Unveiling lasing mechanism in CsPbBr3 microsphere cavities

Nanoscale ◽  
2019 ◽  
Vol 11 (7) ◽  
pp. 3145-3153 ◽  
Author(s):  
Wenna Du ◽  
Shuai Zhang ◽  
Zhiyong Wu ◽  
Qiuyu Shang ◽  
Yang Mi ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Single Mode ◽  
Scattering Process ◽  
Phonon Modes ◽  
Exciton Scattering ◽  
Lasing Mechanism

The mechanism of single-mode lasing in CsPbBr3 microsphere shifts from exciton–exciton scattering to exciton–phonon scattering with the increase in temperature from 77 to 300 K, and two different phonon modes were involved in the exciton–phonon scattering process.

A Theoretical study of the Thermoelectric Transport Coefficients of n-type PbTe

2014 ◽  
Vol 1661 ◽  
Author(s):  
Jawaher Al-Otaibi ◽  
Gyaneshwar P. Srivastava
Keyword(s):  
Electronic Transport ◽  
Continuum Model ◽  
Theoretical Study ◽  
Phonon Scattering ◽  
Transport Coefficients ◽  
Single Mode ◽  
Phonon Modes ◽  
Anharmonic Interactions ◽  
Electron Phonon Scattering

ABSTRACTIn this work we present a theoretical study of the transport coefficients of n-type PbTe. The electronic transport coefficients are calculated using the isotropic-nearly-free-electron approximation, including the effect of band non-parabolicity on electron-phonon scattering. The lattice thermal transport coefficient is computed by employing the isotropic continuum model for the dispersion relation for acoustic as well as optical phonon branches, an isotropic anharmonic continuum model for crystal anharmonicity, and the single-mode relaxation time scheme. The role of transverse optical (TO) phonon modes in anharmonic interactions will be discussed in detail.

Study on Phonon Drag Effect and Phonon Transport in Thin Si-on-Insulator Layers

2015 ◽  
Vol 1117 ◽  
pp. 86-89 ◽  
Author(s):  
Hiroya Ikeda ◽  
Takuro Oda ◽  
Yuhei Suzuki ◽  
Yoshinari Kamakura ◽  
Faiz Salleh
Keyword(s):  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Phonon Scattering ◽  
Phonon Transport ◽  
Infrared Photodetector ◽  
Phonon Drag ◽  
Drag Effect ◽  
Phonon Modes ◽  
Highly Sensitive ◽  
Insulator Layers

The Seebeck coefficient of P-doped ultrathin Si-on-insulator (SOI) layers is investigated for the application to a highly-sensitive thermopile infrared photodetector. It is found that the Seebeck coefficient originating from the phonon drag is significant in the lightly doped region and depends on the carrier concentration with increasing carrier concentration above ~5×1018 cm-3. On the basis of Seebeck coefficient calculations considering both electron and phonon distribution, the phonon-drag part of SOI Seebeck coefficient is mainly governed by the phonon transport, in which the phonon-phonon scattering process is dominant rather than the crystal boundary scattering even in the SOI layer with a thickness of 10 nm. This fact suggests that the phonon-drag Seebeck coefficient is influenced by the phonon modes different from the thermal conductivity.

Electron-Phonon Scattering in GaN/AlN and GaAs/AlAs Quantum Wells

1997 ◽  
Vol 482 ◽  
Author(s):  
T. F. Forbang ◽  
C. R. McIntyre
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Spectrum ◽  
Phonon Scattering ◽  
Relaxation Times ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
Optical Phonon Scattering ◽  
Electron Phonon Scattering

AbstractWe have studied the effects on the phonon spectrum and on the electron-longitudinal optical phonon scattering in GaN/AlN and GaAs/AlAs quantum wells. Phonon modes and potentials have been calculated for both systems. Results for emission due to electroninterface phonons interactions are presented. We will discuss the implications for relaxation times and electron mobility due to modified LO-phonon scattering in both systems.

scholarly journals Reduction of Lattice Thermal Conductivity in PbTe Induced by Artificially Generated Pores

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Jae-Yeol Hwang ◽  
Eun Sung Kim ◽  
Syed Waqar Hasan ◽  
Soon-Mok Choi ◽  
Kyu Hyoung Lee ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Pore Structure ◽  
Transport Properties ◽  
Thermoelectric Materials ◽  
Thermal Transport ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Phonon Modes ◽  
Thermal Transport Properties

Highly dense pore structure was generated by simple sequential routes using NaCl and PVA as porogens in conventional PbTe thermoelectric materials, and the effect of pores on thermal transport properties was investigated. Compared with the pristine PbTe, the lattice thermal conductivity values of pore-generated PbTe polycrystalline bulks were significantly reduced due to the enhanced phonon scattering by mismatched phonon modes in the presence of pores (200 nm–2 μm) in the PbTe matrix. We obtained extremely low lattice thermal conductivity (~0.56 W m−1 K−1at 773 K) in pore-embedded PbTe bulk after sonication for the elimination of NaCl residue.

