scholarly journals Near-complete photoluminescence retention and improved stability of InP quantum dots after silica embedding for their application to on-chip-packaged light-emitting diodes

RSC Advances ◽  
2018 ◽  
Vol 8 (18) ◽  
pp. 10057-10063 ◽  
Author(s):  
Eun-Pyo Jang ◽  
Jung-Ho Jo ◽  
Min-Seok Kim ◽  
Suk-Young Yoon ◽  
Seung-Won Lim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Highly Efficient ◽  
Improved Stability ◽  
Embedding Strategy ◽  
On Chip ◽  
Inp Quantum Dots

Silica embedding strategy enabling a nearly full PL retention of the original QY of InP QDs is proposed for the realization of a highly efficient, robust QD-LED platform.

Reduced Working Temperature of Quantum Dots-Light-Emitting Diodes Optimized by QDs@Silica-on-Chip Structure

2018 ◽  
Author(s):  
Bin Xie ◽  
Haochen Liu ◽  
Xiao Wei Sun ◽  
Xingjian Yu ◽  
Kai Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diodes ◽  
Temperature Stability ◽  
Phosphor Layer ◽  
Light Emitting ◽  
Yellow Phosphor ◽  
Working Temperature ◽  
On Chip ◽  
White Light Emitting Diodes ◽  
Color Rendering

White light-emitting diodes (WLEDs) composed of blue LED chip, yellow phosphor, and red quantum dots (QDs) are considered as a potential alternative for next-generation artificial light source with their high luminous efficiency (LE) and color-rendering index (CRI). While, QDs’ poor temperature stability and the incompatibility of QDs/silicone severely hinder the wide utilization of QDs-WLEDs. To relieve this, here we proposed a separated QSNs/phosphor structure, which composed of a QSNs-on-chip layer with a yellow phosphor layer above. A silica shell was coated onto the QDs surface to solve the compatibility problem between QDs and silicone. With CRI > 92 and R9 > 90, the newly proposed QDs@silica nanoparticles (QSNs) based WLEDs present 16.7 % higher LE and lower QDs working temperature over conventional mixed type WLEDs. The reduction of QDs’ temperature can reach 11.5 °C, 21.3 °C and 30.3 °C at driving current of 80 mA, 200 mA and 300 mA, respectively.

Highly efficient silica-coated Eu3+ and Mn2+ doped CsPbCl3 perovskite quantum dots for application in light-emitting diodes

2019 ◽  
Vol 12 (7) ◽  
pp. 072006 ◽  
Author(s):  
Yinhua Wang ◽  
Yongsheng Zhu ◽  
Gang Yang ◽  
Xingqiang Yang ◽  
Xiumei Xu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Highly Efficient ◽  
Perovskite Quantum Dots

Highly Efficient Green-Light-Emitting Diodes Based on CdSe@ZnS Quantum Dots with a Chemical-Composition Gradient

2009 ◽  
Vol 21 (17) ◽  
pp. 1690-1694 ◽  
Author(s):  
Wan Ki Bae ◽  
Jeonghun Kwak ◽  
Ji Won Park ◽  
Kookheon Char ◽  
Changhee Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Composition ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Composition Gradient ◽  
Light Emitting ◽  
Highly Efficient

Highly Efficient White Light-Emitting Diodes Based on Quantum Dots and Polymer Interface

2012 ◽  
Vol 24 (18) ◽  
pp. 1594-1596 ◽  
Author(s):  
Byoung-Ho Kang ◽  
Tae-Yang You ◽  
Se-Hyuk Yeom ◽  
Kyu-Jin Kim ◽  
Su-Hwan Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
White Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Polymer Interface ◽  
Highly Efficient ◽  
White Light Emitting Diodes

Highly efficient Mn-doped CsPb(Cl/Br)3 quantum dots for white light-emitting diodes

2019 ◽  
Vol 31 (6) ◽  
pp. 065603 ◽  
Author(s):  
Chun Sun ◽  
Le Wang ◽  
Sijing Su ◽  
Zhiyuan Gao ◽  
Hua Wu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
White Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Highly Efficient ◽  
White Light Emitting Diodes ◽  
Mn Doped

Improving lumen maintenance by nanopore array dispersed quantum dots for on-chip light emitting diodes

2017 ◽  
Vol 111 (24) ◽  
pp. 243505 ◽  
Author(s):  
Quan Chen ◽  
Fan Yang ◽  
Renzhuo Wan ◽  
Dong Fang
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
On Chip
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