High-temperature tolerance of the piezoresistive effect in p-4H-SiC for harsh environment sensing
2018 ◽
Vol 6
(32)
◽
pp. 8613-8617
◽
Keyword(s):
4H-silicon carbide based sensors are promising candidates for replacing prevalent silicon-based counterparts in harsh environments owing to their superior chemical inertness, high stability and reliability.
Keyword(s):
2011 ◽
Vol 13
(3)
◽
pp. 333-340
◽
2019 ◽
Vol 4
(8)
◽
pp. 1393-1399
◽