Monte Carlo Study of Phonon Heat Conduction in Silicon Thin Films Including Contributions of Optical Phonons

2010 ◽  
Vol 132 (5) ◽  
Author(s):  
Arpit Mittal ◽  
Sandip Mazumder
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Monte Carlo ◽  
Heat Conduction ◽  
Phonon Scattering ◽  
Computational Domain ◽  
Optical Phonons ◽  
Phonon Modes ◽  
Silicon Thin Film ◽  
Silicon Thin Films

Abstract The Monte Carlo method has found prolific use in the solution of the Boltzmann transport equation for phonons for the prediction of nonequilibrium heat conduction in crystalline thin films. This paper contributes to the state-of-the-art by performing a systematic study of the role of the various phonon modes on thermal conductivity predictions, in particular, optical phonons. A procedure to calculate three-phonon scattering time-scales with the inclusion of optical phonons is described and implemented. The roles of various phonon modes are assessed. It is found that transverse acoustic (TA) phonons are the primary carriers of energy at low temperatures. At high temperatures (T>200 K), longitudinal acoustic (LA) phonons carry more energy than TA phonons. When optical phonons are included, there is a significant change in the amount of energy carried by various phonons modes, especially at room temperature, where optical modes are found to carry about 25% of the energy at steady state in silicon thin films. Most importantly, it is found that inclusion of optical phonons results in better match with experimental observations for silicon thin-film thermal conductivity. The inclusion of optical phonons is found to decrease the thermal conductivity at intermediate temperatures (50–200 K) and to increase it at high temperature (>200 K), especially when the film is thin. The effect of number of stochastic samples, the dimensionality of the computational domain (two-dimensional versus three-dimensional), and the lateral (in-plane) dimension of the film on the statistical accuracy and computational efficiency is systematically studied and elucidated for all temperatures.

Mechanism of Thermal Conductivity Reduction From Suspended to Supported Graphene: A Quantitative Spectral Analysis of Phonon Scattering

2011 ◽  
Author(s):  
Bo Qiu ◽  
Xiulin Ruan
Keyword(s):  
Thermal Conductivity ◽  
Spectral Analysis ◽  
Phonon Scattering ◽  
Md Simulations ◽  
Mean Free Path ◽  
Spectral Energy ◽  
Phonon Modes ◽  
Suspended Graphene ◽  
Out Of Plane ◽  
Predicted Values

In this work, we perform molecular dynamics (MD) simulations together with phonon spectral analysis to predict the thermal conductivity of both suspended and supported graphene. We quantitatively address the relative importance of different types of phonon in thermal transport and explain why thermal conductivity is significantly reduced in supported graphene compared to that in suspended graphene. Within the framework of equilibrium MD, we perform spectral energy density analysis to obtain the phonon mean free path of each individual phonon mode. The contribution of each mode to thermal conductivity is then calculated and summed to obtain the lattice thermal conductivity in the temperature range 300–650 K. Our predicted values and temperature dependence for both suspended and supported graphene agree with experimental data well. In contrast to prior studies, our results suggest that the contribution from out-of-plane acoustic (ZA) branch to thermal conductivity is around 25–30% in suspended graphene at room temperature. The thermal conductivity of supported graphene is predicted to be largely reduced, which is consistent with experimental observations. Such reduction is shown to be due to stronger scattering of all phonon modes rather than only the ZA mode in the presence of the substrate.

scholarly journals Crystallographic Orientation Effect On Hole Polar Optical Phonon Scattering Rates in Thin Gaas/Alxga1-Xas Quantum Wells

2019 ◽  
Author(s):  
Mohamed Boumaza
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Strain Effect ◽  
Polar Optical Phonon ◽  
Phonon Modes ◽  
Bulk Gaas ◽  
Hole Energy ◽  
Optical Phonon Scattering ◽  
Scattering Rates

We report on hole polar optical phonon scattering processes in thin GaAs/AlxGa1-xAs quantum wells grown in various crystallographic directions, such as [001], [110]. Using the dielectric continuum model we focus on how the different scattering processes of holes with interface phonon modes depend on the initial hole energy. In our work, we use the Luttinger-Kohn (LK) 6×6 k.p Hamiltonian with the envelope function approximation, from which we compute numerically the electronic structure of holes for a thin quantum well sustaining only one bound state for each type of hole. Due to mixing between the heavy, light, and split off bands, hole subbands exhibit strong nonparabolicity and important warping that have their word to say on physical properties. Detailed and extensive calculations that the rates for intra-subband scattering processes differ significantly from those of bulk GaAs because of quantization and reduced dimensionality. Moreover, the study of scattering as a function of hole energy shows that the trend of the scattering rates is governed mostly by i) overlap integrals and ii) the density of the final states to which the hole scatters. The influence of warping, in the hole energy dispersion, on the phonon scattering rates is also explored and found to be important when the initial hole energy is high. Our calculations show evidence of strong anisotropy in the scattering rates especially for processes involving the heavy hole subband, which anisotropy is in fact quite important and far from being negligible. However, strain effect can reduce scattering rates.

The crystallization, thermodynamic and thermoelectric properties of vast off-stoichiometric Sn–Se crystals

2020 ◽  
Vol 8 (19) ◽  
pp. 6422-6434 ◽  
Author(s):  
Ming Liu ◽  
Jingjing Zhang ◽  
Jian Xu ◽  
Baofu Hu ◽  
Ke Sun ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Phonon Scattering ◽  
Covalent Bonding ◽  
Scattering Process

The higher thermal conductivity in Sn-rich samples suggests that the enhancement of the covalent bonding across Sn–Se slabs along a direction dominated the phonon scattering process in SnSe.

Phonon mode contributions to thermal conductivity of pristine and defective β-Ga2O3

2018 ◽  
Vol 20 (46) ◽  
pp. 29236-29242 ◽  
Author(s):  
Zhequan Yan ◽  
Satish Kumar
Keyword(s):  
Thermal Conductivity ◽  
Phonon Mode ◽  
Phonon Scattering ◽  
Phonon Modes

The effects of oxygen and gallium vacancies on the thermal conductivity of β-Ga2O3 and phonon modes’ contributions to thermal conductivity considering the defect-induced phonon scattering have been studied.

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