scholarly journals Ag8SnS6: a new IR solar absorber material with a near optimal bandgap

RSC Advances ◽  
2018 ◽  
Vol 8 (69) ◽  
pp. 39470-39476 ◽  
Author(s):  
Patsorn Boon-on ◽  
Belete Asefa Aragaw ◽  
Chun-Yen Lee ◽  
Jen-Bin Shi ◽  
Ming-Way Lee
Keyword(s):  
Photovoltaic Properties ◽  
Adsorption Reaction ◽  
Solar Absorber ◽  
Absorber Material ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

We report the synthesis and photovoltaic properties of a new ternary solar absorber – Ag8SnS6 nanocrystals prepared by successive ionic layer adsorption reaction (SILAR) technique.

Coating of Polyaniline Molecules on Cotton Fabric via Successive Ionic Layer Adsorption and Reaction (SILAR) Technique

2018 ◽  
Vol 775 ◽  
pp. 317-322
Author(s):  
John Raphael D. Barrios ◽  
Marvin U. Herrera
Keyword(s):  
Infrared Spectrum ◽  
Cotton Fabric ◽  
Surface Conductivity ◽  
Optimum Number ◽  
Layer By Layer ◽  
Layer Deposition ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Probe Measurements ◽  
Ionic Layer

Cotton fabric was coated with polyaniline molecules using Successive Ionic Layer Adsorption and Reaction (SILAR) technique. This method provides layer by layer deposition of polyaniline molecules. Infrared spectrum showed the vibrational peaks attributed with the presence of polyaniline molecules on the samples. Four-point probe measurements were done to obtain the surface conductivity of the samples. Upon increasing the dipping cycles, the conductivity of cotton fabric significantly increases. The optimum number of dipping cycle is found to be at 130. Beyond the optimum dipping cycle, the conductivity starts to decrease.

Growth of strongly orientated lead sulfide thin films by successive ionic layer adsorption and reaction (SILAR) technique

1996 ◽  
Vol 6 (2) ◽  
pp. 161-164 ◽  
Author(s):  
Tapio Kanniainen ◽  
Seppo Lindroos ◽  
Jarkko Ihanus ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Lead Sulfide ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

Atomic force microscopy studies of ZnS films grown on (100) GaAs by the successive ionic layer adsorption and reaction method

1998 ◽  
Vol 13 (6) ◽  
pp. 1688-1692 ◽  
Author(s):  
Mika P. Valkonen ◽  
Seppo Lindroos ◽  
Tapio Kanniainen ◽  
Markku Leskelä ◽  
Roland Resch ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

In this study zinc sulfide thin films were grown by the successive ionic layer adsorption and reaction (SILAR) technique on (100) GaAs substrates from aqueous precursor solutions. The atomic force microscopy (AFM) method was used to study the growth of the films up to a thickness of 180 nm. The ZnS thin films on (100) GaAs were smooth with an rms roughness of 0.2–1.9 nm depending on the film thickness. After the GaAs surface was covered with ZnS, the growth appeared to be nearly layerwise. In addition, in situ AFM studies were carried out to analyze the dissolution of (100) GaAs in water, which is a process competing with the thin film deposition by the SILAR.

scholarly journals Ion exchange-prepared NaSbSe2 nanocrystals: electronic structure and photovoltaic properties of a new solar absorber material

RSC Advances ◽  
2017 ◽  
Vol 7 (72) ◽  
pp. 45470-45477 ◽  
Author(s):  
Belete Asefa Aragaw ◽  
Jifeng Sun ◽  
David J. Singh ◽  
Ming-Way Lee
Keyword(s):  
Electronic Structure ◽  
Ion Exchange ◽  
Photovoltaic Properties ◽  
Solar Absorber ◽  
Absorber Material

We report the calculated electronic structure, syntheses and photovoltaic properties of a new ternary solar absorber material NaSbSe2.

CdS-PbS Multilayer Thin Films Grown by the SILAR Method

2004 ◽  
Vol 99-100 ◽  
pp. 243-246 ◽  
Author(s):  
S. Lindroos ◽  
J. Puišo ◽  
Sigitas Tamulevičius ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Double Layer ◽  
Crystalline Silicon ◽  
Normal Pressure ◽  
Multilayer Thin Films ◽  
Silar Method ◽  
Layer Structures ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

The successive ionic layer adsorption and reaction (SILAR) technique was used to grow double layer structures of CdS-PbS. The growth of thin films by the SILAR technique from diluted aqueous solutions was achieved, ionic layer by ionic layer, at room temperature and normal pressure. The thin films on silicon were characterized by XRD, AFM, XPS. It was established that a double layer could be grown on crystalline silicon and that the morphology and crystallinity of the films could be controlled by changing the lead precursor.

Growth of lead selenide thin films by the successive ionic layer adsorption and reaction (SILAR) technique

1996 ◽  
Vol 6 (6) ◽  
pp. 983-986 ◽  
Author(s):  
Tapio Kanniainen ◽  
Seppo Lindroos ◽  
Jarkko Ihanus ◽  
Markka Leskelä
Keyword(s):  
Thin Films ◽  
Lead Selenide ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer
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