scholarly journals Strain-engineering the electronic properties and anisotropy of GeSe2 monolayers

RSC Advances ◽  
2018 ◽  
Vol 8 (58) ◽  
pp. 33445-33450 ◽  
Author(s):  
Zongbao Li ◽  
Xia Wang ◽  
Wei Shi ◽  
Xiaobo Xing ◽  
Ding-Jiang Xue ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electronic Properties ◽  
Strain Engineering ◽  
Excellent Performance ◽  
Anisotropic Crystal ◽  
Anisotropic Properties ◽  
Significant Attention

GeSe2 has attracted significant attention recently due to its distinctive in-plane anisotropic properties originated from the in-plane anisotropic crystal structure and excellent performance in polarization-sensitive photodetection.

ChemInform Abstract: Crystal Structure and Electronic Properties of the New Compounds U3Co12-xX4 with X: Si, Ge.

ChemInform ◽  
2010 ◽  
Vol 41 (34) ◽  
pp. no-no
Author(s):  
A. Soude ◽  
O. Tougait ◽  
M. Pasturel ◽  
D. Kaczorowski ◽  
H. Noel
Keyword(s):  
Crystal Structure ◽  
Electronic Properties ◽  
New Compounds

Crystal structure and electronic properties of the new compound U3Fe4Ge4

2013 ◽  
Vol 554 ◽  
pp. 408-413 ◽  
Author(s):  
D. Berthebaud ◽  
O. Tougait ◽  
M. Potel ◽  
E.B. Lopes ◽  
J.C. Waerenborgh ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electronic Properties

scholarly journals Photocatalytic H2 generation over In2TiO5, Ni substituted In2TiO5 and NiTiO3 – a combined theoretical and experimental study

RSC Advances ◽  
2015 ◽  
Vol 5 (75) ◽  
pp. 61218-61229 ◽  
Author(s):  
A. M. Banerjee ◽  
M. R. Pai ◽  
A. Arya ◽  
S. R. Bharadwaj
Keyword(s):  
Crystal Structure ◽  
Experimental Study ◽  
Optical Absorption ◽  
Electronic Properties ◽  
Absorption Properties ◽  
H2 Generation ◽  
Ni Substitution ◽  
Consequent Effect ◽  
Photocatalytic H2 Generation

Role of Ni substitution in modifying the crystal structure, optical absorption properties and electronic properties of indium titanate, In2(1−x)Ni2xTiO5−δ (0.0 ≤ 2x ≤ 0.4) and its consequent effect on the photocatalytic properties for H2 generation.

scholarly journals Tuning the electronic properties of monolayer and bilayer PtSe2via strain engineering

2016 ◽  
Vol 4 (15) ◽  
pp. 3106-3112 ◽  
Author(s):  
Pengfei Li ◽  
Lei Li ◽  
Xiao Cheng Zeng
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Strain Engineering ◽  
Band Gaps ◽  
Wide Range

Based on the first-principles computations we show that the band gaps of monolayer and bilayer PtSe2 can be tuned over a wide range via strain engineering.

scholarly journals Crystal Structure Refinement and Electronic Properties of Si(cI16)

2009 ◽  
Vol 635 (4-5) ◽  
pp. 700-703 ◽  
Author(s):  
Aron Wosylus ◽  
Helge Rosner ◽  
Walter Schnelle ◽  
Ulrich Schwarz
Keyword(s):  
Crystal Structure ◽  
Electronic Properties ◽  
Structure Refinement ◽  
Crystal Structure Refinement

Strain engineering and electric field tunable of the electronic properties of two-dimensional ZnGeN2 monolayer

2021 ◽  
Author(s):  
Thi Nga Do ◽  
Son-Tung Nguyen ◽  
Khang Pham
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
First Principles ◽  
Strain Engineering ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Structural And Electronic Properties

In this work, by means of the first-principles calculations, we investigate the structural and electronic properties of a two-dimensional ZnGeN2 monolayer as well as the effects of strains and electric...

Tuning tetrahedral structure and electronic properties of FeSe films through strain engineering

2020 ◽  
Vol 145 ◽  
pp. 109541
Author(s):  
Xin Wang ◽  
Hua Li ◽  
Yanyan Huang ◽  
Zhengchao Dong ◽  
Chonggui Zhong ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Strain Engineering ◽  
Tetrahedral Structure

Diverse electronic properties of 2D layered Se-containing materials composed of quasi-1D atomic chains

2020 ◽  
Vol 22 (4) ◽  
pp. 2122-2129 ◽  
Author(s):  
Yawen Li ◽  
Yuanhui Sun ◽  
Guangren Na ◽  
Wissam A. Saidi ◽  
Lijun Zhang
Keyword(s):  
Electronic Properties ◽  
Optoelectronic Devices ◽  
Layered Materials ◽  
Two Dimensional ◽  
Next Generation ◽  
Atomic Chains ◽  
Significant Attention

The two-dimensional (2D) atomically thin layered materials have attracted significant attention for constructing next-generation integrated electronic and optoelectronic devices.

Sign in / Sign up

Export Citation Format

Share Document