Serial hole transfer layers for a BiVO4 photoanode with enhanced photoelectrochemical water splitting

Nanoscale ◽  
2018 ◽  
Vol 10 (38) ◽  
pp. 18378-18386 ◽  
Author(s):  
Linsen Li ◽  
Jinhua Li ◽  
Jing Bai ◽  
Qingyi Zeng ◽  
Ligang Xia ◽  
...  

The performance of BiVO4 was highly enhanced by serial hole transfer layers of Fe2O3 and NiOOH/FeOOH.

2017 ◽  
Vol 1 (8) ◽  
pp. 1830-1846 ◽  
Author(s):  
Martin Rohloff ◽  
Björn Anke ◽  
Siyuan Zhang ◽  
Ulrich Gernert ◽  
Christina Scheu ◽  
...  

Facile sol–gel synthesis of Mo:BiVO4 thin films with optimized morphology results in reduced surface recombination and enhanced hole transfer efficiency.


Small ◽  
2017 ◽  
Vol 13 (39) ◽  
pp. 1702007 ◽  
Author(s):  
Yijia Wei ◽  
Xiaoxia Chang ◽  
Tuo Wang ◽  
Chengcheng Li ◽  
Jinlong Gong

2018 ◽  
Vol 6 (31) ◽  
pp. 15265-15273 ◽  
Author(s):  
Ela Nurlaela ◽  
Yutaka Sasaki ◽  
Mamiko Nakabayashi ◽  
Naoya Shibata ◽  
Taro Yamada ◽  
...  

A remarkable onset potential shift has been demonstrated on Ta3N5 modified with a Mg:GaN layer. The Mg-doped GaN band positions facilitate more efficient electron/hole transfer to/from Ta3N5, inducing a negative onset potential shift to 0 vs. RHE.


2020 ◽  
Vol 49 (3) ◽  
pp. 588-592 ◽  
Author(s):  
Fusheng Li ◽  
Ziqi Zhao ◽  
Hao Yang ◽  
Dinghua Zhou ◽  
Yilong Zhao ◽  
...  

A cobalt oxide catalyst prepared by a flame-assisted deposition method on the surface of FTO and hematite for electrochemical and photoelectrochemical water oxidation, respectively.


2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>


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