Crystallographic plane and topography-dependent growth of semipolar InGaN nanorods on patterned sapphire substrates by molecular beam epitaxy

Nanoscale ◽  
2018 ◽  
Vol 10 (46) ◽  
pp. 21951-21959 ◽  
Author(s):  
Jian Shen ◽  
Yulin Zheng ◽  
Zhenzhu Xu ◽  
Yuefeng Yu ◽  
Fangliang Gao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
High Index ◽  
Crystallographic Plane ◽  
Patterned Sapphire Substrate ◽  
Sapphire Substrates ◽  
Dependent Growth ◽  
Crystallographic Planes ◽  
Patterned Sapphire Substrates

A patterned sapphire substrate with exposed high-index crystallographic planes, with well-organized step-terrace structures, facilitates the growth of well-aligned semipolar InGaN nanorods.

scholarly journals Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Ex Situ ◽  
Initial Growth ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.

Study on the morphology and shape control of volcano-shaped patterned sapphire substrates fabricated by imprinting and wet etching

CrystEngComm ◽  
2015 ◽  
Vol 17 (16) ◽  
pp. 3070-3075 ◽  
Author(s):  
S. X. Jiang ◽  
Z. Z. Chen ◽  
X. Z. Jiang ◽  
X. X. Fu ◽  
S. Jiang ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Shape Control ◽  
Wet Etching ◽  
Patterned Sapphire Substrate ◽  
Sapphire Substrates ◽  
Novel Method ◽  
Patterned Sapphire Substrates

A novel method based on imprinting lithography and wet etching to fabricate a volcano-shaped patterned sapphire substrate (VPSS) is presented.

Enhanced wavelength-selective photoresponsivity with a MoS2 bilayer grown conformally on a patterned sapphire substrate

2019 ◽  
Vol 7 (6) ◽  
pp. 1622-1629 ◽  
Author(s):  
Sung-Wen Huang Chen ◽  
Sheng-Wen Wang ◽  
Kuo-Bin Hong ◽  
Henry Medin ◽  
Chieh-Han Chung ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Simple Method ◽  
Patterned Sapphire Substrate ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Wavelength-selective photodetectors with a MoS2 bilayer on patterned sapphire substrates have been demonstrated using a facile and simple method.

Crystallographic and topographical evolutions of a cylinder patterned sapphire substrate etched with a sulfuric acid and phosphoric acid mixture: an SEM and AFM study

CrystEngComm ◽  
2017 ◽  
Vol 19 (42) ◽  
pp. 6383-6390 ◽  
Author(s):  
Jian Shen ◽  
Dan Zhang ◽  
You Wang ◽  
Yang Gan
Keyword(s):  
Sulfuric Acid ◽  
Phosphoric Acid ◽  
Sapphire Substrate ◽  
Model System ◽  
Acid Mixture ◽  
Full Spectrum ◽  
Patterned Sapphire Substrate ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Using cylinders as a model system, the full spectrum of crystallographic and topographical evolutions of patterned sapphire substrates is exhibited.

scholarly journals Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes

RSC Advances ◽  
2020 ◽  
Vol 10 (28) ◽  
pp. 16284-16290 ◽  
Author(s):  
Szu-Han Chao ◽  
Li-Hsien Yeh ◽  
Rudder T. Wu ◽  
Kyoko Kawagishi ◽  
Shih-Chieh Hsu
Keyword(s):  
Silicon Nitride ◽  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Air Voids ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

A novel patterned sapphire substrate composed of a silicon nitride barrier and air voids was developed for enhancing the efficiency of GaN-based light-emitting diodes.

scholarly journals Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes

2016 ◽  
Vol 2016 ◽  
pp. 1-8
Author(s):  
Hsu-Hung Hsueh ◽  
Sin-Liang Ou ◽  
Yu-Che Peng ◽  
Chiao-Yang Cheng ◽  
Dong-Sing Wuu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
X Ray Diffraction ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

The flat-top pyramid patterned sapphire substrates (FTP-PSSs) have been prepared for the growth of GaN epilayers and the fabrication of lateral-type light-emitting diodes (LEDs) with an emission wavelength of approximately 470 nm. Three kinds of FTP-PSSs, which were denoted as FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C, respectively, were formed through the sequential wet etching processes. The diameters of circle areas on the top regions of these three FTP-PSSs were 1, 2, and 3 μm, respectively. Based on the X-ray diffraction results, the full-width at half-maximum values of rocking curves at (002) plane for the GaN epilayers grown on conventional sapphire substrate (CSS), FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 412, 238, 346, and 357 arcsec, while these values at (102) plane were 593, 327, 352, and 372 arcsec, respectively. The SpeCLED-Ratro simulation results reveal that the LED prepared on FTP-PSS-A has the highest light extraction efficiency than that of the other devices. At an injection current of 350 mA, the output powers of LEDs fabricated on CSS, FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 157, 254, 241, and 233 mW, respectively. The results indicate that both the crystal quality of GaN epilayer and the light extraction of LED can be improved via the use of FTP-PSS, especially for the FTP-PSS-A.

Insight into the Ga/In flux ratio and crystallographic plane dependence of MBE self-assembled growth of InGaN nanorods on patterned sapphire substrates

Nanoscale ◽  
2020 ◽  
Vol 12 (6) ◽  
pp. 4018-4029 ◽  
Author(s):  
Jian Shen ◽  
Yuefeng Yu ◽  
Jia Wang ◽  
Yulin Zheng ◽  
Yang Gan ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Flux Ratio ◽  
High Index ◽  
Crystallographic Plane ◽  
Sapphire Substrates ◽  
Self Assembled ◽  
Insight Into ◽  
Patterned Sapphire Substrates

A lower Ga/In flux ratio and a high index sapphire plane favor MBE self-assembled growth of dense, uniform, and high-aspect-ratio InGaN nanorods.

Fabrication of nano-patterned sapphire substrates by combining nanoimprint lithography with edge effects

CrystEngComm ◽  
2019 ◽  
Vol 21 (11) ◽  
pp. 1794-1800 ◽  
Author(s):  
Yiyong Chen ◽  
Zhizhong Chen ◽  
Shengxiang Jiang ◽  
Chengcheng Li ◽  
Yifan Chen ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Edge Effects ◽  
Nanoimprint Lithography ◽  
Patterned Sapphire Substrate ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

A volcano-shaped nano-patterned sapphire substrate fabricated by combining nanoimprint lithography with edge effects.

Realization of low dislocation density AlN on a small-coalescence-area nano-patterned sapphire substrate

CrystEngComm ◽  
2019 ◽  
Vol 21 (15) ◽  
pp. 2490-2494 ◽  
Author(s):  
F. J. Xu ◽  
L. S. Zhang ◽  
N. Xie ◽  
M. X. Wang ◽  
Y. H. Sun ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Sapphire Substrate ◽  
Patterned Sapphire Substrate ◽  
Sapphire Substrates ◽  
Truncated Cone ◽  
Low Dislocation Density ◽  
Patterned Sapphire Substrates

Growth behaviors of AlN on hexagonal configuration hole-type and truncated-cone-pillar-type nano-patterned sapphire substrates (NPSSs) have been investigated.

Sign in / Sign up

Export Citation Format

Share Document