Metallic layered germanium phosphide GeP5 for high rate flexible all-solid-state supercapacitors

2018 ◽  
Vol 6 (40) ◽  
pp. 19409-19416 ◽  
Author(s):  
Bingchao Yang ◽  
Anmin Nie ◽  
Yukai Chang ◽  
Yong Cheng ◽  
Fusheng Wen ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
High Pressure ◽  
High Temperature ◽  
Solid State ◽  
High Rate ◽  
Two Dimensional ◽  
Oriented Growth ◽  
High Quality ◽  
Growth Technique ◽  
High Temperature High Pressure

In this study, high quality GeP5 crystals with two-dimensional (2D) layered structures and novel electrical conductivity of 2.4 × 106 S m−1 have been prepared under high-temperature high-pressure oriented growth technique (HTHP-OGT).

Hydrothermal approach and luminescent properties for the synthesis of orthoniobates GdNbO4:Ln3+ (Ln = Dy, Eu) single crystals under high-temperature high-pressure conditions

2014 ◽  
Vol 38 (9) ◽  
pp. 4249-4257 ◽  
Author(s):  
Min Yang ◽  
Xudong Zhao ◽  
Ying Ji ◽  
Fuyang Liu ◽  
Wei Liu ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Solid State ◽  
Single Crystal ◽  
Single Crystals ◽  
Luminescent Properties ◽  
Solid State Lighting ◽  
Potential Applications ◽  
Hydrothermal Approach ◽  
High Temperature High Pressure

GdNbO4:Ln3+ (Ln = Dy, Eu) single crystal phosphors are very important for potential applications in optoelectronics and solid-state lighting for general illumination.

High-temperature, high-pressure hydrothermal synthesis, crystal structure, and solid state NMR Spectroscopy of a lead borosilicate with boron-silicon mixing: Pb6B2Si8O25

2021 ◽  
Author(s):  
Ling-Wei Chang ◽  
Kwang-Hwa Lii
Keyword(s):  
Crystal Structure ◽  
High Pressure ◽  
High Temperature ◽  
Hydrothermal Synthesis ◽  
Solid State ◽  
Solid State Nmr ◽  
Hydrothermal Reaction ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Temperature High Pressure

A new lead(II) borosilicate, Pb6B2Si8O25 (1), has been synthesized by a high-temperature, high-pressure hydrothermal reaction at 480 °C and 990 bar. Its structure was determined by single-crystal X-ray diffraction. The...

Solid-state reaction of niobium with diamond carbon at high pressure and high temperature to form superconducting composite

2021 ◽  
Vol 31 (3) ◽  
pp. 415-418
Author(s):  
Vladimir Yu. Osipov ◽  
Fedor M. Shakhov ◽  
Nikolai M. Romanov ◽  
Kazuyuki Takai
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Solid State ◽  
Solid State Reaction

scholarly journals Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 928
Author(s):  
Yong Du ◽  
Zhenzhen Kong ◽  
Muhammet Toprak ◽  
Guilei Wang ◽  
Yuanhao Miao ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Crystalline Quality ◽  
Initial Growth ◽  
Two Dimensional ◽  
High Quality ◽  
Reduced Pressure

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 107 cm−2). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation.

Homogeneous carbon doping of magnesium diboride by high-temperature, high-pressure synthesis

2014 ◽  
Vol 104 (16) ◽  
pp. 162603 ◽  
Author(s):  
M. A. Susner ◽  
S. D. Bohnenstiehl ◽  
S. A. Dregia ◽  
M. D. Sumption ◽  
Y. Yang ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Magnesium Diboride ◽  
Carbon Doping ◽  
High Pressure Synthesis ◽  
Pressure Synthesis ◽  
High Temperature High Pressure
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