scholarly journals Use of the time constant related parameter fmax to calculate the activation energy of bulk conduction in ferroelectrics

2018 ◽  
Vol 6 (34) ◽  
pp. 9258-9268 ◽  
Author(s):  
F. Yang ◽  
L. Li ◽  
P. Wu ◽  
E. Pradal-Velázquez ◽  
H. K. Pearce ◽  
...  
Keyword(s):  
Activation Energy ◽  
Time Constant ◽  
Electrical Conduction ◽  
Ferroelectric Materials ◽  
Related Parameter ◽  
Use Of Time ◽  
Conduction Mechanisms

The use of time constant related parameter fmax to obtain the activation energy for bulk electrical conduction (and any discussion of the possible conduction mechanisms) in ferroelectric materials should be used with caution.

ELECTRICAL CONDUCTION IN SUBSTITUTED Li-FERRITES PREPARED BY MICROWAVE PROCESSING

2005 ◽  
Vol 19 (21) ◽  
pp. 1051-1055 ◽  
Author(s):  
MAMATA MAISNAM ◽  
SUMITRA PHANJOUBAM ◽  
H. N. K. SARMA ◽  
CHANDRA PRAKASH ◽  
L. RADHAPIYARI DEVI ◽  
...  
Keyword(s):  
Activation Energy ◽  
Lattice Constant ◽  
Electrical Conduction ◽  
Spinel Structure ◽  
Single Phase ◽  
Microwave Sintering ◽  
Microwave Processing ◽  
Conventional Sintering

Samples with representative formula Li 0.45 Ni 0.1 Mn 0.1 Fe 2.35 O 4 have been sintered by conventional sintering technique and microwave sintering technique. Both the samples showed single-phase with spinel structure. The lattice constant for the microwave sintered (MS) sample showed a lower value than the conventionally sintered (CS) sample. The density of the MS sample has been found to be higher than the CS sample. And MS sample showed a higher value of resistivity and activation energy compared to the CS sample. The possible mechanisms are discussed.

Optimization and modulation for the moderate and high temperature thermoelectric properties of PbSe via solid solution with PbS synthesized by HPHT

2020 ◽  
Vol 34 (17) ◽  
pp. 2050185 ◽  
Author(s):  
Baomin Liu ◽  
Hongan Ma ◽  
Qi Chen ◽  
Yao Wang ◽  
Guangyao Ji ◽  
...  
Keyword(s):  
Activation Energy ◽  
Solid Solution ◽  
Electrical Conduction ◽  
Figure Of Merit ◽  
Solution Treatment ◽  
Conduction Type ◽  
Base Materials ◽  
Solid Solution Treatment ◽  
Electron Microscopes ◽  
Synthesis Stage

PbS synthesized at the same condition with PbSe exhibits an opposite electrical conduction type from it. Via the solid solution of PbS into PbSe, we attempt to change the major carries kind of PbSe-base materials and improve the thermoelectric (TE) property of synthesis samples in corresponding temperature areas. Introduction of high pressure into the synthesis stage could reduce the reactive activation energy and improve the synthesis efficiency. Characterizations via the electron microscopes demonstrate that synthesis samples are made of multiscale grains. Finally, characterizations on the thermoelectrical properties of [Formula: see text] demonstrate that the solid solution treatment could modulate the electrical conduction type and the figure of merit effectively.

Substitution induced magnetic phase transitions and related electrical conduction mechanisms in LaFeO3 nanoparticle

2019 ◽  
Vol 126 (6) ◽  
pp. 064104 ◽  
Author(s):  
T. Lakshmana Rao ◽  
M. K. Pradhan ◽  
U. K. Goutam ◽  
V. Siruguri ◽  
V. R. Reddy ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Electrical Conduction ◽  
Magnetic Phase ◽  
Magnetic Phase Transitions ◽  
Conduction Mechanisms ◽  
Electrical Conduction Mechanisms

scholarly journals Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics

2020 ◽  
Vol 80 (10) ◽  
Author(s):  
S. Bhattarai ◽  
R. Panth ◽  
W.-Z. Wei ◽  
H. Mei ◽  
D.-M. Mei ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electrical Conduction ◽  
High Purity ◽  
Localization Length ◽  
Rare Event ◽  
Conduction Mechanisms ◽  
Ge Detector ◽  
Electrical Conduction Mechanisms ◽  
P Type ◽  
Surface Leakage

AbstractFor the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $$2.13^{-0.05}_{+0.07}\mathrm{{A}}^\circ $$ 2 . 13 + 0.07 - 0.05 A ∘ to $$5.07^{-0.83}_{+2.58}\mathrm{{A}}^\circ $$ 5 . 07 + 2.58 - 0.83 A ∘ , depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.

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