scholarly journals Design of cyclopentadithiophene-based small organic molecules as hole selective layers for perovskite solar cells

2018 ◽  
Vol 2 (10) ◽  
pp. 2179-2186 ◽  
Author(s):  
Laura Caliò ◽  
Samrana Kazim ◽  
Manuel Salado ◽  
Iwan Zimmermann ◽  
Mohammad Khaja Nazeeruddin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Organic Molecules ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Small Organic Molecules ◽  
P Type

Thiophene-based p-type semiconducting molecules were synthesized and exploited as hole transport layer in perovskite solar cells.

Enhanced performance of perovskite solar cells using p-type doped PFB:F4TCNQ composite as hole transport layer

2019 ◽  
Vol 771 ◽  
pp. 25-32 ◽  
Author(s):  
Mohammed Elawad ◽  
Licheng Sun ◽  
Genene Tessema Mola ◽  
Ze Yu ◽  
Elhadi Abdalla A. Arbab
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
P Type

scholarly journals Effect of V-Incorporated NiO Hole Transport Layer on the Performance of Inverted Perovskite Solar Cells

2020 ◽  
Vol 4 (1) ◽  
pp. 21
Author(s):  
Ashique Kotta ◽  
Hyung-Kee Seo
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Power Conversion Efficiency ◽  
Power Conversion ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Hole Transporting ◽  
P Type

Organic–inorganic hybrid perovskite solar cells have resulted in tremendous interest in developing future generation solar cells, due to their high efficiency exceeding 25%. For inverted type perovskite solar cells, the hole transporting layer plays a crucial role in improving the efficiency and stability of the perovskite solar cells by modifying band alignment, electric conductivity, and interfacial recombination losses. Here, vanadium doped NiO is selected as a hole transporting layer to study the impact of V dopant on the optoelectronic properties of NiO and photovoltaic performance. The prepared materials are characterized using XRD, SEM, TEM, and XPS. A TEM micrograph confirms that p-type materials have a small spherical dot structure. The V-doped NiO, used as a hole-extraction layer, can be prepared by a simple solvothermal decomposition method. The presence of V in the NiO layer has an influence on the conductivity of the NiO layer. Besides, synthesized p-type material can be used to fabricate a relatively low processing temperature, and has the advantage of a wide choice of transparent conductive oxide substrate. As a result, an inverted type planar perovskite solar cell incorporating of vanadium in NiO hole-transport layer improves the power conversion efficiency. The photovoltaic property of the prepared solar cell is measured under AM 1.5 G simulated light. The photocurrent density is 21.09 mA/cm2, open-circuit voltage is 1.04 V, and the fill factor is 0.63. As a result, the overall power conversion efficiency reaches 13.82%.

Stability and efficiency improved perovskite solar cells through tuning the hydrophobicity of the hole transport layer with an organic semiconductor

2021 ◽  
Author(s):  
Chongyang Xu ◽  
Zhihai Liu ◽  
Eun-Cheol Lee
Keyword(s):  
Solar Cells ◽  
Organic Semiconductor ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
P Type

We integrated a p-type organic semiconductor with the hole transport layer of inverted perovskite solar cells for improvements in stability and efficiency.

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