Oriented attachment growth of hundred-nanometer-size LaTaON2 single crystals in molten salts for enhanced photoelectrochemical water splitting

2018 ◽  
Vol 6 (17) ◽  
pp. 7706-7713 ◽  
Author(s):  
Junkang Zhou ◽  
Chenguang Zhou ◽  
Zhan Shi ◽  
Zhe Xu ◽  
Shicheng Yan ◽  
...  

Largely-sized single crystal photocatalyst was prepared by oriented attachment (OA) in molten salt.

2016 ◽  
Vol 09 (03) ◽  
pp. 1650047 ◽  
Author(s):  
Jiajia Cai ◽  
Yinglei Liu ◽  
Song Li ◽  
Meiqi Gao ◽  
Dunwei Wang ◽  
...  

Hematite is currently considered one of the most promising photoanode materials for light-driven water splitting. The photoelectrochemical performance of hematite is limited by its low conductivity. In this work, we demonstrate that the conductivity of hematite films can be tuned by controlling the orientation of hematite crystals. By applying a high magnetic field (up to 10 T) during the drop-casting preparation, hematite films composed of single crystal particles show featured texture by promoting those particles alignment with (001) normal to the substrate. By enhancing the photocurrent densities with tuned hematite orientation, the current method provides an effective way for increasing the number of carriers that can reach the surface.


Ceramist ◽  
2021 ◽  
Vol 24 (3) ◽  
pp. 286-294
Author(s):  
Seonhwa Park ◽  
Jung Woo Lee ◽  
Kyung-Hoon Cho ◽  
Yuho Min ◽  
Cheol-Woo Ahn

In this manuscript, an interesting phenomenon is reported. It has been reported that the growth of single crystals is observed in donor-doped (K,Na)NbO3 (KNN)-based ceramics. It is very interesting that the growth happens without the addition of a seed. The growth of huge grains (single crystal, approximately 30 mm,) occurs due to the abnormal grain growth (AGG) in KNN-based ceramics. In the AGG compositions, moreover, the seed plates can be synthesized by not topochemical reaction but simple molten salt synthesis (SMSS) which is a simple-and-cheap process. They can be a good candidate for the seeds at reactive templated grain growth (RTGG) or templated grain growth (TGG) process.


Solar RRL ◽  
2018 ◽  
Vol 2 (6) ◽  
pp. 1700243 ◽  
Author(s):  
Huiliang Li ◽  
Bo Zhang ◽  
Zeyan Wang ◽  
Peng Wang ◽  
Yuanyuan Liu ◽  
...  

2020 ◽  
Vol 12 (18) ◽  
pp. 20469-20478
Author(s):  
Shang Xu ◽  
Fulin Jiang ◽  
Fengmei Gao ◽  
Lin Wang ◽  
Jie Teng ◽  
...  

2019 ◽  
Vol 123 (17) ◽  
pp. 10857-10867 ◽  
Author(s):  
Roman Nebel ◽  
Kateřina Minhová Macounová ◽  
Hana Tarábková ◽  
Ladislav Kavan ◽  
Petr Krtil

2014 ◽  
Vol 70 (a1) ◽  
pp. C1411-C1411
Author(s):  
Takayoshi Oshima

Ga2O3 have been attracting much attention as a wide-band-gap semiconductor owing to a large band-gap of 4.8 eV and the availability of high-quality and large-sized single crystals, which are advantageous over conventional wide-band-gap semiconductors. This presentation focuses on optical applications using Ga2O3 single crystals: photodetectors and photoelectrodes, both of which show interesting and promising properties[1,2]. As for photodetectors, a PEDOT-PSS Schottky and In ohmic contacts were prepared on front and back surfaces of a n-type Ga2O3 single crystal plate, respectively, to fabricate a photovoltaic detector. The detector operated at zero bias (V = 0 V) exhibited high responsivities in the solar-blind region (< 280 nm). Incident photon to current conversion efficiency (IPCE) was as high as 21% at 240 nm and a 240-to-300 nm rejection ratio was as large as 10^4, indicating that the detector can be applicable for flame sensing. In fact, the detector successfully detected a flame by distinguishing several nW/cm2 weak solar-blind light from a flame under a strong fluorescent lamp illumination without using visible-cut filters. As for photoelectrodes, an n-type Ga2O3 single crystal plate with In ohmic contact on the back side was used for characterization. From impedance analysis, the conduction and valence band-edges in aqueous solutions were found to be 1.1 V higher and 2.5 V lower than the H+/H2 and O2/H2O redox potentials, respectively. These potential differences, or overpotentials for water splitting, are large enough for photolysis of water. When the photoelectrode was excited by photons, H2 and O2 gases evolved from a counter Pt electrode and the photoelectrode, respectively. The highest IPCE of 36% was obtained at 240 nm. Stoichiometric water splitting was demonstrated at V = 1V without using co-catalysts. These results encourage the notion of Ga2O3 optical applications and also contribute for developing Ga2O3 semiconductor studies.


2014 ◽  
Vol 20 (36) ◽  
pp. 11439-11444 ◽  
Author(s):  
Wen Qi Fang ◽  
Ziyang Huo ◽  
Porun Liu ◽  
Xue Lu Wang ◽  
Miao Zhang ◽  
...  

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