Tunable hysteresis behaviour related to trap filling dependence of surface barrier in an individual CH3NH3PbI3 micro/nanowire

Nanoscale ◽  
2019 ◽  
Vol 11 (7) ◽  
pp. 3360-3369 ◽  
Author(s):  
Zhen Hong ◽  
Jie Zhao ◽  
Shujun Li ◽  
Baochang Cheng ◽  
Yanhe Xiao ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Surface Barrier ◽  
Terminal Structure ◽  
Hysteresis Properties ◽  
Trap Filling ◽  
Hysteresis Behaviour

For a single CH3NH3PbI3 micro/nanowire-based two-terminal structure, its hysteresis properties with nonvolatile memory can be accurately modulated by illuminating different sites, and its origin can be clearly identified as the variation of surface barrier related to trap filling.

Data Acquisition and Handling Unit for a Quantitative Use of Electron Energy Loss Spectroscopy

1977 ◽  
Vol 35 ◽  
pp. 232-233 ◽  
Author(s):  
P. Trebbia ◽  
P. Ballongue ◽  
C. Colliex
Keyword(s):  
Electron Microscope ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Single Channel ◽  
Detection System ◽  
Surface Barrier ◽  
Solid State Detector ◽  
Electrostatic Mirror ◽  
Electron Energy Loss

An effective use of electron energy loss spectroscopy for chemical characterization of selected areas in the electron microscope can only be achieved with the development of quantitative measurements capabilities.The experimental assembly, which is sketched in Fig.l, has therefore been carried out. It comprises four main elements.The analytical transmission electron microscope is a conventional microscope fitted with a Castaing and Henry dispersive unit (magnetic prism and electrostatic mirror). Recent modifications include the improvement of the vacuum in the specimen chamber (below 10-6 torr) and the adaptation of a new electrostatic mirror.The detection system, similar to the one described by Hermann et al (1), is located in a separate chamber below the fluorescent screen which visualizes the energy loss spectrum. Variable apertures select the electrons, which have lost an energy AE within an energy window smaller than 1 eV, in front of a surface barrier solid state detector RTC BPY 52 100 S.Q. The saw tooth signal delivered by a charge sensitive preamplifier (decay time of 5.10-5 S) is amplified, shaped into a gaussian profile through an active filter and counted by a single channel analyser.

Digital differential hysteresis iimage processing displays what the microscope acquires but the eye can't see

1995 ◽  
Vol 53 ◽  
pp. 642-643
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
Image Processing ◽  
Visual System ◽  
High Precision ◽  
Image Data ◽  
Processing Technology ◽  
Output Data ◽  
Contrast Resolution ◽  
Pixel Intensity ◽  
Data Reading ◽  
Hysteresis Properties

Differential hysteresis processing is a new image processing technology that provides a tool for the display of image data information at any level of differential contrast resolution. This includes the maximum contrast resolution of the acquisition system which may be 1,000-times higher than that of the visual system (16 bit versus 6 bit). All microscopes acquire high precision contrasts at a level of <0.01-25% of the acquisition range in 16-bit - 8-bit data, but these contrasts are mostly invisible or only partially visible even in conventionally enhanced images. The processing principle of the differential hysteresis tool is based on hysteresis properties of intensity variations within an image.Differential hysteresis image processing moves a cursor of selected intensity range (hysteresis range) along lines through the image data reading each successive pixel intensity. The midpoint of the cursor provides the output data. If the intensity value of the following pixel falls outside of the actual cursor endpoint values, then the cursor follows the data either with its top or with its bottom, but if the pixels' intensity value falls within the cursor range, then the cursor maintains its intensity value.

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Nonvolatile Memory ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Interface Layer ◽  
Si Substrate ◽  
Hfo2 Film ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Nonvolatile Memory Devices

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory

2013 ◽  
Vol E96.C (5) ◽  
pp. 714-717
Author(s):  
Woo Young CHOI ◽  
Min Su HAN ◽  
Boram HAN ◽  
Dongsun SEO ◽  
Il Hwan CHO
Keyword(s):  
Nonvolatile Memory ◽  
Sacrificial Layer

Branching Ratios and Lifetimes of 25Mg Levels below 5.2 MeV

1974 ◽  
Vol 52 (23) ◽  
pp. 2329-2342 ◽  
Author(s):  
R. W. Ollerhead ◽  
D. C. Kean ◽  
R. M. Gorman ◽  
M. B. Thomson
Keyword(s):  
Doppler Shift ◽  
Gamma Ray ◽  
Branching Ratios ◽  
Surface Barrier ◽  
Surface Barrier Detector ◽  
Rotational Model ◽  
Rotational Bands ◽  
Barrier Detector ◽  
Combined Data

All levels below 5.2 MeV in 25Mg have been studied using the reaction 25Mg(p, p′γ). In-elastically scattered protons were detected in an annular surface barrier detector located at 180°; coincidence gamma-ray spectra were obtained at Ge (Li) detector angles of 90°, 45°, and 135°. Level energies were determined from unshifted gamma-ray energies recorded in the 90° spectra. Lifetimes were obtained from the attenuated Doppler shift of gamma-ray energies recorded in spectra taken at forward and backward angles. Branching ratios were deduced from the combined data of all three angles. The identification of levels as members of rotational bands is discussed, and transition strengths deduced from the present measurements are compared with predictions of the simple rotational model.

scholarly journals Memory Devices: Solution‐Processed Stretchable Ag 2 S Semiconductor Thin Films for Wearable Self‐Powered Nonvolatile Memory (Adv. Mater. 23/2021)

2021 ◽  
Vol 33 (23) ◽  
pp. 2170181
Author(s):  
Seungki Jo ◽  
Soyoung Cho ◽  
U Jeong Yang ◽  
Gyeong‐Seok Hwang ◽  
Seongheon Baek ◽  
...  
Keyword(s):  
Thin Films ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Solution Processed ◽  
Semiconductor Thin Films ◽  
Self Powered
Sign in / Sign up

Export Citation Format

Share Document