scholarly journals Enhanced efficiency of Cu2ZnSn(S,Se)4 solar cells via anti-reflectance properties and surface passivation by atomic layer deposited aluminum oxide

RSC Advances ◽  
2018 ◽  
Vol 8 (34) ◽  
pp. 19213-19219 ◽  
Author(s):  
Bingye Zhang ◽  
Lu Han ◽  
Shitian Ying ◽  
Yongfeng Li ◽  
Bin Yao

ALD-Al2O3 is used as a passivation layer in a CZTSSe device and optimal device parameters are obtained by precisely controlling Al2O3 thickness.

2021 ◽  
Author(s):  
Ran Zhao ◽  
Kai Zhang ◽  
Jiahao Zhu ◽  
Shuang Xiao ◽  
Wei Xiong ◽  
...  

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...


2016 ◽  
Vol 6 (12) ◽  
pp. 1600198 ◽  
Author(s):  
Yun Seog Lee ◽  
Talia Gershon ◽  
Teodor K. Todorov ◽  
Wei Wang ◽  
Mark T. Winkler ◽  
...  

2019 ◽  
Author(s):  
Ismo T. S. Heikkinen ◽  
George Koutsourakis ◽  
Sebastian Wood ◽  
Ville Vähänissi ◽  
Fernando A. Castro ◽  
...  

MRS Advances ◽  
2018 ◽  
Vol 3 (25) ◽  
pp. 1419-1426 ◽  
Author(s):  
Yasuyoshi Kurokawa ◽  
Ryota Nezasa ◽  
Shinya Kato ◽  
Hisashi Miyazaki ◽  
Isao Takahashi ◽  
...  

ABSTRACTTo improve conversion efficiency of silicon nanowire (SiNW) solar cells, it is very important to reduce the surface recombination rate on the surface of SiNWs, since SiNWs have a large surface area. We tried to cover SiNWs with aluminum oxide (Al2O3) and titanium oxide (TiO2) by atomic layer deposition (ALD), since Al2O3 grown by ALD provides an excellent level of surface passivation on silicon wafers and TiO2 has a higher refractive index than Al2O3, leading to the reduction of surface reflectance. The effective minority carrier lifetime in SiNW arrays embedded in a TiO2/Al2O3 stack layer of 94 μsec was obtained, which was comparable to an Al2O3 single layer. The surface reflectance of SiNW solar cells was drastically decreased below around 5% in all of the wavelength range using the Al2O3/TiO2/Al2O3 stack layer. Heterojunction SiNW solar cells with the structure of ITO/p-type hydrogenated amorphous silicon (a-Si:H)/n-type SiNWs embedded in Al2O3 and TiO2 stack layer for passivation/n-type a-Si:H/back electrode was fabricated, and a typical rectifying property and open-circuit voltage of 356 mV were successfully obtained.


2020 ◽  
Vol 217 (18) ◽  
pp. 2000348
Author(s):  
Kortan Öğütman ◽  
Nafis Iqbal ◽  
Geoffrey Gregory ◽  
Mengjie Li ◽  
Michael Haslinger ◽  
...  

Solar Energy ◽  
2019 ◽  
Vol 190 ◽  
pp. 264-271 ◽  
Author(s):  
Peng-Peng Cheng ◽  
Yong-Wen Zhang ◽  
Jia-Ming Liang ◽  
Wan-Yi Tan ◽  
Xudong Chen ◽  
...  

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