Raman intensity enhancement of molecules adsorbed onto HfS2 flakes up to 200 layers

Nanoscale ◽  
2019 ◽  
Vol 11 (5) ◽  
pp. 2179-2185 ◽  
Author(s):  
Xiao Fei Yue ◽  
Yao Liang ◽  
Jie Jiang ◽  
Rong Gang Liu ◽  
Shou Tian Ren ◽  
...  
Keyword(s):  
Raman Spectra ◽  
Interference Effect ◽  
Raman Intensity ◽  
Optical Interference ◽  
Intensity Enhancement

An optical interference effect successfully describes Raman spectra of HfS2 and Raman spectra of molecules adsorbed on HfS2.

The infrared, Raman, and resonance Raman spectra and normal coordinate analysis of methyl and ethyl dithioacetate

1982 ◽  
Vol 60 (2) ◽  
pp. 174-189 ◽  
Author(s):  
J. J. C. Teixeira-Dias ◽  
V. M. Jardim-Barreto ◽  
Y. Ozaki ◽  
A. C. Storer ◽  
P. R. Carey
Keyword(s):  
Raman Spectra ◽  
Vibrational Spectra ◽  
Resonance Raman ◽  
Normal Coordinate Analysis ◽  
Raman Intensity ◽  
Normal Coordinate ◽  
Intensity Enhancement ◽  
Strong Intensity ◽  
Resonance Raman Spectra ◽  
Absorbance Peak

Infrared, Raman, and resonance Raman data are reported for ethyl and methyl dithioacetate together with data for their isotopically substituted analogs: CD3C(=S)SCH3, CH3C(=S)SCD3, 13CH3C(=S)SCH3, CH313C(=S)SCH3, CD3C(=S)SCH2CH3, CH3C(=S)SCD2CH3, and CH313C(=S)SCH2CH3. Based on these data and a normal coordinate analysis of methyl dithioacetate, assignments are proposed for the majority of bands appearing in the vibrational spectra. Using excitation wavelengths in the 324–356 nm region strong intensity enhancement is observed for Raman bands near 1195, 1100, 730, and 580 cm−1 which are assigned to stretching motions of the CCSSC skeleton. Raman excitation profiles are reported for the 1197 and 581 cm−1 bands of ethyl dithioacetate and the electronic absorbance peak near 305 nm is identified as the source of resonance Raman intensity enhancement.

Preresonance Raman spectra and excitation profiles of some chemically and isotopically substituted trans-4-benzylideneoxazolin-5-ones

1978 ◽  
Vol 56 (2) ◽  
pp. 240-245 ◽  
Author(s):  
D. J. Phelps ◽  
R. G. Carriere ◽  
K. Kumar ◽  
P. R. Carey
Keyword(s):  
Raman Spectrum ◽  
Absorption Band ◽  
Raman Spectra ◽  
Phenyl Group ◽  
Low Energy ◽  
Coupling Scheme ◽  
Raman Intensity ◽  
Vibrational Coupling ◽  
Intensity Enhancement ◽  
Phenyl Rings

Resonance and preresonance Raman spectra of nine substituted trans-4-benzylidene- Δ2-oxazolin-5-ones are reported. The seven analogs with phenyl in the 2 position of the oxazolinone ring have either an electron donating or attracting group on one of the phenyl rings. Although shifts in λmax of up to 100 nm are observed the Raman spectra are very similar to that of the unsubstituted trans isomer. However, in the substituted compounds modes from the benzylidene portion may become weakly intensity enhanced. Replacing the 2-phenyl group by 2-methyl in the oxazolinone ring results in quite gross changes in the Raman spectrum. Substitution by 15N in the ring of a 2-methyloxazolinone reveals that a change in the vibrational coupling scheme occurs. Excitation profiles for the 2-phenyl and the 2-methyl analogs of 4-(p-nitrobenzylidene)oxazolinone indicate that in each compound ail intensity enhanced modes are coupled to the intense low energy absorption band near 350 nm and the intensity enhancement fits the FB2 terms of Albrecht and Hutley. However, differences in the relative intensity of the benzylidene nitro feature in the 2-methyl and 2-phenyl analogs, taken with the excitation profiles, suggest that in the 2-methyl compound the electronic transition responsible for Raman intensity enhancement is no longer primarily located in the C=C—N=C—Ph moiety.

Method of determining the exciton diffusion length using optical interference effect in Schottky diode

2009 ◽  
Vol 94 (22) ◽  
pp. 223303 ◽  
Author(s):  
Suman Banerjee ◽  
Anukul Prasad Parhi ◽  
S. Sundar Kumar Iyer ◽  
Satyendra Kumar
Keyword(s):  
Schottky Diode ◽  
Interference Effect ◽  
Diffusion Length ◽  
Optical Interference ◽  
Exciton Diffusion ◽  
Exciton Diffusion Length

Raman intensity enhancement of the Si peak by CdS thin films

1991 ◽  
Vol 59 (25) ◽  
pp. 3273-3275 ◽  
Author(s):  
C. M. Dai ◽  
D. S. Chuu ◽  
W. F. Hsieh
Keyword(s):  
Thin Films ◽  
Raman Intensity ◽  
Intensity Enhancement ◽  
Cds Thin Films

scholarly journals Enhanced Raman Spectra in Femtosecond Laser Inscribed Yb:YVO4 Channel Waveguides

2021 ◽  
Vol 9 ◽  
Author(s):  
Yi-Fei Bao ◽  
Tao Liu ◽  
Wei-Jin Kong ◽  
Hao-Qi Luo ◽  
Yong Liu ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Raman Spectra ◽  
Raman Intensity ◽  
Laser Writing ◽  
Double Line ◽  
Buried Channel ◽  
Crystal Model ◽  
Channel Waveguides

The femtosecond laser writing with double-line technique was employed to fabricate buried channel waveguides with different widths in Yb:YVO4 crystal. Model profiles of the waveguides were captured using the endface coupling setup at the wavelength of 633 nm under TE and TM polarization. Furthermore, the confocal micro-Raman spectra in bulk and waveguide areas were studied at the wavelength of 633 nm. The enhanced Raman intensity were performed in waveguide areas.

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