Direct conversion of carbon nanofibers and nanotubes into diamond nanofibers and the subsequent growth of large-sized diamonds

Nanoscale ◽  
2019 ◽  
Vol 11 (5) ◽  
pp. 2238-2248 ◽  
Author(s):  
J. Narayan ◽  
A. Bhaumik ◽  
R. Sachan ◽  
A. Haque ◽  
S. Gupta ◽  
...  
Keyword(s):  
Carbon Nanofibers ◽  
Carbon Fibers ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Direct Conversion ◽  
Ambient Conditions ◽  
Subsequent Growth ◽  
Pulsed Laser Annealing ◽  
Annealing Method

We report a pulsed laser annealing method to convert carbon fibers and nanotubes into diamond fibers under ambient conditions.

Direct conversion of carbon nanofibers into diamond nanofibers using nanosecond pulsed laser annealing

2019 ◽  
Vol 21 (13) ◽  
pp. 7208-7219 ◽  
Author(s):  
Anagh Bhaumik ◽  
Jagdish Narayan
Keyword(s):  
Low Temperature ◽  
Carbon Nanofibers ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Direct Conversion ◽  
Photonic Devices ◽  
Pulsed Laser Annealing ◽  
Nanosecond Pulsed Laser

The formation of DNFs utilizing a low-temperature budget route will revolutionize their use in electronic, biomedical, and photonic devices.

Impurity Activation in N+ Ion-Implanted 6H-SiC with Pulsed Laser Annealing Method

2000 ◽  
Vol 640 ◽  
Author(s):  
O. Eryu ◽  
K. Aoyama ◽  
K. Abe ◽  
K. Nakashima
Keyword(s):  
Contact Resistance ◽  
Laser Irradiation ◽  
Carrier Density ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Surface Region ◽  
Near Surface ◽  
Pulsed Laser Annealing ◽  
Annealing Method ◽  
Ion Implanted

ABSTRACTWe have succeeded in pulsed laser annealing of N+ ion-implanted n-type 6H-SiC for increasing the carrier density near surface in order to decrease contact resistance, which induces little redistribution of implanted impurities after laser irradiation. By repeated laser irradiation at low energy density, the ion–implanted impurities were electrically activated without melting the surface region. SiC substrates with impurity concentration of 2×1018 /cm3 were implanted with 30 keV N+ ions with dose of 4.7×1013/cm2. After pulsed laser annealing, a contact resistance was measured to be 5.7×10−5 Ωcm2 using Al electrode on the N+ -implanted layer.

Pulsed laser annealing of zinc implanted GaAs

1978 ◽  
Vol 14 (4) ◽  
pp. 85 ◽  
Author(s):  
S.S. Kular ◽  
B.J. Sealy ◽  
K.G. Stephens ◽  
D.R. Chick ◽  
Q.V. Davis ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Crystallized by Pulsed Laser Annealing

2021 ◽  
Author(s):  
Natalia Volodina ◽  
Anna Dmitriyeva ◽  
Anastasia Chouprik ◽  
Elena Gatskevich ◽  
Andrei Zenkevich
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

scholarly journals Devitrification of thin film Cu-Zr metallic glass via ultrashort pulsed laser annealing

2021 ◽  
pp. 161437
Author(s):  
J. Antonowicz ◽  
P. Zalden ◽  
K. Sokolowski-Tinten ◽  
K. Georgarakis ◽  
R. Minikayev ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ultrashort Pulsed Laser

Dynamic behaviors of pulsed-laser annealing in ion-implanted silicon studied by measuring the optical reflectance

1979 ◽  
Author(s):  
Kouichi Murakami ◽  
Kenji Gamo ◽  
Susumu Namba ◽  
Mitsuo Kawabe ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Optical Reflectance ◽  
Dynamic Behaviors ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Extended defect structure induced by pulsed laser annealing in Ge implanted Si crystal

2001 ◽  
Vol 328 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
D. Klinger ◽  
M. Lefeld-Sosnowska ◽  
J. Auleytner ◽  
D. Żymierska ◽  
L. Nowicki ◽  
...  
Keyword(s):  
Defect Structure ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Extended Defect ◽  
Pulsed Laser Annealing

Superconducting V3Si produced by pulsed laser annealing

1982 ◽  
Vol 41 (4) ◽  
pp. 321-324 ◽  
Author(s):  
B. Stritzker ◽  
B.R. Appleton ◽  
C.W. White ◽  
S.S. Lau
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Pulsed Laser Annealing of R.F.Sputtered Amorphous Si : H.Films, Doped with Arsenic

1981 ◽  
Vol 4 ◽  
Author(s):  
E. Fogarassy ◽  
R. Stuck ◽  
M. Toulemonde ◽  
P. Siffert ◽  
J.F. Morhange ◽  
...  
Keyword(s):  
Ruby Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Amorphous Layer ◽  
High Concentration ◽  
Topographic Analysis ◽  
Pulsed Laser Annealing ◽  
Residual Hydrogen ◽  
Silicon Target ◽  
Amorphous Si

Arsenic doped amorphous silicon layers have been deposited on silicon single crystals by R.F.cathodic sputtering of a silicon target in a reactive argon-hydrogen mixture, and annealed with a Q-switched Ruby laser. Topographic analysis of the irradiated layers has shown the formation of a crater, due to an evaporation effect of material which could be related to the presence of a high concentration of Ar in the amorphous layer. RBS and Raman Spectroscopy showed that the remaining layer is not recrystallised probably due to inhibition by the residual hydrogen. However, it was found that arsenic diffuses into the monocrystalline substrate by laser induced diffusion of dopant from the surface solid source, leading to the formation of good quality P-N junctions.

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