scholarly journals Linear control of the oxidation level on graphene oxide sheets using the cyclic atomic layer reduction technique

Nanoscale ◽  
2019 ◽  
Vol 11 (16) ◽  
pp. 7833-7838 ◽  
Author(s):  
Bikash Chandra Mallick ◽  
Chien-Te Hsieh ◽  
Ken-Ming Yin ◽  
Jianlin Li ◽  
Yasser Ashraf Gandomi

Precise control of the oxidation level on graphene oxide (GO) sheets is still a big challenge.

2019 ◽  
Vol 21 (14) ◽  
pp. 7623-7629 ◽  
Author(s):  
Yizhou Yang ◽  
Liuhua Mu ◽  
Liang Chen ◽  
Guosheng Shi ◽  
Haiping Fang

Based on DFT computations, we show that different hydrated cations can precisely control the interlayer spacings between graphene sheets, which are smaller than that between graphene oxide sheets, indicating an ion sieving.


Carbon ◽  
2018 ◽  
Vol 137 ◽  
pp. 234-241 ◽  
Author(s):  
Si-Yong Gu ◽  
Chien-Te Hsieh ◽  
Tzu-Wei Lin ◽  
Jeng-Kuei Chang ◽  
Jianlin Li ◽  
...  

2020 ◽  
Vol 8 (2) ◽  
pp. 700-705 ◽  
Author(s):  
Siyong Gu ◽  
Chien-Te Hsieh ◽  
Bikash Chandra Mallick ◽  
Yasser Ashraf Gandomi ◽  
Jeng-Kuei Chang ◽  
...  

Nitrogen functionalization on graphene sheets has solely been demonstrated with a stepwise amidation implementation within the literature.


2017 ◽  
Vol 172 ◽  
pp. 20-27 ◽  
Author(s):  
Amr A. Yakout ◽  
Ramadan H. El-Sokkary ◽  
Mohamed A. Shreadah ◽  
Omnia G. Abdel Hamid

2011 ◽  
Vol 106 (3) ◽  
pp. 501-506 ◽  
Author(s):  
Karthikeyan Krishnamoorthy ◽  
Murugan Veerapandian ◽  
Rajneesh Mohan ◽  
Sang-Jae Kim

2007 ◽  
Vol 124-126 ◽  
pp. 603-606
Author(s):  
Sang Hee Won ◽  
Seung Hee Go ◽  
Jae Gab Lee

Simple process for the fabrication of Co/TiO2/Pt resistive random access memory, called ReRAM, has been developed by selective deposition of Co on micro-contact printed (μ-CP) self assembled monolayers (SAMs) patterns. Atomic Layer Deposition (ALD) was used to deposit TiO2 thin films, showing its ability of precise control over the thickness of TiO2, which is crucial to obtain proper resistive switching properties of TiO2 ReRAM. The fabrication process for Co/TiO2/Pt ReRAM involves the ALD of TiO2 on sputter-deposited Pt bottom electrode, followed by μ-CP with SAMs and then selective deposition of Co. This results in the Co/TiO2/Pt structure ReRAM. For comparison, Pt/TiO2/Pt ReRAM was produced and revealing the similar switching characteristics as that of Co/TiO2/Pt, thus indicating the feasibility of Co replacement with Pt top electrode. The ratios between the high-resistance state (Off state) and the low-resistance state (On state) were larger than 102. Consequently, the selective deposition of Co with μ-CP, newly developed in this study, can simplify the process and thus implemented into the fabrication of ReRAM.


2014 ◽  
Vol 22 (10) ◽  
pp. 11436 ◽  
Author(s):  
Feng Han ◽  
Shuming Yang ◽  
Weixuan Jing ◽  
Kyle Jiang ◽  
Zhuangde Jiang ◽  
...  

2012 ◽  
Vol 34 (1) ◽  
pp. 88-93 ◽  
Author(s):  
Haibo Wang ◽  
Tingting Chen ◽  
Shuang Wu ◽  
Xia Chu ◽  
Ruqin Yu

2021 ◽  
Vol 13 (12) ◽  
pp. 14786-14795
Author(s):  
Jiwon Jang ◽  
Seok Hyun Song ◽  
Hyeri Kim ◽  
Junsoo Moon ◽  
Hyungju Ahn ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document