scholarly journals Synthesis and photoluminescence properties of novel far-red-emitting BaLaMgNbO6:Mn4+ phosphors for plant growth LEDs

RSC Advances ◽  
2018 ◽  
Vol 8 (50) ◽  
pp. 28538-28545 ◽  
Author(s):  
Qi Sun ◽  
Shaoying Wang ◽  
Balaji Devakumar ◽  
Bin Li ◽  
Liangling Sun ◽  
...  
Keyword(s):  
Plant Growth ◽  
Quantum Efficiency ◽  
Potential Application ◽  
Internal Quantum Efficiency ◽  
Double Perovskite ◽  
Photoluminescence Properties

Mn4+-activated BaLaMgNbO6 far-red emitting double-perovskite phosphors with internal quantum efficiency up to 52% were developed for potential application in plant growth LEDs.

scholarly journals Thermally stable La2LiSbO6:Mn4+,Mg2+far-red emitting phosphors with over 90% internal quantum efficiency for plant growth LEDs

RSC Advances ◽  
2018 ◽  
Vol 8 (56) ◽  
pp. 31835-31842 ◽  
Author(s):  
Liangling Sun ◽  
Balaji Devakumar ◽  
Jia Liang ◽  
Bin Li ◽  
Shaoying Wang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Plant Growth ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Double Perovskite ◽  
Thermally Stable ◽  
Good Thermal Stability

Double perovskite La2LiSbO6:Mn4+,Mg2+far-red emitting phosphors with internal quantum efficiency as high as 92% and good thermal stability were developed for plant growth LEDs.

The novel Sr3LiSbO6:Mn4+, Ca2+ far-red-emitting phosphors with over 95% internal quantum efficiency for indoor plant growth LEDs

2021 ◽  
Vol 237 ◽  
pp. 118165
Author(s):  
Linyan Fu ◽  
Yunlong Yang ◽  
Yi Zhang ◽  
Xuefei Ren ◽  
Yingjie Zhu ◽  
...  
Keyword(s):  
Plant Growth ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
The Novel

scholarly journals Highly efficient red-emitting Ca2YSbO6:Eu3+ double perovskite phosphors for warm WLEDs

RSC Advances ◽  
2019 ◽  
Vol 9 (36) ◽  
pp. 20742-20748 ◽  
Author(s):  
Meijiao Liu ◽  
Biao Shen ◽  
Keyuan Wang ◽  
Jiasong Zhong ◽  
Daqin Chen
Keyword(s):  
Quantum Efficiency ◽  
Potential Application ◽  
Double Perovskite ◽  
Concentration Quenching ◽  
High Concentration ◽  
Highly Efficient ◽  
Red Emitting Phosphor

A double perovskite Ca2YSbO6:Eu3+ red-emitting phosphor with high concentration quenching and excellent quantum efficiency was developed to find a potential application in warm WLEDs.

Synthesis and photoluminescence properties of a novel Ca2LaNbO6:Mn4+ double perovskite phosphor for plant growth LEDs

2019 ◽  
Vol 30 (16) ◽  
pp. 15504-15511 ◽  
Author(s):  
Lei Shi ◽  
Ya-jie Han ◽  
Zhi-xin Ji ◽  
Zi-han Li ◽  
Huan-huan Li ◽  
...  
Keyword(s):  
Plant Growth ◽  
Double Perovskite ◽  
Photoluminescence Properties

Highly efficient near-UV-excitable Ca2YHf2Al3O12:Ce3+,Tb3+ green-emitting garnet phosphors with potential application in high color rendering warm-white LEDs

2020 ◽  
Vol 8 (13) ◽  
pp. 4408-4420 ◽  
Author(s):  
Shaoying Wang ◽  
Balaji Devakumar ◽  
Qi Sun ◽  
Jia Liang ◽  
Liangling Sun ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Potential Application ◽  
Internal Quantum Efficiency ◽  
White Leds ◽  
Highly Efficient ◽  
Color Rendering

Novel near-UV-excitable Ca2YHf2Al3O12:Ce3+,Tb3+ green phosphors with a highest internal quantum efficiency of 86.6% and external quantum efficiency of 63.1% were reported for high-CRI warm-white LEDs.

