Room temperature colloidal synthesis of CsPbBr3 nanowires with tunable length, width and composition

2018 ◽  
Vol 6 (29) ◽  
pp. 7797-7802 ◽  
Author(s):  
Yi Liu ◽  
Mingrui Guo ◽  
Shun Dong ◽  
Xiuling Jiao ◽  
Ting Wang ◽  
...  

We developed a room temperature ligand-assisted colloidal method to synthesize single-crystalline CsPbBr3 nanowires (NWs) directly from precursor powders.

RSC Advances ◽  
2017 ◽  
Vol 7 (40) ◽  
pp. 24589-24593 ◽  
Author(s):  
Yike Liu ◽  
Yaqin Tang ◽  
Ying Zeng ◽  
Xun Luo ◽  
Jingyu Ran ◽  
...  

Single-crystalline Sb2Se3 nanowires have been synthesized by a hot-injection phosphine-free colloidal method and show excellent photoelectrochemical properties.


2021 ◽  
Author(s):  
◽  
Matt Cryer

<p>Colloidal semiconductor nanocrystals (NCs) with bandgaps less than 1 eV allow the development of mid wave infrared (MIR) sensitive detectors that exploit the benefits of colloidal materials, primarily bandgap selection and solution deposition. Additionally, the electrical behaviour of these films can be examined for characteristics that can increase the functionality of NC based detectors.  The production of devices that are designed to be competitive as ultra-low-cost, room temperature MIR detectors, operating with photonic, rather than thermal detection is detailed. The evolution of the colloidal synthesis, spray deposition methods, substrate materials and post deposition treatments used here lead to highly robust and high performing devices. These devices demonstrate a “colour” sensitivity down to 300 nm in the MIR (≈10 % of scale), with superior responsivities for this class of device, up to 0.9 AW⁻¹, and competitive specific detectivity up to 8 × 10⁹ Jones at 200 Hz and 300 K. Furthermore, these devices utilise a cheap and robust substrate material that allows operation after deformation up to 45 ° without degradation over many cycles. These devices offer a template for ultra-low-cost MIR detectors with performance that rivals microbolometers but with better measurement speed and spectral sensitivity. As such these devices showcase the key advantages of using colloidal NCs in MIR applications.  Planar and fully air processed thin film devices that demonstrate photo-induced memristive behaviour and can be used as a transistors, photode-tectors or memory devices are investigated. Following long term (60 h) air exposure, unpackaged NC films develop reliable memristive characteristics in tandem with temperature, gate and photoresponse. On/off ratios of more than 50 are achieved and the devices show long term stability, producing repeatable metrics over days of measurement. The on/off behaviour is shown to be dependent on previous charge flow and carrier density, implying memristive rather than switching behaviour. These observations are described within a long term trap filling model. This work represents an advance in the integration of NC films into electronic devices, which may lead to the development of multi-functional electronic components.  Building on the previous work the steps taken to move from a planar device, that works well in controlled conditions, to a multi-pixel sensor that can demonstrate MIR video imaging at room temperature in a noisy environment are shown. This is achieved with a 15 pixel detector that consists only of a polymer substrate and solution patterned NC pixels. This device can detect a 373 K object with the device at 298 K in a noisy environment. This performance is enabled by photogain at 5 V bias that reaches a maximum External Quantum Efficiency (EQE) of 1940 ± 290 % for a pixel with a 3.3 µm bandgap. Through the use of four separate bandgaps it is shown that “multicolour” thermal imaging systems can deliver another layer of information, on top of intensity, to the user. The behaviour of the system is examined under use and it is shown that the photoconductive device behaves as expected with regards to bias, and that trap enabled gain is sensitive to total incident flux, more than the spectral energy distribution of the target. Finally, it is shown that solution patterned QD fabrication methods can deliver electrical reproducibility between pixels that is sufficient to allow an imaging plane of multiple pixels.  The somewhat neglected tin chalcogenide semiconductor nanocrystals are investigated and inverse MIR detection at room temperature is demonstrated with planar, solution and airprocessed PbSnTe and SnTe QD devices. The detection mechanism is shown to be mediated by an interaction between MIR radiation and the vibrational stretches of adsorbed hydroxyl species at the oxdised NC surface. Devices are shown to possess mAW⁻¹ responsivity via a reduction in film conductance due to MIR radiation and, unlike classic MIR photoconductors, are unaffected by visible wavelengths. As such these devices offer the possibility of MIR thermal imaging that has an intrinsic solution to the blinding caused by higher energy light sources.  In summary, it is shown that semiconductor NCs with an all ambient fully solution processed deposition and ligand exchange procedure can be used to create simple, robust and cheap devices that are beginning to demonstrate metrics on par with current commercial thermal detector systems. It is also shown that these devices can under certain circumstances demonstrate novel behaviours that offer the prospects of enhanced or novel functionality.</p>


