Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures
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The piezoresistance in crystalline 3C-SiC epitaxially grown on Si was investigated at low temperatures down to 150 K. The large gauge factor in 3C-SiC indicates its feasibility for sensing applications in cryogenic environments.
2007 ◽
Vol 46
(4A)
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pp. 1415-1426
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1977 ◽
Vol 12
(2)
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pp. 199-201
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2012 ◽
Vol 62
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pp. 47-50
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