scholarly journals Preparation, characterization, and luminescence properties of double perovskite SrLaMgSbO6:Mn4+ far-red emitting phosphors for indoor plant growth lighting

RSC Advances ◽  
2018 ◽  
Vol 8 (61) ◽  
pp. 35187-35194 ◽  
Author(s):  
Liangling Sun ◽  
Jia Liang ◽  
Balaji Devakumar ◽  
Qi Sun ◽  
Shaoying Wang ◽  
...  
Keyword(s):  
Plant Growth ◽  
Double Perovskite ◽  
Luminescence Properties ◽  
Photoluminescence Properties

Novel far-red emitting double perovskite SrLaMgSbO6:Mn4+ phosphors were prepared and their photoluminescence properties were studied for applications in indoor plant growth lighting.

Synthesis and photoluminescence properties of novel Ca2LaSbO6:Mn4+ double perovskite phosphor for plant growth LEDs

2019 ◽  
Vol 45 (4) ◽  
pp. 4739-4746 ◽  
Author(s):  
Lei Shi ◽  
Ya-jie Han ◽  
Zhi-gang Zhang ◽  
Zhi-xin Ji ◽  
Dan-chen Shi ◽  
...  
Keyword(s):  
Plant Growth ◽  
Double Perovskite ◽  
Photoluminescence Properties

Photoluminescence Properties and Quantum Efficiency of Eu3+/Mn2+- Doped ZnMoO4 Red Phosphor

2020 ◽  
Vol 843 ◽  
pp. 70-78
Author(s):  
Fan Chen ◽  
Mustafa Hasan Balci ◽  
He Xin Xia ◽  
Muhammad Nadeem Akram ◽  
Xu Yuan Chen
Keyword(s):  
Rare Earth ◽  
Quantum Efficiency ◽  
Lattice Structure ◽  
Internal Quantum Efficiency ◽  
Sol Gel ◽  
Radiative Transition ◽  
Integrating Sphere ◽  
Photoluminescence Properties ◽  
Excitation Peak ◽  
Rare Earth Doped

In this work, fabrication and characterization of a nanostructured rare-earth-doped ZnMoO4 will be reported. Photoluminescence properties and quantum efficiency of the rare-earth-doped ZnMoO4 with different dopant concentrations have been investigated. These samples were synthesized by sol-gel method. Lattice structure of the fabricated samples was characterized by X-ray powder diffraction (XRD); absorption spectrum was performed on UV-2600 photo spectrometer; PL excitation and emission spectra were recorded by Fluorescence Spectrometers; quantum efficiency was measured by an integrating sphere photoluminescence (PL) system. The results showed that the optimized doping concentration of Eu3+ was around 10 mol% for the highest quantum efficiency at 616 nm emission peak and 465 nm excitation peak. The highest internal quantum efficiency was 91% at low power density excitation (around 50 μW/mm2). Introduction of Mn2+ to Eu3+-doped ZnMoO4 lead to reduced quantum efficiency and electronic lifetime, which can be attributed to defects inside the crystal lattice and energy transfer from Eu3+ to Mn2+ (more non-radiative transition occur).

scholarly journals Perspectives on UVC LED: Its Progress and Application

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 196
Author(s):  
Tsung-Chi Hsu ◽  
Yu-Tsai Teng ◽  
Yen-Wei Yeh ◽  
Xiaotong Fan ◽  
Kuo-Hsiung Chu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Flip Chip ◽  
Layer Structure ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Reverse Current ◽  
Light Extraction ◽  
Epitaxial Layers ◽  
High Electron ◽  
Recombination Rates

High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the design of blocking layers and carrier transportation to generate high electron–hole recombination rates. This also aids in increasing the internal quantum efficiency. The cap layer, p-GaN, exhibits high absorption in deep UV radiation; thus, a small thickness is usually chosen. Flip chip design is more popular for such devices in the UV band, and the main factors for consideration are light extraction and heat transportation. However, the choice of encapsulation materials is important, because unsuitable encapsulation materials will be degraded by ultraviolet light irradiation. A suitable package design can account for light extraction and heat transportation. Finally, an atomic layer deposition Al2O3 film has been proposed as a mesa passivation layer. It can provide a low reverse current leakage. Moreover, it can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability. UVC LED applications can be used in sterilization, water purification, air purification, and medical and military fields.

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