2008 ◽  
Vol 20 (13) ◽  
pp. 2628-2632 ◽  
Author(s):  
Dingsheng Wang ◽  
Chenhui Hao ◽  
Wen Zheng ◽  
Qing Peng ◽  
Taihong Wang ◽  
...  

2021 ◽  
Author(s):  
◽  
Matt Cryer

<p>Colloidal semiconductor nanocrystals (NCs) with bandgaps less than 1 eV allow the development of mid wave infrared (MIR) sensitive detectors that exploit the benefits of colloidal materials, primarily bandgap selection and solution deposition. Additionally, the electrical behaviour of these films can be examined for characteristics that can increase the functionality of NC based detectors.  The production of devices that are designed to be competitive as ultra-low-cost, room temperature MIR detectors, operating with photonic, rather than thermal detection is detailed. The evolution of the colloidal synthesis, spray deposition methods, substrate materials and post deposition treatments used here lead to highly robust and high performing devices. These devices demonstrate a “colour” sensitivity down to 300 nm in the MIR (≈10 % of scale), with superior responsivities for this class of device, up to 0.9 AW⁻¹, and competitive specific detectivity up to 8 × 10⁹ Jones at 200 Hz and 300 K. Furthermore, these devices utilise a cheap and robust substrate material that allows operation after deformation up to 45 ° without degradation over many cycles. These devices offer a template for ultra-low-cost MIR detectors with performance that rivals microbolometers but with better measurement speed and spectral sensitivity. As such these devices showcase the key advantages of using colloidal NCs in MIR applications.  Planar and fully air processed thin film devices that demonstrate photo-induced memristive behaviour and can be used as a transistors, photode-tectors or memory devices are investigated. Following long term (60 h) air exposure, unpackaged NC films develop reliable memristive characteristics in tandem with temperature, gate and photoresponse. On/off ratios of more than 50 are achieved and the devices show long term stability, producing repeatable metrics over days of measurement. The on/off behaviour is shown to be dependent on previous charge flow and carrier density, implying memristive rather than switching behaviour. These observations are described within a long term trap filling model. This work represents an advance in the integration of NC films into electronic devices, which may lead to the development of multi-functional electronic components.  Building on the previous work the steps taken to move from a planar device, that works well in controlled conditions, to a multi-pixel sensor that can demonstrate MIR video imaging at room temperature in a noisy environment are shown. This is achieved with a 15 pixel detector that consists only of a polymer substrate and solution patterned NC pixels. This device can detect a 373 K object with the device at 298 K in a noisy environment. This performance is enabled by photogain at 5 V bias that reaches a maximum External Quantum Efficiency (EQE) of 1940 ± 290 % for a pixel with a 3.3 µm bandgap. Through the use of four separate bandgaps it is shown that “multicolour” thermal imaging systems can deliver another layer of information, on top of intensity, to the user. The behaviour of the system is examined under use and it is shown that the photoconductive device behaves as expected with regards to bias, and that trap enabled gain is sensitive to total incident flux, more than the spectral energy distribution of the target. Finally, it is shown that solution patterned QD fabrication methods can deliver electrical reproducibility between pixels that is sufficient to allow an imaging plane of multiple pixels.  The somewhat neglected tin chalcogenide semiconductor nanocrystals are investigated and inverse MIR detection at room temperature is demonstrated with planar, solution and airprocessed PbSnTe and SnTe QD devices. The detection mechanism is shown to be mediated by an interaction between MIR radiation and the vibrational stretches of adsorbed hydroxyl species at the oxdised NC surface. Devices are shown to possess mAW⁻¹ responsivity via a reduction in film conductance due to MIR radiation and, unlike classic MIR photoconductors, are unaffected by visible wavelengths. As such these devices offer the possibility of MIR thermal imaging that has an intrinsic solution to the blinding caused by higher energy light sources.  In summary, it is shown that semiconductor NCs with an all ambient fully solution processed deposition and ligand exchange procedure can be used to create simple, robust and cheap devices that are beginning to demonstrate metrics on par with current commercial thermal detector systems. It is also shown that these devices can under certain circumstances demonstrate novel behaviours that offer the prospects of enhanced or novel functionality.</p>


