Kinetic pathways towards mass production of single crystalline stanene on topological insulator substrates

Nanoscale ◽  
2018 ◽  
Vol 10 (40) ◽  
pp. 18988-18994 ◽  
Author(s):  
Liying Zhang ◽  
Wei Qin ◽  
Leiqiang Li ◽  
Shunfang Li ◽  
Ping Cui ◽  
...  
Keyword(s):  
Topological Insulator ◽  
First Principles ◽  
Mass Production ◽  
Growth Mechanisms ◽  
Single Crystalline ◽  
Crystalline Growth

Contrasting atomistic growth mechanisms of stanene on Bi2Te3-based substrates are predicted within first-principles theory, favoring single-crystalline growth on Bi-covered Bi2Te3.

First-principles prediction of inversion-asymmetric topological insulator in hexagonal BiPbH monolayer

2016 ◽  
Vol 4 (37) ◽  
pp. 8750-8757 ◽  
Author(s):  
Yi-zhen Jia ◽  
Wei-xiao Ji ◽  
Chang-wen Zhang ◽  
Ping Li ◽  
Miao-juan Ren ◽  
...  
Keyword(s):  
Topological Insulator ◽  
First Principles ◽  
Condensed Matter ◽  
Spin Splitting ◽  
Condensed Matter Physics ◽  
Rashba Spin ◽  
Rashba Spin Splitting

Band topology and Rashba spin splitting (RSS) are two extensively explored yet exotic properties in condensed matter physics.

Growth of GaN:Sb MBE-Layers

2001 ◽  
Vol 693 ◽  
Author(s):  
P. Cristea ◽  
D.G. Ebling ◽  
K.W. Benz
Keyword(s):  
Composition Range ◽  
Miscibility Gap ◽  
Side Reactions ◽  
Equilibrium Conditions ◽  
Mbe Growth ◽  
Single Crystalline ◽  
N Source ◽  
Atomic Radii ◽  
Crystalline Growth

AbstractThe single crystalline growth of the GaNxSb1-x system is difficult due to the miscibility gap expected for nearly the whole composition range under thermodynamic equilibrium conditions. The gap is determined by the differences of the atomic radii and of the electro negativities for N and Sb. To overcome this problem crystal growth has to be performed under non-equilibrium conditions with kinetically controlled growth, as it is observed for molecular beam epitaxy (MBE) growth. A single crystalline MBE-growth within the miscibility gap has been demonstrated already in the GaAsxN1-x system exhibiting a similar large miscibility gap. GaN:Sb-layers were grown on Si(111)-substrates by MBE using NH3 as a N-source and solid element sources for Ga and Sb. The parameter window for growth was limited due to side reactions like the decomposition of NH3, the desorption of (at high temperature volatile) compounds like Sb and GaSb or the reaction of Sb with NH3. The composition of the layers was analyzed by XRD and RBS. Antimony bulk concentrations of up to 1.6 % could be obtained in GaN. Optical characterization of the samples was performed by CL-measurements and indicate Sb-induced transitions in the 2.2 eV and 1.42 eV range.

scholarly journals Towards Repeatable, Scalable Graphene Integrated Micro-Nano Electromechanical Systems (MEMS/NEMS)

Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 27
Author(s):  
Joon Hyong Cho ◽  
David Cayll ◽  
Dipankar Behera ◽  
Michael Cullinan
Keyword(s):  
Mass Production ◽  
Large Scale ◽  
Basic Research ◽  
Growth Mechanisms ◽  
Electromechanical Systems ◽  
Major Barrier ◽  
The Past ◽  
Integrated Devices ◽  
Graphene Devices ◽  
High Repeatability

The demand for graphene-based devices is rapidly growing but there are significant challenges for developing scalable and repeatable processes for the manufacturing of graphene devices. Basic research on understanding and controlling growth mechanisms have recently enabled various mass production approaches over the past decade. However, the integration of graphene with Micro-Nano Electromechanical Systems (MEMS/NEMS) has been especially challenging due to performance sensitivities of these systems to the production process. Therefore, ability to produce graphene-based devices on a large scale with high repeatability is still a major barrier to the commercialization of graphene. In this review article, we discuss the merits of integrating graphene into Micro-Nano Electromechanical Systems, current approaches for the mass production of graphene integrated devices, and propose solutions to overcome current manufacturing limits for the scalable and repeatable production of integrated graphene-based devices.

Mass production compatible fabrication techniques of single-crystalline silver metamaterials and plasmonics devices

2017 ◽  
Author(s):  
Ilya A. Rodionov ◽  
Alexander S. Baburin ◽  
Ilya A. Rizhikov ◽  
Igor V. Trofimov ◽  
Ivan A. Philippov ◽  
...  
Keyword(s):  
Mass Production ◽  
Single Crystalline

Thermoelectric properties of topological insulator lanthanum phosphide via first-principles study

2019 ◽  
Vol 125 (4) ◽  
pp. 045107 ◽  
Author(s):  
Yu Zhou ◽  
Wang-Li Tao ◽  
Zhao-Yi Zeng ◽  
Xiang-Rong Chen ◽  
Qi-Feng Chen
Keyword(s):  
Thermoelectric Properties ◽  
Topological Insulator ◽  
First Principles ◽  
First Principles Study

scholarly journals Molecule-Adsorbed Topological Insulator and Metal Surfaces: A Comparative First-Principles Study

2018 ◽  
Vol 30 (6) ◽  
pp. 1849-1855 ◽  
Author(s):  
Soumyajit Sarkar ◽  
Jing Yang ◽  
Liang Z. Tan ◽  
Andrew M. Rappe ◽  
Leeor Kronik
Keyword(s):  
Topological Insulator ◽  
First Principles ◽  
Metal Surfaces ◽  
First Principles Study

First-Principles Study of Faceted Single-Crystalline Silicon Carbide Nanowires and Nanotubes

2008 ◽  
Vol 113 (3) ◽  
pp. 856-861 ◽  
Author(s):  
Zhenhai Wang ◽  
Mingwen Zhao ◽  
Tao He ◽  
Xuejuan Zhang ◽  
Zexiao Xi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
First Principles ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
First Principles Study

scholarly journals Manifestation of axion electrodynamics through magnetic ordering on edges of a topological insulator

2015 ◽  
Vol 112 (37) ◽  
pp. 11514-11518 ◽  
Author(s):  
Yea-Lee Lee ◽  
Hee Chul Park ◽  
Jisoon Ihm ◽  
Young-Woo Son
Keyword(s):  
Electric Field ◽  
Topological Insulator ◽  
Time Reversal ◽  
First Principles ◽  
Surface States ◽  
Magnetic Ordering ◽  
Crystal Face ◽  
Magnetic Dipoles ◽  
Topological Surface ◽  
The Difference

Because topological surface states of a single-crystal topological insulator can exist on all surfaces with different crystal orientations enclosing the crystal, mutual interactions among those states contiguous to each other through edges can lead to unique phenomena inconceivable in normal insulators. Here we show, based on a first-principles approach, that the difference in the work function between adjacent surfaces with different crystal-face orientations generates a built-in electric field around facet edges of a prototypical topological insulator such as Bi2Se3. Owing to the topological magnetoelectric coupling for a given broken time-reversal symmetry in the crystal, the electric field, in turn, forces effective magnetic dipoles to accumulate along the edges, realizing the facet-edge magnetic ordering. We demonstrate that the predicted magnetic ordering is in fact a manifestation of the axion electrodynamics in real solids.

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