Thermoelectric properties of textured polycrystalline Na0.03Sn0.97Se enhanced by hot deformation

2018 ◽  
Vol 6 (46) ◽  
pp. 23730-23735 ◽  
Author(s):  
Shaojun Liang ◽  
Jingtao Xu ◽  
Jacques Guillaume Noudem ◽  
Hongxiang Wang ◽  
Xiaojian Tan ◽  
...  

The hot deformation process enhances the textured degree of ploycrystalline SnSe, leading to better electrical conductivity and a high power factor of 10.2 μW cm−1 K−2 at 823 K.

2014 ◽  
Vol 115 (3) ◽  
pp. 033709 ◽  
Author(s):  
M. Zervos ◽  
Z. Viskadourakis ◽  
G. Athanasopoulos ◽  
R. Flores ◽  
O. Conde ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (24) ◽  
pp. 14415-14421
Author(s):  
Changhoon Lee ◽  
Sujee Kim ◽  
Won-Joon Son ◽  
Ji-Hoon Shim ◽  
Myung-Hwan Whangbo

The ternary selenides A2Sb4Se8 (A = K, Rb, Cs) are predicted to be a high-performance n-type thermoelectric material, and the conformationally-flexible Sb–Se(2)–Se(2)–Sb bridges are crucial in determining the thermoelectric properties of A2Sb4Se8.


2013 ◽  
Vol 1558 ◽  
Author(s):  
Baozhu Wang ◽  
Bahadir Kucukgok ◽  
Qinyue He ◽  
Andrew G. Melton ◽  
Jacob Leach ◽  
...  

ABSTRACTIn this study, thermoelectric properties of bulk and epitaxy GaN with various doping concentration are investigated. Seebeck coefficients decreased with the increase of carrier concentration for both bulk and epitaxial GaN samples, and the Seebeck coefficients of epitaxial GaN samples are found to be larger than that of bulk GaN samples in the similar carrier density due to the higher dislocation scattering. For epitaxial samples, a high power factor of 4.72 × 10-4 W/m-K2 is observed. The power factors of the bulk GaN samples are in the range of from 0.315× 10-4W/m-K2 to 0.354× 10-4W/m-K2 due to the low Seebeck coefficients.


Author(s):  
Makoto Tachibana ◽  
Ahmad Rifqi Muchtar ◽  
Takao Mori

Abstract We report the thermal conductivity (κ) of perovskite Sr1−x(La0.5Na0.5)xTiO3 (0 ≤ x ≤ 1) and the thermoelectric properties of Nb-doped samples for x = 0.1 and 0.2. The κ of the solid solution shows a distinct minimum near the cubic-tetragonal phase boundary at x = 0.2, where the value becomes close to the minimum theoretical κ. Nb doping to x = 0.2 retains the high power factor found in Nb-doped SrTiO3, but also raises the κ to result in a thermoelectric figure of merit of 0.24 at 773 K.


Author(s):  
Л.Н. Лукьянова ◽  
И.В. Макаренко ◽  
О.А. Усов

Differential tunnel conductance of the interlayer van der Waals surface (0001) was investigated in n-Bi2-xSbxTe3-y-zSeySz multicomponent solid solutions at x = 0.2, y = z = 0.09, optimized for near room temperatures with a high power factor, and at x = 0.4, y = 0, z = 0.06 with optimal thermoelectric properties for low temperatures and a high Seebek coefficient. It is shown that the intensity of the fluctuations of the Dirac point energy, a shift the top of the valence band and presence of surface levels in the energy gap formed by impurity defects is determined with composition and thermoelectric properties of solid solutions. The contribution of the surface states of Dirac fermions increases in n-Bi1.8Sb0.2Te2.82Se0.09S0.09 solid solution with a high power factor due to significant decrease of the surface concentration near the charge neutrality point and the growth of fermion mobility.


2013 ◽  
Vol 210 (12) ◽  
pp. 2628-2637 ◽  
Author(s):  
E. M. Levin ◽  
R. Hanus ◽  
M. Hanson ◽  
W. E. Straszheim ◽  
K. Schmidt-Rohr

Science ◽  
2021 ◽  
pp. eabi8668
Author(s):  
Bingchao Qin ◽  
Dongyang Wang ◽  
Xixi Liu ◽  
Yongxin Qin ◽  
Jin-Feng Dong ◽  
...  

Thermoelectric materials transfer heat and electrical energy, being useful for power generation or cooling applications. Many of these materials have narrow bandgaps, especially for cooling applications where this property has been seen as particularly important for enhancing the thermoelectric properties. We developed SnSe crystals with a wide bandgap Eg ~ 33 kBT with attractive thermoelectric properties through Pb alloying. The momentum and energy multiband alignment promoted by Pb alloying resulted in an ultra-high power factor ~75 μWcm–1K–2 at 300 K, and a ZTave ~ 1.90. We show that a 31-pair thermoelectric device can produce a power generation efficiency ~4.4% and a cooling ΔTmax ~ 45.7 K. These results demonstrate that wide bandgap compounds can be used for thermoelectric cooling applications.


2021 ◽  
pp. 2150290
Author(s):  
Nasir Shehzad ◽  
Lixin Zhang ◽  
Shahzad Saeed ◽  
Anwar Ali

Using first-principles calculations, we studied the electronic, structural and thermoelectric properties of two-dimensional (2D) MXenes [Formula: see text] ([Formula: see text] = Ti, Zr and Hf, [Formula: see text], 2 and 3). The calculations are carried out within the generalized gradient approximation (GGA). We have calculated the Boltzmann transport equation for finding the thermoelectric properties such as power factor, Seebeck coefficient and electrical conductivity. For [Formula: see text], these materials behave as semiconductors having an indirect bandgap nature. In contrast, for [Formula: see text] these materials show metallic behavior. Out of these MXenes, we found that Ti2CO2 has a high Seebeck coefficient value, whereas the electrical conductivity of Ti4C3O2 is exceptionally high. While among all these compounds, Ti2CO2 and Hf4C3O2 have a high power factor in the 300–1200-K temperature range.


2010 ◽  
Vol 4 (2) ◽  
pp. 1-6
Author(s):  
S. Sankar ◽  
◽  
G. Gokula Krishnan ◽  

Sign in / Sign up

Export Citation Format

Share Document