2009 ◽  
Vol 9 (5) ◽  
pp. 2335-2340 ◽  
Author(s):  
Feng-Ru Fan ◽  
Adel Attia ◽  
Ujjal Kumar Sur ◽  
Jian-Bin Chen ◽  
Zhao-Xiong Xie ◽  
...  

2005 ◽  
Vol 44 (21) ◽  
pp. 7280-7282 ◽  
Author(s):  
Yong Hu ◽  
Jiafu Chen ◽  
Xuan Xue ◽  
Tanwei Li ◽  
Yi Xie

2019 ◽  
Vol 7 (6) ◽  
pp. 2529-2535 ◽  
Author(s):  
John Hong ◽  
Byung-Sung Kim ◽  
Seungmo Yang ◽  
A-Rang Jang ◽  
Young-Woo Lee ◽  
...  

One-dimensional Cu2S nanostructures via a facile and room-temperature sulfur activation for supercapacitors.


1988 ◽  
Vol 133 ◽  
Author(s):  
F. E. Heredia ◽  
D. P. Pope

ABSTRACTLow and high temperature tensile tests were performed on single crystals of pure Ni3Al and Ni3Al+B in order to determine the effect of B additions on the ductility and fracture behavior. Tests were carried out in air at a constant strain rate of 1.3 × 10−3 s−1. The orientations tested were [001] for which the yield stress in tension is always greater than in compression, and those for which the tension/compression asymmetry is zero ([T=C]) for each particular composition. At room temperature, the results show a positive effect of B additions on both the fracture stress and on the ductility. The ductility at 800K appears to decrease monotonically with B additions. The largest ductilities are found for [T=C] at room temperature where an improvement of about 26% (resolved strain) for an addition of 0.2 at% B was obtained. However, the most dramatic increase in ductility occurs for the [001] oriented samples at room temperature where a 55% improvement was measured over that of pure Ni3Al. Fracture surfaces show a combination of massive slip, some cleavage, and heavily dimpled areas. These observations show that B additions not only increase the ductility of polycrystalline Ni3Al, as has been previously observed by many investigators, but also that of the already-ductile single crystalline material, indicating that a “bulk effect” should be added to the grain boundary strengthening effect of B when explaining the improvement in ductility of polycrystalline Ni3Al due to B additions.


2012 ◽  
Vol 501 ◽  
pp. 169-175 ◽  
Author(s):  
Asam M.A. Abudalazez ◽  
Shah Rizal Kasim ◽  
Azlan B. Ariffin ◽  
Zainal Arifin Ahmad

Electrophoretically deposition of Biphasic calcium phosphate on 25 × 10 × 1.2 mm (length, width, and thickness) 316L stainless steel plates using ethanol as dispersing medium; It was achieved on the cathode with constant voltages 20, 30, 50, and 100 V during 20, 30, 60, 90 and 120 seconds, respectively. After deposition, the samples were dried at room temperature for 24 hours and deposition weight and thickness of the coatings were measured. The coated samples were sintered in a tube furnace at 800 °C for 1 h in an argon atmosphere. After the sintering, the surface morphology and structure and phase composition of the samples were studied by a scanning electron microscope (SEM), energy dispersive spectrometry (EDX) and phase purity of the coating material by X-ray diffraction.


2020 ◽  
Vol 107 ◽  
pp. 110130
Author(s):  
Cheng Tian ◽  
Shiqi Zhao ◽  
Tong Guo ◽  
Wanjin Xu ◽  
Yanping Li ◽  
...  

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