scholarly journals On the origins of the green luminescence in the “zero-dimensional perovskite” Cs4PbBr6: conclusive results from cathodoluminescence imaging

Nanoscale ◽  
2019 ◽  
Vol 11 (9) ◽  
pp. 3925-3932 ◽  
Author(s):  
Nicolas Riesen ◽  
Mark Lockrey ◽  
Kate Badek ◽  
Hans Riesen

Cathodoluminescence imaging reveals that the bright green emission from the zero-dimensional perovskite Cs4PbBr6 is due to nanoscale CsPbBr3 impurities.

2017 ◽  
Vol 214 (10) ◽  
pp. 1700276 ◽  
Author(s):  
Lei Yu ◽  
Jigong Hao ◽  
Zhijun Xu ◽  
Wei Li ◽  
Ruiqing Chu

2005 ◽  
Vol 871 ◽  
Author(s):  
Toshimitsu Tsuzuki ◽  
Nobuhiko Shirasawa ◽  
Toshiyasu Suzuki ◽  
Shizuo Tokito

AbstractWe report a novel class of emitting materials for use in the organic light-emitting devices (OLEDs): multifunctional phosphorescent dendrimers that have a phosphorescent core and have charge transporting dendrons. We have synthesized first-generation and second-generation dendrimers consisting of a fac-tris(2-phenylpyridine)iridium [Ir(ppy)3] core and hole transporting phenylcarbazole-based dendrons. Smooth amorphous films of these dendrimers were formed by spin-coating them from solutions. The OLEDs using the dendrimer exhibited bright green or yellowish-green emission from the Ir(ppy)3 core. The external quantum efficiency of the OLED using the mixture film of the first-generation dendrimer and an electron-transporting material was as high as 7.6%.


2015 ◽  
Vol 44 (18) ◽  
pp. 8369-8378 ◽  
Author(s):  
Masahisa Osawa ◽  
Mikio Hoshino ◽  
Masashi Hashimoto ◽  
Isao Kawata ◽  
Satoshi Igawa ◽  
...  

Conventional bottom-emitting devices with three-layered structures containing sublimable three-coordinate copper(i) complexes produce bright green luminescence with maximum external quantum efficiencies (EQE) of 18.6–22.5%.


2010 ◽  
Vol 663-665 ◽  
pp. 137-140 ◽  
Author(s):  
Jia Yue Sun ◽  
Wei Hang Zhang ◽  
Yu Jing Lan ◽  
Hai Yan Du

Two-color emission phosphors BaGd2(MoO4)4: Eu3+, Er3+, Yb3+ have been synthesized by the high temperature solid-state method. The as-prepared BaGd2(MoO4)4: Eu3+, Er3+, Yb3+ phosphors can emit intense red light under 395 nm UV excitation, while it will show bright green light upon 980 nm infrared light excitation. It is found that the red emission peaks at 595 and 614 nm should be attributed to 5D0-7F1 and 5D0-7F2 transitions of Eu3+, respectively. The green emission peaks centered at 532 and 553 nm under 980 nm excitation, are attributed to Er3+ transitions from 4H11/2 -4I15/2 and 4S3/2-4I15/2, respectively.


2020 ◽  
Vol 49 (22) ◽  
pp. 7525-7534 ◽  
Author(s):  
Marco Bortoluzzi ◽  
Jesús Castro ◽  
Alberto Gobbo ◽  
Valentina Ferraro ◽  
Luca Pietrobon

Excitation of the coordinated ligands in tetrahedral complexes having the general formula [MnX2L2] (X = Cl, Br, I; L = N,N′,N′-tetramethyl-P-indol-1-ylphosphonic diamide) causes bright green luminescence from the Mn(ii) centre.


RSC Advances ◽  
2016 ◽  
Vol 6 (50) ◽  
pp. 44908-44920 ◽  
Author(s):  
Santosh K. Gupta ◽  
P. S. Ghosh ◽  
C. Reghukumar ◽  
N. Pathak ◽  
R. M. Kadam

Origin of green emission in undoped Gd2Zr2O7 and photophysical characteristics such as local site and energy transfer dynamics of Gd2Zr2O7:Eu3+ is investigated using PL and DFT calculations.


2019 ◽  
Vol 31 (24) ◽  
pp. 10161-10169 ◽  
Author(s):  
Viktoriia Morad ◽  
Ihor Cherniukh ◽  
Lena Pöttschacher ◽  
Yevhen Shynkarenko ◽  
Sergii Yakunin ◽  
...  

2006 ◽  
Vol 916 ◽  
Author(s):  
Alexander N. Cartwright ◽  
M. C-K. Cheung ◽  
F. Shahedipour-Sandvik ◽  
J. R. Grandusky ◽  
M. Jamil ◽  
...  

AbstractTime-resolved photoluminescence studies can provide useful information for the development of InGaN/GaN heterostructures for long wavelength visible emitters. In this paper, we present results of time-resolved photoluminescence from samples grown using two different approaches to achieve green emission from InGaN/GaN MQWs. In one approach, samples, with high indium incorporation, were grown on a high quality AlN substrate to achieve green emission. The resulting photoluminescence decay of the green luminescence is long-lived and non-exponential. Quantitative analysis showed that the decay has a stretched-exponential characteristic, typical of InGaN/GaN MQW with potential fluctuation along the growth plane. This carrier localization, in a structure with low defect density, proves to be an effective means to achieve green emission. In another approach, a piezoelectric Stark-like ladder effect is used. In this case, a methodical layer-by-layer growth homogeneity optimization process was adopted to achieve an optical transition below the electron to heavy-hole (e1hh1) transition when the quantum well is subjected to the strong piezoelectric polarization dipole. This approach has proven to be successful in achieving green luminescence on conventional sapphire substrates. The resulting photoluminescence decay at 14 K, of a sample grown by this approach, is single exponential and shorter in duration than the decay observed in the first approach. This exponential decay is consistent with previous AFM studies that revealed a homogeneous active region.


2013 ◽  
Vol 3 (10) ◽  
pp. 1727 ◽  
Author(s):  
Xiaoqing Xu ◽  
Jing Ren ◽  
Guorong Chen ◽  
Deshuang Kong ◽  
Changjun Gu ◽  
...  
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