ◽  
pp. 71-74 ◽  
Author(s):  
Xiao Dong Luo ◽  
Hao Liu ◽  
Wen Lin Xu ◽  
Yong Xiang Zhu
Keyword(s):  
Thermoelectric Materials ◽  
Potential Application ◽  
Research Progress ◽  
Preparation Technique ◽  
Thermoelectric Devices ◽  
Existing Problems ◽  
Basic Performance ◽  
The Future

Mg2Si which is composed of less toxic and naturally abundant elements,has attracted more attention for its potential application to thermoelectric devices. In this paper, the basic performance and preparation technique of Mg2Si thermoelectric materials are introduced. reviewed the current research progress of Mg2Si thermoelectricity. And the paper points out the existing problems and the trend of study in the future.

Thermoelectric Characteristics of Ultrathin Ag2Se Films with Durability Against Mechanical Stress

2021 ◽  
Vol 21 (8) ◽  
pp. 4462-4465
Author(s):  
Taeho Park ◽  
Kyoungah Cho ◽  
Seunggen Yang ◽  
Sangsig Kim
Keyword(s):  
Thin Films ◽  
Mechanical Stress ◽  
Temperature Difference ◽  
Thermoelectric Materials ◽  
Spin Coating ◽  
Mechanical Strain ◽  
Channel Length ◽  
Thermoelectric Devices ◽  
Seebeck Voltage

In this study, we investigated thermoelectric materials with durability against mechanical stress using Ag2Se nanoparticle (NP) thin films and colorless polyimide (CPI) substrates. Ag2Se NP thin films and CPI substrates were produced by spin-coating, and their thicknesses were 40 nm and 15 μm, respectively. A bendable thermoelectric film with a channel length of 40 μm and a channel area of 1.6 μm2 generated a Seebeck voltage of 1.43 mV at a temperature difference of 4.5 K. Owing to the thickness of the extremely thin thermoelectric film and substrate, the mechanical strain was only 0.15% even when the thermoelectric devices were bent with a curvature of 3 mm. Therefore, it was determined that the bendable thermoelectric film was robust against mechanical stress.

Advanced Thermoelectric Materials and Systems for Automotive Applications in the Next Millennium

1997 ◽  
Vol 478 ◽  
Author(s):  
Donald T. Morelli
Keyword(s):  
Environmental Economic ◽  
Physical Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Experimental Results ◽  
Automotive Applications ◽  
New Materials ◽  
Thermoelectric Devices ◽  
Filled Skutterudites ◽  
Fundamental Physical

AbstractA combination of environmental, economic, and technological drivers has led to a reassessment of the potential for using thermoelectric devices in several automotive applications. In order for this technology to achieve its ultimate potential, new materials with enhanced thermoelectric properties are required. Experimental results on the fundamental physical properties of some new thermoelectric materials, including filled skutterudites and 1–1–1 intermetallic semiconductors, are presented.

Progress in the development of segmented thermoelectric unicouples at the Jet Propulsion Laboratory

2000 ◽  
Vol 626 ◽  
Author(s):  
T. Caillat ◽  
J.-P. Fleurial ◽  
G. J. Snyder ◽  
A. Borshchevsky
Keyword(s):  
Contact Resistance ◽  
Thermoelectric Materials ◽  
State Of The Art ◽  
Jet Propulsion ◽  
Electrical Efficiency ◽  
Figures Of Merit ◽  
Novel Materials ◽  
Metallic Interconnects ◽  
Jet Propulsion Laboratory

ABSTRACTA new version of a segmented thermoelectric unicouple incorporating advanced thermoelectric materials with superior thermoelectric figures of merit has been recently proposed and is currently under development at the Jet Propulsion Laboratory (JPL). This advanced segmented thermoelectric unicouple includes a combination of state-of-the-art thermoelectric materials based on Bi2Te3 and novel materials developed at JPL. The segmented unicouple currently being developed is expected to operate between 300 and about 975K with a projected thermal to electrical efficiency of up to 15%. The segmentation can be adjusted to accommodate various hot-side temperatures depending on the specific application envisioned. Techniques and materials have been developed to bond the different thermoelectric segments together for the nand p-legs and low contact resistance bonds have been achieved. In order to experimentally determine the thermal to electrical efficiency of the unicouple, metallic interconnects must be developed for the hot side of the thermocouple to connect the n- and p-legs electrically. The latest results in the development of these interconnects are described in this paper. Efforts are also focusing on the fabrication of a unicouple specifically designed for thermal and electrical testing.

Highly efficient functional GexPb1−xTe based thermoelectric alloys

2014 ◽  
Vol 16 (37) ◽  
pp. 20120-20126 ◽  
Author(s):  
Yaniv Gelbstein ◽  
Joseph Davidow
Keyword(s):  
Energy Conversion ◽  
Fuel Consumption ◽  
Conversion Efficiency ◽  
Thermoelectric Materials ◽  
Waste Heat ◽  
Electrical Power ◽  
Electrical Energy ◽  
Energy Conversion Efficiency ◽  
Efficient Implementation ◽  
Thermoelectric Devices

Methods for enhancement of the direct thermal to electrical energy conversion efficiency, upon development of advanced thermoelectric materials, are constantly investigated mainly for an efficient implementation of thermoelectric devices in automotive vehicles, for utilizing the waste heat generated in such engines into useful electrical power and thereby reduction of the fuel consumption and CO2 emission levels.

Characterization of Contact Resistance between Carbon Nanotubes Film and Metal Electrodes

2013 ◽  
Vol 683 ◽  
pp. 238-241
Author(s):  
Ki Bong Han ◽  
Yong Ho Choi
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Contact Resistance ◽  
Chemical Properties ◽  
Metal Electrode ◽  
Metal Contacts ◽  
Metal Electrodes ◽  
3 Dimensional ◽  
Current Path ◽  
Classical Technique

Carbon nanotube has attracted great research attentions due to its outstanding electrical, physical, mechanical, chemical properties. Based on its excellent properties, the carbon nanotube is promising nanoscale material for novel electrical, mechanical, chemical, and biological devices and sensors. However, it is very difficult to control the structure of carbon nanotube during synthesis. A carbon nanotubes film has 3 dimensional structures of interwoven carbon nanotubes as well as unique properties such as transparency, flexibility and good electrical conductivity. More importantly, the properties of carbon nanotubes are ensemble averaged in this formation. In this research, we study the contact resistance between carbon nanotubes film and metal electrode. For most of electrical devices using carbon nanotubes film, it is necessary to have metal electrodes on the film for current path. A resistance at the contact lowers the electrical efficiencies of the devices. Therefore, it is important to measure and characterize the contact resistance and lower it for better efficiencies. The device demonstrated in this study using classical technique for metal contacts provides relatively reliable contact resistance measurements for carbon nanotubes film applications.

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