scholarly journals Observation of valence band crossing: the thermoelectric properties of CaZn2Sb2–CaMg2Sb2 solid solution

2018 ◽  
Vol 6 (20) ◽  
pp. 9437-9444 ◽  
Author(s):  
Max Wood ◽  
Umut Aydemir ◽  
Saneyuki Ohno ◽  
G. Jeffrey Snyder
Keyword(s):  
Solid Solution ◽  
Effective Mass ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Mass Model ◽  
Band Crossing ◽  
Effective Mass Model

Using an effective mass model, the changing valence band character of CaZn2Sb2–CaMg2Sb2 solid solution was probed along with the thermoelectric properties.

Direct evaluation of hole effective mass of SnS–SnSe solid solutions with ARPES measurement

2021 ◽  
Author(s):  
Issei Suzuki ◽  
Zexin Lin ◽  
Sakiko Kawanishi ◽  
Kiyohisa Tanaka ◽  
Yoshitaro Nose ◽  
...  
Keyword(s):  
Effective Mass ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Solid Solutions ◽  
Photoemission Spectroscopy ◽  
Direct Evaluation ◽  
Hole Effective Mass ◽  
Single Crystalline ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Effective Masses

Valence band dispersions of single-crystalline SnS1-xSex solid solutions were observed by angle-resolved photoemission spectroscopy (ARPES). The hole effective masses, crucial factors in determining thermoelectric properties, were directly evaluated. They decrease...

scholarly journals Effect of band structure adjustment based of Cu site on the thermoelectric properties of BiCuSeO

2021 ◽  
Author(s):  
Bo Feng
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Effective Mass ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Density Of States ◽  
First Principles Calculation ◽  
Temperature Range ◽  
Ti Doping

Abstract The effect of Ti doped at Cu site on the thermoelectric properties of BiCuSeO was studied by experimental method and first principles calculation. The results show that Ti doping can cause the lattice contraction and decrease the lattice constant. Ti doping can increase the band gap and lengthen the Cu/Ti-Se bond, resulting in the decrease of carrier concentration. Ti doping can reduce the effective mass and the Bi-Se bond length, correspondingly improve the carrier mobility. Ti doping can decrease the density of states of Cu-3d and Se-4p orbitals at the top of valence band, but Ti-4p orbitals can obviously increase the density of states at the top of valence band and finally increase the electrical conductivity in the whole temperature range. With the decrease of effective mass, Ti doping would reduce the Seebeck coefficient, but the gain effect caused by the increase of electrical conductivity is more than the benefit reduction effect caused by the decrease of Seebeck coefficient, and the power factor shows an upward trend. Ti doping can reduce Young's modulus, lead to the increase of defect scattering and strain field, correspondingly reduce the lattice thermal conductivity and total thermal conductivity. It is greatly increased for the ZT values in the middle and high temperature range, with the highest value of 1.04 at 873 K.

Effective Mass Model Supported Band Gap Variation in Cobalt-Doped ZnO Nanoparticles Obtained by Co-Precipitation

2020 ◽  
Vol 54 (3) ◽  
pp. 311-316 ◽  
Author(s):  
K. P. Misra ◽  
S. Jain ◽  
A. Agarwala ◽  
N. Halder ◽  
S. Chattopadhyay
Keyword(s):  
Band Gap ◽  
Effective Mass ◽  
Zno Nanoparticles ◽  
Mass Model ◽  
Doped Zno ◽  
Co Precipitation ◽  
Effective Mass Model

Electron Conductivity Effective Mass Model for Strained-Ge

2018 ◽  
Vol 13 (7) ◽  
pp. 986-994 ◽  
Author(s):  
W. Yang ◽  
J. J. Song ◽  
H. Y. Hu ◽  
H. M. Zhang
Keyword(s):  
Effective Mass ◽  
Electron Conductivity ◽  
Mass Model ◽  
Effective Mass Model

Low angle deviation from the anisotropic effective mass model in epitaxial YBa2(Cu1−xZnx)3O7−δ thin films

1997 ◽  
Vol 282-287 ◽  
pp. 2357-2358
Author(s):  
J.-F. de Marneffe ◽  
J. Schroeder ◽  
R. Deltour ◽  
A.G.M. Jansen ◽  
P. Wyder
Keyword(s):  
Thin Films ◽  
Effective Mass ◽  
Mass Model ◽  
Angle Deviation ◽  
Effective Mass Model
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